Impregnation of silk sericin into polyester fibers using supercritical carbon dioxide

Silk sericin was impregnated into polyester fabric using supercritical carbon dioxide (SCCO₂) to overcome polyester hydrophobicity. The effects of sericin molecular weight, pH of sericin, solution and cosolvent types on sericin impregnation were investigated. Enzyme‐hydrolyzed, acid‐, based‐hydrolyzed sericin in SCCO₂, and a 30 kDa sericin in SCCO₂ modified with cosolvents such as water, methanol, 1‐propanol, and acetone; and a modifier: sodium hydroxide solution were used in this work. Impregnation of sericin in polyester was indicated by Fourier transform infrared spectrophotometry (FTIR) and dyeing with acid dye. Degradation of polyester fibers during SCCO₂ process was indicated by scanning electron microscopy (SEM). Methylene blue dyeing was used to realize carboxyl group in polyester. The results showed no impregnation of sericin into polyester by using SCCO₂ modified with cosolvents. However, sericin was impregnated into modified surface polyester since hydrophilic groups such as carboxyl and hydroxyl groups were regenerated by alkaline hydrolysis. Samples impregnated with hydrolyzed sericin showed high color strength of Supranolechtbordeaux B acid dye. © 2007 Wiley Periodicals, Inc. J Appl Polym Sci, 2007     

Polymerization of ethylene and propylene initiated by milled alumina powder

Generation of free radicals (mechano-radicals) by the milling of alumina powder at 77 K was demonstrated by ESR. After milling of alumina in the presence of ethylene (simultaneous milling) at 77 K, polyethylene-propagating radicals instead of the alumina mechano-radicals were detected by ESR. Also the contact of ethylene with the milled alumina converted alumina mechano-radicals into polyethylene propagating radicals at a temperature above the melting point of ethylene. The products extracted by hot toluene from the simultaneous milling were identified by IR to be polyethylene, and their molecular weights were roughly 10,000. The residues after the extraction were bonded with the alumina. Polypropylene was also produced by a similar method of milling of alumina in the presence of propylene. The obtained polyproylene was atactic, and its molecular weight was about 400.     

A case of free jejunal graft for anastomotic recurrence after subtotal esophagectomy

A case of anastomotic recurrence after a radical operation for thoracic esophageal carcinoma is presented. A 68-year-old male was treated by subtotal esophagectomy and esophagogastrostomy through retrosternal route. One year after the operation he experienced dysphagia and anastomotic recurrence was detected by an upper gastrointestinal series and fiberscopy. He was admitted to our hospital for radiation therapy. The response was poor and dysphagia wasn't disappeared after radiation therapy at a dose of 10,200 rad. He was consulted to our surgical department for operative therapy. Cervical esophagectomy, partial resection of gastric tube and free jejunal transplantation for the reconstruction were performed. He had been eating anything of food after the operation.     

N2O decomposition over (Mg6−xAx) MnO8 (A = Li, Al)

Two different murdochite-type mixed oxides, (Mg_6–x Li _x )MnO₈ (x = 0, 0.1, 0.2 and 0.3) and (Mg_6–x Al _x )MnO₈ (x = 0, 0.2, 0.4, 0.6) were examined for the catalytic decomposition of N₂O in order to make clear the effects of mixed valencies of pairing manganese ions and oxygen vacancies. The valence of manganese ions and the amount of surface oxygen vacancies have been examined with X-ray photoelectron spectroscopy (XPS). (Mg_6–x Li _x )MnO₈ had mixed valence manganese ions and oxygen vacancies on the surface after the substitution. The substituted (Mg_6–x Al _x )MnO₈ had a mixed valence state but oxygen vacancies decresed with x and excess oxygen over stoichiometry was observed at x = 0.4 and 0.6. The reaction rate of N₂O decomposition increased after substitution with lithium but hardly increased after the substitution with aluminum in (Mg_6–x A _x )MnO₈. We assumed that the presence of oxygen vacancies on the surface along with pairing altervalent manganese ions affected strongly to enhance the reactivity of N₂O decomposition.     

A 3D biodegradable protein based matrix for cartilage tissue engineering and stem cell differentiation to cartilage

A protein based 3D porous scaffold is fabricated by blending gelatin and albumin. The biomimetic biodegradable gelatin, promoted good cell adhesion and its hydrophilic nature enabled absorption of culture media. Albumin is proposed to serve as a nontoxic foaming agent and also helped to attain a hydrophobic-hydrophilic balance. The hydrophobic-hydrophilic balance and appropriate crosslinking of the scaffold avoided extensive swelling, as well as retained the stability of scaffold in culture medium for long period. The scaffold is found to be highly porous with open interconnected pores. The adequate swelling and mechanical property of the scaffold helped to withstand the loads imparted by the cells during in vitro culture. The scaffold served as a nontoxic material to monolayer of fibroblast cells and is found to be cell compatible. The suitability of scaffold for chondrocyte culture and stem cell differentiation to chondrocytes is further explored in this work. The scaffold provided appropriate environment for chondrocyte culture, resulting in deposition of cartilage specific matrix molecules that completely masked the pores of the porous scaffold. The scaffold promoted the proliferation and differentiation of mesenchymal stem cells to chondrocytes in presence of growth factors. The transforming growth factor, TGFbeta3 promoted better chondrogenic differentiation than its isoform TGFbeta1 in this scaffold.     

Growth of silicon carbide thin films by hot-wire chemical vapor deposition from SiH4/CH4/H2

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH₄/CH₄/H₂ and their structural properties were investigated by X-ray diffraction, Fourier transform infrared absorption and Raman scattering spectroscopies. At 2 Torr, Si-crystallite-embedded amorphous SiC (a-Si_1 − xC_x:H) grew at filament temperatures (T_f) below 1600 °C and nanocrystalline cubic SiC (nc-3C-SiC:H) grew above T_f = 1700 °C. On the other hand, At 4 Torr, a-Si_1 − xC_x:H grew at T_f = 1400 °C and nc-3C-SiC grew above T_f = 1600 °C. When the intakes of Si and C atoms into the film per unit time are almost the same and H radicals with a high density are generated, which takes place at high T_f, nc-3C-SiC grows. On the other hand, at low T_f the intake of Si atoms is larger than that of C atoms and, consequently, Si-rich a-Si_1 − xC_x:H or Si-crystallite-embedded a-Si_1 − xC_x:H grow.     

Adsorption properties of oxygen and methane on Ga-ZSM-5; the origin of the selectivity of NOx reduction using methane

The adsorption properties of oxygen and methane on Ga-ZSM-5 and Cu-ZSM-5 catalysts were examined by a TPD method to clarify the extraordinary selectivity of HC-SCR using methane on Ga-ZSM-5. It was observed that Ga-ZSM-5 did not adsorb oxygen but adsorbed methane dissociatively, while on Cu-ZSM-5 oxygen was dissociatively adsorbed and reacted with adsorbed ethylene.     

Influence of substrate direct current bias voltage on microcrystalline silicon growth during radio-frequency magnetron sputtering

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared on glass, aluminum-covered glass and Si wafer substrates at various substrate bias voltages (V_sb) between -400 and +50 V, and the influence of V_sb on their structural properties was investigated. The crystallinity (crystalline volume fraction and crystallite size) of the μc-Si:H films deposited on glass remained unchanged with respect to V_sb. For μc-Si:H films deposited on aluminum within the V_sb range of -20 to +50 V, the crystallinity also remained unchanged and showed the same crystallinity as that of the films deposited on glass substrate. However, the crystallinity of the μc-Si:H films deposited on aluminum-covered substrate was reduced as V_sb decreased from -20 to -100 V, and the film at V_sb=-400 V was completely amorphous.     

Estimating potential disaster waste generation for pre-disaster waste management

The paper discusses development of a method for estimating disaster waste that can be potentially generated by a natural disaster in the future for pre-disaster waste management. In particular, this research focuses on micro-disaster waste originating from household consumer durables. We documented the number of household consumer durables and built a mass per unit database of major consumer durables using web-based and statistical surveys. We also estimated present and future figures of disaster waste that can be generated in the study area. The estimated total amount of disaster waste that could be generated in 2015 was 24.1 kt (18.1–29.8 kt) and 108 kt (81.8–133 kt) for Kobe City and Ise-Shima region, respectively. The total quantities of TV sets, air conditioners, refrigerators, and washing machines generated in Kobe and Ise-Shima will range between 10.9 and 22.8 kt (247,000–545,000 units) in 2015, and 10.7 kt to 22.8 kt (249,000–550,000 units) in 2035. The quantity estimated for 2015 is equal to 61 % of the annual processing capacity of Plant A, Japan’s leading home appliances recycling plant. Finally, we discussed the contribution of the estimation results and geographic information systems in future recycling planning.     

Importance of H2 gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH4/CH4/H2

Silicon carbide (SiC) thin films were prepared by hot-wire chemical vapor deposition from SiH₄/CH₄/H₂ and the influence of H₂ gas flow rate (F(H₂)) on the film properties was investigated. The SiH₄ gas flow rate was 1 sccm. At the CH₄ gas flow rate (F(CH₄)) of 1 sccm, nanocrystalline cubic SiC (nc-3C-SiC) grew even without H₂. On the other hand, at F(CH₄) = 2 sccm, amorphous SiC grew without H₂ and nc-3C-SiC grew above F(H₂) = 50 sccm. As F(H₂) was increased, the crystallinity improved both at F(CH₄) = 1 and 2 sccm. However, the mean crystallite size decreased at F(CH₄) = 1 sccm and increased at F(CH₄) = 2 sccm. We discuss growth mechanisms of nc-3C-SiC.