Curie Temperatures of III–V Diluted Magnetic Semiconductors Calculated from First-Principles in Mean Field Approximation

Electronic structure and ferromagnetism in III–V compound-based diluted magnetic semiconductors (DMS) are investigated based on first-principles calculations by using the Korringa-Kohn-Rostoker method combined with the coherent-potential-approximation. The stability of the ferromagnetic phase in GaN-, GaAs-, GaP-, GaSb-based DMS is investigated systematically. The calculations show that 3d-impurities from the first-half of the transition metal series favor the ferromagnetic state, while impurities from the latter-half of the series exhibit spin-glass behavior. This chemical trend in the magnetism is explained by the double exchange mechanism taking the local symmetry at the impurity gap states into account. Curie temperatures of GaAs- and GaN-based DMS are estimated by using the Heisenberg model in a mean field approximation with the parameters calculated from first-principles. It is suggested that room-temperature ferromagnetism can be realized in these systems.     

基于高速分散的烟火药剂制备工艺

探索高速分散的烟火药剂制备工艺，分析了高速分散制备工艺中的安全性。在实际应用中，此种工艺所制备的烟火药剂有燃烧精度高的优点。     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

MTJ MRAM的特性分析与设计

对 MTJ(磁隧道结 )的 GMR(巨磁阻 )效应进行了分析。 MTJ的结构、形态和工作条件会对 GMR效应产生不同的影响。提出了一种 4× 1位 MTJMRAM(磁存储器 )的电路结构 ,每个 MRAM的存储单元由一个MTJ和一个 MOSFET构成 ,用 MTJ两磁极磁化方向的相对取向表示所存储的数据 ,数字线和位线电流产生磁场的共同作用可完成 MRAM数据的写入。     

Discrete Wavelet Transform: Architectures, Design and Performance Issues

Due to the demand for real time wavelet processors in applications such as video compression [1], Internet communications compression [2], object recognition [3], and numerical analysis, many architectures for the Discrete Wavelet Transform (DWT) systems have been proposed. This paper surveys the different approaches to designing DWT architectures. The types of architectures depend on whether the application is 1-D, 2-D, or 3-D, as well as the style of architecture: systolic, semi-systolic, folded, digit-serial, etc. This paper presents an overview and evaluation of the architectures based on the criteria of latency, control, area, memory, and number of multipliers and adders. This paper will give the reader an indication of the advantages and disadvantages of each design.     

Magnetotransport Calculations for Two-Dimensional Electrons with Spin-Orbit Interaction

We present calculations of the magnetoconductivity in a two-dimensional electron system including the Rashba spin-orbit interaction. Essential for these calculations is an extension of the self-consistent Born approximation which takes into account the electron spin degree of freedom. The calculated magnetoconductivity exhibits, besides the beating in the Shubnikov-de Haas oscillations, a modulation related to the spin-orbit induced crossings of Landau levels, as a consequence of spin-conserving scattering between spin-orbit coupled states.     

机械合金化Fe-Ni粉末的相结构

使用XRD和Moessbauer等方法，研究了在Ar气氛下机械合金化Fe—Ni粉末相结构的变化．结果表明，在机械合金化Fe64-Ni36粉末过程中，fcc相的数量随着球磨时间的增加先增加然后减少，与加乙醇球磨Fe64-Ni36的情形相同．当Ni的含量(原子分数)大于50％时，有fcc相、顺磁相和FeNi3形成，当Ni的含量低于50％时，bcc相的数量随着Ni含量减少而增加．Moessbauer谱的结果表明，因球磨时间或Fe、Ni比例的不同，Fe—Ni球磨粉末固溶体具有不同结构的原子配比。     

高温氨化合成GaN微晶

分别利用Ga2O3粉末和Ga2O3凝胶作为Ga源,采用NH3为N源,在950℃下,分别将两种反应物与流动的NH3反应20 min合成了GaN微晶。用X射线衍射(XRD)、扫描电子显微镜(SEM)、选择区电子衍射(SAED)对微晶进行结构、形貌的分析,特别是对两种不同途径合成GaN微晶的XRD进行了分析比较。结果表明,当Ga源温度为950℃时两种不同的合成途径均可得到六方纤锌矿结构的GaN单晶颗粒,在氮化温度为850℃和900℃时,利用Ga2O3粉末作为Ga源,仅有少量的Ga2O3转变为GaN;而采用Ga2O3凝胶作为Ga源,在相同的温度下,大部分凝胶经过高温氨化反应均可转化为GaN。     

基于数据挖掘的OLAP分析技术及应用

数据仓库和数据挖掘技术是目前信息技术研究的热点问题之一,介绍了数据挖掘(data mining)、数据仓库(datawarehouse)及联机分析处理(OLAP)技术。并以零售业决策支持系统为例,介绍了该系统的体系结构、数据仓库的设计、系统实现关键技术及各子系统功能,着重论述了如何利用OLAP技术实现企业决策支持系统。     

RFCCU反再系统防结焦措施的应用及技术分析

介绍了济南分公司140万t／a RFCCU两个周期运行后反再系统的结焦情况，详细介绍了防治结焦所采取的措施，并进行了技术分析。两次停工后的设备检查，证明所采取的防治措施是十分有效的。