Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Temperature characteristics of the open-circuit voltage (V_oc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of V_oc of the InGaP/InGaAs/Ge triple-junction solar cell (dV_oc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.     

Steam gasification of coal cokes in an internally circulating fluidized bed of thermal storage material for solar thermochemical processes

A laboratory-scale prototype windowed internally circulating fluidized-bed reactor made of quartz sand and coal coke particles was investigated for steam gasification using concentrated Xe-light radiation as the energy source. The quartz sand was used as a chemically inert bed material for the fluidized bed, while the coal coke particles functioned as the reacting particles for the endothermic gasification reaction. The advantages of using quartz sand as the bed material for the directly irradiated gasification reactor are as follows: (1) The bed height is maintained at a constant level during the gasification. (2) The quartz sand functions as a thermal transfer/storage medium inside the reactor. The gasification performances such as the production rates of CO, H₂, and CO₂; carbon conversion; and light-to-chemical energy conversion were evaluated for the fluidized-bed reactor with a thermal transfer/storage medium (quartz sand). The effects of using the bed material (quartz sand) on the gasification performance are described in this paper.     

Temporal Specificity of Extinction in Autoshaping.

Three experiments investigated the effects of varying the conditioned stimulus (CS) duration between training and extinction. Ring doves (Streptopelia risoria) were autoshaped on a fixed CS-unconditioned stimulus (US) interval and extinguished with CS presentations that were longer, shorter, or the same as the training duration. During a subsequent test session, the training CS duration was reintroduced. Results suggest that the cessation of responding during an extinction session is controlled by generalization of excitation between the training and extinction CSs and by the number of nonreinforced CS presentations. Transfer of extinction to the training CS is controlled by the similarity between the extinction and training CSs. Extinction learning is temporally specific. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Development of refractory armored silicon carbide by infrared transient liquid phase processing

Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m² in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m² made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.     

Nonintrusive appliance load monitoring based on integer programming

This paper presents a new nonintrusive appliance load monitoring technique based on integer programming. Nonintrusive appliance load monitoring is the problem of identifying the operating conditions of electric appliances in a house by observing only the overall load current and voltage. Since the overall load current is expressed as a superposition of the currents of the operating appliances, the monitoring problem can be formulated as an integer quadratic programming problem by expressing the operating conditions as integer variables. This problem is solvable with a sufficiently small computational burden thanks to the recent development of commercial software. The proposed method does not require relearning even when a new appliance is installed in the house. Furthermore, the proposed formulation is applicable to cases in which some appliance has multiple modes, and cases in which some appliances of the same type are operating simultaneously. The usefulness of the proposed technique is verified by experimental results. © 2010 Wiley Periodicals, Inc. Electr Eng Jpn, 174(2): 18–25, 2011; Published online in Wiley Online Library ( wileyonlinelibrary.com ). DOI 10.1002/eej.21040     

High Temperature Schottky Barrier on n-Type SrTiO3 and Its Sensitivity to Ambient Gases

Metal or oxide electrodes (Pt, Au, Ag, (La, Sr)CoO₃) were deposited on single crystals of 0.02 mol% Nb doped SrTiO₃ by pulsed laser deposition. Current-voltage and capacitance-voltage responses were measured using three-terminal electrode configuration. Under high oxygen partial pressures, clear rectification behaviors were observed. Diffusion model well explained the current vs. voltage relationship with ideality factors close to unity. The barrier height varied reversibly with oxygen partial pressure, and was almost independent of the electrode materials, which suggested that the Fermi level at the interface was pinned by the surface states. The origin of the surface states was discussed in terms of oxygen adsorption or oxidative formation of metal vacancies around the surface. Chemical interaction between the surface and oxygen and resulting cation rearrangement was concluded to play an important role from the long stabilization time on oxygen partial pressure change. The water vapor pressure dependence of the barrier height was also explained by competitive adsorption of oxygen and water.     

Reduced Thermal Budget Process for SBT Thin Film in Planer Type Stack Cell FeRAMs

In order to reduce the thermal budget for SBT crystallization process in planer type stack cell FeRAMs, Rapid Thermal Anneal (RTA) based process for SBT thin film was investigated. Our new process is characterized by crystallization in RTA without any furnace annealing process, and includes a low temperature recovery annealing process (hereafter RTB (Reduced Thermal Budget) process). As a result of only 750C RTA for accumulated time of 60s without furnace annealing process, the sufficient ferroelectric properties were derived in comparison with that of conventional SBT thin film. In the RTB process, two approaches to improve the break down voltage were carried out. First, we used UV exposure during the baking process. By optimizing the UV assisted baking process, a high break down field due to smooth surface morphology was successfully obtained, resulting in break down field of more than 1.2 MV/cm. Secondly, ultra thin SBT films as a top few layer on the base SBT thin film were employed. After optimization of the ultra thin SBT layer thickness, a very smooth SBT surface was successfully achieved, resulting in improvement of the break down field of more than 1.1 MV/cm.     

Improvement in D-E Hysteresis Curve Squareness of PZT Thin Films—Effect of Oxygen Partial Pressure in High-Pressure Post-Annealing

A high-pressure annealing was applied to a post-annealing process for sol-gel derived PZT thin films. The squareness of D-E hysteresis curves changes depending on both total pressure and oxygen concentration. Moreover, the change follows the product of the total pressure and the oxygen concentration, which correspond to oxygen partial pressure P_O2. Where the P_O2 is higher than 0.03 MPa, few of the squareness of the hysteresis curve are excellent. The squareness of the hysteresis curves dramatically improve as the P_O2 decreases. Where the P_O2 is lower than 0.01 MPa, the squareness deteriorates slightly. These changes in the D-E hysteresis curves are thought to be explained by the generation of lead and oxygen vacancies as a function of the P_O2.     

Crystallographic Properties of Ge/Si Heterojunctions Fabricated by Wet Wafer Bonding

Ge/Si heterojunctions formed by wet wafer bonding were observed using transmission electron microscopy and energy-dispersive x-ray spectroscopy. For the samples annealed at 880°C, there was a transition layer at the heterointerface with modified regions in the Si and Ge extending 20 nm to 30 nm from the interface. In these modified regions, crystal defects were observed, and a large amount of Ge was detected on the Si side of the junction. For the samples annealed at 250°C or 350°C, the transition layers had an amorphous-like structure with a thickness of about 10 nm. No modified layer or enlargement of lattice spacing was observed.     

Self-Consistent Quantum Mechanical Monte Carlo MOSFET Device Simulation

We have developed a self-consistent quantum mechanical Monte Carlo device simulator that takes electron transport in quantized states into consideration. Two-dimensional quantized states in MOSFET channels are constructed from one-dimensional solutions of the Schrödinger equation at different positions along the channel, and the Schrödinger and Poisson equations are solved self-consistently in terms of electron concentration and electrostatic potential distribution. The channel electron concentration, velocity and drain currents are calculated with the one particle Monte Carlo approach incorporating the intra-valley acoustic phonon and inter-valley phonon scattering mechanisms. This simulator was applied to a 70 nm n-MOSFET transistor, and we found that current mostly flows through the lowest subband and transport is quasi-ballistic near the source junction. To quantitatively estimate the performance of advanced devices, we have developed an inversion carrier transport simulator based on a full-band model. Our simulation method enables us to evaluate device characteristics and analyze the transport properties of ultra-small MOSFETs.