石膏转化制硫酸钾结晶动力学及结晶添加剂研究

研究了浓氨介质中石膏与氯化钾直接转化制硫酸钾的结晶动力学及结晶添加剂的作用效果。结果表明 ,硫酸钾在氨介质中的成核速率与晶体生长速率、悬浮密度、搅拌速率存在如下关联式 :B0 =5 .64 13×10 8G3.32 0 8Mt0 .0 559np0 .2 92 8。加入异丙醇、OP乳化剂及十二烷基苯磺酸钠等添加剂 ,可使硫酸钾结晶产品纯度提高 ,晶体形态整齐均匀     

共面波导有限金属厚度效应的研究

用保角变换法对共面波导金属厚度效应进行了理论分析，编制了相应的计算机程序，给出了数值解，并对此进行了多元曲线拟合，导出了考虑金属厚度后的形状比k、有效介电常数、特征阻抗、损耗的闭定表达式。用此修正表达式求得特征阻抗及损耗的数值解，并与K．C．格普塔的修正值及实验测量值进行了详细比较，结果表明此修正公式与实验值相符较好。     

换热器设计中适宜流体用量的确定

利用换热器的操作线来分析讨论流体用量对传热过程的操作费用和设备费用的影响，找出了换热器设计和选型中适宜流体用量的优化确定方法，简便，快捷，具有一定的适用性。     

热作模具钢表面激光堆焊耐磨合金层的研究

本文主要通过在H13钢上用大功率CO_2激光束进行堆焊,阐述了激光堆焊工艺变化对堆焊组织和性能的影响,在本试验条件下,得到了高密度弥散金属化合物组织的激光堆焊层,平均硬度为HV800,与基体呈冶金结合,耐磨性比H13模具钢提高149%。     

反铁磁晶体的红外频率特性

研究了红外频段非线性s偏振表面波在反铁磁晶体和电介质交界面上的频率特性，求出了非线性色散方程，揭示了非线性s偏振表面波存在一个临界频率，低于这个频率，非线性s偏振表面波的频率范围，发现功率不再是决定导波频率范围的唯一因素，两种材料的介电常数比在这里起了至关重要的作用。     

Analysis of the time response of multiconductor transmission lineswith frequency-dependent losses by the method ofconvolution-characteristics

A new method for analysis of the time response of multiconductor transmission lines with frequency-dependent losses is presented. This method can solve the time response of various kinds of transmission lines with arbitrary terminal networks. Particularly, it can analyze nonuniform lines with frequency-dependent losses, for which no effective method for analyzing their time response exists. This method starts from the frequency-domain telegrapher's equations. After decoupling and inversely Fourier transforming, then a set of decoupled time-domain equations including convolutions are given. These equations can be solved with the characteristic method. The results obtained with this method are stable and accurate. Two examples are given to illustrate the application of this method to various multiconductor transmission lines     

Modeling ion implantation of HgCdTe

Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n⁺/n^-/p, where the n⁺ region is near the surface and roughly coincides with the implant damage, the n^- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background.     

Nonlinear analysis of the ion-ripple laser with the longitudinal component of the ion-ripple field taken into consideration

Ion-ripple laser, which consists of a relativistic electron beam obliquely propagating through an ion-ripple in a plasma, is investigated by nonlinear numerical simulation. The influence of the component of the ion-ripple field parallel to the beam direction on beam-wave interaction is analyzed. The results show that the longitudinal component of the ion-ripple field has a considerable influence on ion-ripple laser. The operating parameters are also optimized.     

一种基于三次样条函数求离子浓度的自动算法

本文提出了一种用三次样条函数模拟双次标准加入法测量方程，直接求解离子浓度的自动算法。比较了三咱不同边界条件下用要池数计算离子浓度的结果。造出节点区间两极端点的二阶导数为零时的三次样条函数为最佳模拟函数。并讨论了该方法在实际分析中误差的来源及消除办法。经对一系列文献数据的验算对比，表明本法完全可代替传统的迭代法和查图法，且能方便地设置在智能化的电位分析系统中。