Effects of high pressure treatment on the proteolytic enzymes in meat

This paper describes the effects of high-pressure treatment on proteolytic enzymes in muscle, especially catheptic enzymes which influence meat tenderization, and on acid phosphatase, used as an index of disruption of lysosomal membranes. Acid phosphatase activity in the extract from pressurized muscle increased with increasing pressure applied to the muscle up to 500 MPa. Activity of cathepsin B, D and L increased up to 400 MPa, then tended to decrease at 500 MPa. Cathepsin H and aminopeptidase B decreased with the increasing pressure. Measurements of enzymic activity in the pressurized crude extract, to investigate the pressure effect on the enzymes themselves, showed that all enzymes studied in this paper lost their enzymic activity as applied pressure increased. When the pressurized extracts were subjected to the gel-filtration chromatography, a decrease in the activities of cathepsin H and aminopeptidase B and an increase in the activities of cathepsins B and L and acid phosphatase were observed. It seems that the decrease in activity of the enzymes eluted early from the column (cathepsin H and aminopeptidase B) is due to decrease in the amount of protein eluted by the pressure treatment, whereas the increase in activity of the enzymes eluted late (cathepsin B, L and acid phosphatase) is due to an increase in the amount of protein eluted. From the results, it was concluded that the pressure-induced increase in the amount of protease activity in the muscle was due to the release of the enzymes from lysosomes.     

Polarity control of GaN epilayers grown on ZnO templates

We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH₃ is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH₃ pre-exposure helps form a Zn₃N₂ layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar.     

Microcavity distributed-feedback laser using dye-doped polymeric thin films

An organic microcavity laser, in which all the stacked polymer layers are doped with pyrromethene-567 dye, is presented. Singlemode laser oscillation at 568 nm was obtained that was located in the middle of the stopband. The lasing threshold was found to be 260 nJ/pulse, which corresponded to 300 muJ/cm² in the pulse energy density     

A 50-Gbit/s 450-mW Full-Rate 4:1 Multiplexer With Multiphase Clock Architecture in 0.13- μm InP HEMT Technology

A full-rate multiplexer (MUX) with a multiphase clock architecture for over 40 Gbit/s optical communication systems is presented. The 4:1 MUX is comprised of a re-timer based on a D-type flip-flop (DFF) and a clock tree system that uses EXOR-type delay buffers to match its skews well to those of the data. The supply voltage is reduced to -1.5 V by analyzing the voltage allocation. Fabricated in a 0.13-mum InP HEMT technology, a DFF test circuit achieved 75-Gbit/s operation and exhibited performance sufficient to re-time 50-Gbit/s serialized data. The 4:1 MUX measurement results demonstrate successful 50-Gbit/s operation at room temperature, and 40-Gbit/s operation, which has 10^-11 error free for 2³¹ - 1 pseudorandom bit stream (PRBS) data, up to an ambient temperature of 90 degrees or down to - 1.24 V of supply voltage. The circuit consumes 450 mW at a - 1.5-V supply and exhibits an output jitter of 283 fs rms at 50-Gbit/s operation. We also propose a multiphase clock generator for a MUX that has a serialization of more than four channels     

Multiple quasi-phase-matched device using continuous phase modulation of /spl chi//sup (2)/ grating and its application to variable wavelength conversion

We propose a new multiple quasi-phase-matched wavelength converter based on the continuous phase modulation of a /spl chi//sup (2)/ grating for use in variable wavelength conversion. A numerical study shows that the proposed device exhibits a high conversion efficiency, flexible design, and robust fabrication tolerance. A waveguide device fabricated by annealed proton exchange agrees well with the numerical design. Fine-tuning the device enabled us to demonstrate variable wavelength conversion between signals on the standard optical frequency grid. Using the device, we also demonstrated fast (<100 ps) wavelength switching of 4-channel 40-Gb/s signals. The obtained results clearly show that the proposed multiple quasi-phase-matched devices will be useful when constructing future flexible photonic networks.     

A novel ferromagnetic thermo-stent for plaque stabilization that self-regulates the temperature

The purpose of this study is to investigate the vascular wall with a thermally self-regulating, cylindrical stent made of a low Curie temperature ferromagnetic alloy. Physiologic saline was circulated in the silicone model vessel implanted with the stent. The stent-temperature remained nearly constant for variable saline flows, saline temperatures, and magnetic flux densities. Stent implants of this type in human blood vessels could potentially enable thermotherapy and temperature determination without catheterization.     

Material and process challenges in 100 nm interconnects module technology and beyond

In order for ultra-large-integrated (ULSI) circuits manufacturing to minimize the Cost of Ownership (CoO) aspect in the wiring process and realize fabricating semiconductor devices over 100 nm node, several Cu/low-k wiring technologies have been proposed. The evidential criteria in choosing the most probable one are physical or material limitation and requirements from manufacturing. A development of module processes (e.g., processing from low-k dielectrics to metal CMP) with proven equipment and material is an appropriate approach and has a high potential in overcoming those difficulties. In this paper, an advantage of dual Damascene Cu wiring accompanied with low-k (dielectric constant ∼2.7) and prediction of 100 nm Cu wiring module will be discussed.     

High channel mobility in normally-off 4H-SiC buried channel MOSFETs

We have fabricated buried channel (BC) MOSFETs with a thermally grown gate oxide in 4H-SiC. The gate oxide was prepared by dry oxidation with wet reoxidation. The BC region was formed by nitrogen ion implantation at room temperature followed by annealing at 1500°C. The optimum doping depth of the BC region has been investigated. For a nitrogen concentration of 1×10¹⁷ cm^-3, the optimum depth was found to be 0.2 μm. Under this condition, a channel mobility of 140 cm²/Vs was achieved with a threshold voltage of 0.3 V. This channel mobility is the highest reported so far for a normally-off 4H-SiC MOSFET with a thermally grown gate oxide