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101.
Kaname Kanai Takahiro Miyazaki Takanori Wakita Kouki Akaike Takayoshi Yokoya Yukio Ouchi Kazuhiko Seki 《Advanced functional materials》2010,20(13):2046-2052
How annealing influences the morphology of a highly regioregular poly(3‐hexylthiophene) (RR‐P3HT) film at the substrate interface as well as the lateral inhomogeneity in the electronic structure of the film are elucidated. Whereas previous studies have reported that high‐molecular‐weight (MW) RR‐P3HT films tend to show low crystallinity even after annealing, it is found that high‐MW RR‐P3HT does show high crystallinity after annealing at high temperature for a long time. Photoemission electron microscopy (PEEM), X‐ray photoemission spectroscopy, and ultraviolet photoemission spectroscopy results clearly resolve a considerable lateral inhomogeneity in the morphology of RR‐P3HT film, which results in a variation of the electronic structure depending on the local crystallinity. The PEEM results show how annealing facilitates crystal growth in a high‐MW RR‐P3HT film. 相似文献
102.
Shigeyasu Uno Junichi Hattori Kazuo Nakazato Nobuya Mori 《Journal of Computational Electronics》2011,10(1-2):104-120
The acoustic phonon modulation (confinement) in semiconductor nanostructures and their interaction with electrons are reviewed. Special emphasis will be placed on free-standing and layered slabs, as well as nanowires. Analysis includes acoustic phonon dispersion relations, displacement wave functions, amplitudes, form factor, electron-phonon scattering rate, and electron mobility. 相似文献
103.
104.
Shingo Date Hiroshi Ishikawa Tomomi Otani Yukio Takahashi Takanori Nakazawa 《Nuclear Engineering and Design》2008,238(2):353-367
Low-carbon 316 stainless steel with medium-nitrogen (316FR) is considered as the principal structural material for next generation fast breeder reactor (FBR) plants in Japan. The material strength standard and the creep-fatigue life evaluation method for 316FR have been developed. However, they are based on the results of material tests in air, while actual structural material will be used mainly in liquid sodium environment in the plants. In order to clarify the environmental effect, cyclic bending tests were carried out with and without hold time in sodium. Tested materials were 316FR and conventional 304 and 316 stainless steels. Weld metal of 316FR was also tested. As a result, it was found that fatigue and creep-fatigue lives of 316FR in sodium were larger than those in air and no explicit consideration of the environmental effect is necessary in design. It was also found that the life evaluation method based on the ductility exhaustion concept is applicable to creep-fatigue life assessment in sodium. 相似文献
105.
Seiji Motojima Noriyuki Iwamori Tatsuhiko Hattori 《Journal of Materials Science》1986,21(11):3836-3842
Si3N4 layers were obtained on a quartz substrate from a gas mixture of Si2Cl6, NH3 and H2 under a reduced pressure in a temperature range of 800 to 1300‡ C. Amorphous Si3N4 layers that were dense and adherent to the substrate were obtained in a temperature range of 800 to 1100‡ C. On the other
hand,α-Si3N4 layers were obtained at 1200‡ C and a source-gas ratio (N/Si) of 1.33 to 1.77. The lowest deposition temperature of amorphous
Si3N4 was considered to be about 700‡ C. The microhardness of amorphous Si3N4 obtained in a temperature range of 800 to 1100‡ C was 2400 to 2600 kg mm−2 (load: 50 g), and that ofα-Si3N4 obtained at 1200‡ C was 3400 kg mm−2. Chlorine contents in the Si3N4 layer decreased with increasing deposition temperature and source-gas ratio (N/Si), and with decreasing total pressure. 相似文献
106.
Atsushi Satsuma Hironaka Kanbe Kannan Srinivasan Shin-ich Komai Yuichi Kamiya Tadashi Hattori 《Microporous and mesoporous materials》2008,110(2-3):528-533
Nano-sized interlayer space of lamellar vanadyl benzylphosphate was controlled by water content in starting solution. Depending on the water content, three types of lamellar vanadyl benzylphosphate having basal spacings of 1.4 nm, 1.9 nm and 2.3 nm were obtained. It was suggested that the difference in the concentrations of benzyl and hydroxyl groups in the interlayer leads to the variation of the interlayer space. 相似文献
107.
108.
A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure. 相似文献
109.
K. Kakushima K. Okamoto M. Kouda T. Kawanago P. Ahmet K. Tsutsui T. Hattori 《Microelectronics Reliability》2010,50(3):356-359
The chemical bonding states and electrical characteristics of SrO capped La2O3/CeOx gate dielectric have been examined. Angle-resolved X-ray photoelectron spectroscopy measurement has revealed that Sr atoms diffuse into silicate layer to form SrLa-silicate after annealing. Owing to the incorporation of Sr atoms into silicate layer, a transistor operation with an equivalent oxide thickness (EOT) below 0.5 nm has been demonstrated. A strongly degraded effective electron mobility of 78 cm2/V s at 1 MV/cm has been obtained, which fit well with the general trend in small EOT range below 1 nm. Although process optimization is needed to improve the performance of transistors, Sr capping technique can be useful for EOT scaling. 相似文献
110.
Daisuke Kosemura Maki Hattori Tetsuya Yoshida Toshikazu Mizukoshi Atsushi Ogura 《Journal of Electronic Materials》2010,39(6):694-699
Defects and stress gradually accumulate throughout various Si large-scale integration fabrication processes. It is essential
to monitor defects and stress carefully to suppress their unintentional introduction. In this study, we measured the stress
and crystal quality in shallow trench isolation (STI) samples by ultraviolet (UV)-Raman spectroscopy with an extremely high-resolution
wavenumber to evaluate the effect of post-annealing on the recovery of Si crystals. The variations of crystal quality in 200-mm
wafers with STI structures gradually decreased after post-annealing for 4 h, 6 h, and 8 h; however, there was no substantial
difference in the values of full-width at half-maximum of the Raman spectra. Precise measurements of variations of stress
and crystal quality were successfully performed by UV-Raman spectroscopy with a high-resolution wavenumber, which enabled
us to evaluate the STI process accurately. 相似文献