Development of Millimeter Wave Fabry-Pérot Resonator for Simultaneous Electron-Spin and Nuclear Magnetic Resonance Measurement

We report a Fabry-Pérot resonator with spherical and flat mirrors to allow simultaneous electron-spin resonance (ESR) and nuclear magnetic resonance (NMR) measurements that could be used for double magnetic resonance (DoMR). In order to perform simultaneous ESR and NMR measurements, the flat mirror must reflect millimeter wavelength electromagnetic waves and the resonator must have a high Q value (Q?>?3000) for ESR frequencies, while the mirror must simultaneously let NMR frequencies pass through. This requirement can be achieved by exploiting the difference of skin depth for the two frequencies, since skin depth is inversely proportional to the square root of the frequency. In consideration of the skin depth, the optimum conditions for conducting ESR and NMR using a gold thin film are explored by examining the relation between the Q value and the film thickness. A flat mirror with a gold thin film was fabricated by sputtering gold on an epoxy plate. We also installed a Helmholtz radio frequency coil for NMR and tested the system both at room and low temperatures with an optimally thick gold film. As a result, signals were obtained at 0.18 K for ESR and at 1.3 K for NMR. A flat-mirrored resonator with a thin gold film surface is an effective way to locate NMR coils closer to the sample being examined with DoMR.     

Thin-gate SiO2 films formed by in situ multiple rapidthermal processing

A reliable method of forming very thin SiO₂ films (<10 nm) has been developed by rapid thermal processing (RTP) in which in situ multiple RTP sequences have been employed. Sub-10-nm-thick SiO₂ films formed by single-step RTP oxidation (RTO) are superior to conventional furnace-grown SiO₂ on the SiO₂ /Si interface characteristics, dielectric strength, and time-dependent dielectric-breakdown (TDDB) characteristics. It has been confirmed that the reliability of SiO₂ film can be improved by pre-oxidation RTP cleaning (RTC) operated at 700-900°C for 20-60 s in a 1%HCl/Ar or H₂ ambient. The authors discuss the dielectric reliability of the SiO₂ films formed by single-step RTO in comparison with conventional furnace-grown SiO₂ films. The effects and optimum conditions of RTC prior to RTO on the TDDB characteristics are demonstrated. The dielectric properties of nitrided SiO₂ films formed via the N₂O-oxynitridation process are described     

Development of a Millimeter-Wave Electron-Spin-Resonance Measurement System for Ultralow Temperatures and Its Application to Measurements of Copper Pyrazine Dinitrate

We have developed a millimeter-wave electron-spin-resonance (ESR) measurement system using a ³He-⁴He dilution refrigerator for the ultralow-temperature range below 1 K. The currently available frequency range is 125–130 GHz. This system is based on a Fabry-Pérot-type resonator (FPR) that is composed of two mirrors. The frequency can be changed by adjusting the distance between the mirrors using a piezoelectric actuator installed at the bottom of the resonator. A homodyne detection system with an InSb detector is built into the low-temperature section of the ³He-⁴He dilution refrigerator; this system provides high sensitivity. Using this system, we performed ESR measurements on a Heisenberg quantum-spin chain—copper pyrazine dinitrate, Cu(C₄H₄N₂)(NO₃)₂—over the temperature range from 6.6 down to 0.25 K. The ESR lines change continuously with decreasing temperature. Our results suggest that the ESR spectrum of copper pyrazine dinitrate may be useful as a temperature sensor for the very low-temperature range.     

Improvement of Electrical Contact Between TE Material and Ni Electrode Interfaces by Application of a Buffer Layer

A single ??-structure thermoelectric (TE) module based on p-type NaCo₂O₄, n-type Mg₂Si, and Ni electrode was fabricated by the spark plasma sintering (SPS) method. The NaCo₂O₄ powder was synthesized by using a metal?Ccitric acid complex decomposition method. Bulk Mg₂Si prepared by melt quenching was ground into a powder and sieved to particle size of 75???m or less. To obtain a sintered body of NaCo₂O₄ or Mg₂Si, the powder was sintered using SPS. Pressed Ni powder or mixed powder consisting of Ni and SrRuO₃ powder was inserted between these materials and the Ni electrode in order to connect them, and electrical power was passed through the electrodes from the SPS equipment. The open-circuit voltage (V _OC) values of a single module in which TE materials were connected to the Ni electrodes by using pressed Ni powder was 82.7?mV, and the maximum output current (I _max) and maximum output power (P _max) were 212.4?mA and 6.65?mW at ??T?=?470?K, respectively. On the other hand, V _OC of a single module in which TE materials and an Ni electrode were connected with a mixed powder (Ni:SrRuO₃?=?6:4 volume fraction) was 109?mV, and I _max and P _max were 4034?mA and 109?mW at ??T?=?500?K, respectively. These results indicate that the resistance at the interface between the TE materials and the Ni electrode can be decreased and the output power can be increased by application of a buffer layer consisting of Ni and SrRuO₃.     

Pulsed laser action in Tm,Ho:LuLiF/sub 4/ and Tm,Ho:YLiF/sub 4/ crystals using a novel quasi-end-pumping technique

A number of good quality thulium and holmium-codoped LuLiF/sub 4/ and YLiF/sub 4/ single crystals were successfully grown by the Czochralski crystal growth method under a CF/sub 4/ atmosphere. Using a novel diode-pumped, quasi-end-pump scheme incorporating two lens ducts, pulsed laser action is achieved in 5%Tm, 0.5% Ho:LuLiF/sub 4/ and 5%Tm, 0.5% Ho:YLiF/sub 4/ crystals, at various pulse repetition frequencies and temperatures. At 10 Hz and at an operating temperature of 273 K, slope efficiencies (optical to optical efficiencies) with respect to the incident pump energies of 12.9% (9.2%) and 7.4% (5.2%) were demonstrated in the grown Tm, Ho:LuLiF/sub 4/ and Tm, Ho:YLiF/sub 4/ crystals, respectively. Free running laser output energies in excess of 30 mJ (LuLiF/sub 4/) and 17 mJ (YLF) were measured.     

Lead-free soldering in the Japanese electronics industry

Japan has witnessed prosperous industrial growth since the 1960s, and this growth has given rise to increased awareness by the government and the people regarding environmental responsibility. This responsibility includes the use of "green" materials and the recycling of important resources. Legislation, including the appliances law, requires the Japanese electronics industry to comply with more stringent environmental stipulations. However, Japanese electronics companies have captured international attention by preempting legislation with the introduction of lead-free products in the market with an ambitious target of eliminating the use of lead in electronic products. In this paper, we investigate corporate strategies regarding lead-free product development in light of legislative and environmental issues in Japan.     

On-chip Diamond MEMS Magnetic Sensing through Multifunctionalized Magnetostrictive Thin Film

Electrically integrable, high-sensitivity, and high-reliability magnetic sensors are not yet realized at high temperatures (500 °C). In this study, an integrated on-chip single-crystal diamond (SCD) micro-electromechanical system (MEMS) magnetic transducer is demonstrated by coupling SCD with a large magnetostrictive FeGa film. The FeGa film is multifunctionalized to actuate the resonator, self-sense the external magnetic field, and electrically readout the resonance signal. The on-chip SCD MEMS transducer shows a high sensitivity of 3.2 Hz mT⁻¹ from room temperature to 500 °C and a low noise level of 9.45 nT Hz^−1/2 up to 300 °C. The minimum fluctuation of the resonance frequency is 1.9 × 10⁻⁶ at room temperature and 2.3 × 10⁻⁶ at 300 °C. An SCD MEMS resonator array with parallel electric readout is subsequently achieved, thus providing a basis for the development of magnetic image sensors. The present study facilitates the development of highly integrated on-chip MEMS resonator transducers with high performance and high thermal stability.     

A 146-mm/sup 2/ 8-gb multi-level NAND flash memory with 70-nm CMOS technology

An 8-Gb multi-level NAND Flash memory with 4-level programmed cells has been developed successfully. The cost-effective small chip has been fabricated in 70-nm CMOS technology. To decrease the chip size, a one-sided pad arrangement with compacted core architecture and a block address expansion scheme without block redundancy replacement have been introduced. With these methods, the chip size has been reduced to 146 mm/sup 2/, which is 4.9% smaller than the conventional chip. In terms of performance, the program throughput reaches 6 MB/s at 4-KB page operation, which is significantly faster than previously reported and very competitive with binary Flash memories. This high performance has been achieved by the combination of the multi-level cell (MLC) programming with write caches and with the program voltage compensation technique for neighboring select transistors. The read throughput reaches 60 MB/s using 16I/O configuration.     

Durable Ultraflexible Organic Photovoltaics with Novel Metal‐Oxide‐Free Cathode

Flexible and stretchable organic photovoltaics (OPVs) are promising as a power source for wearable devices with multifunctions ranging from sensing to locomotion. Achieving mechanical robustness and high power conversion efficiency for ultraflexible OPVs is essential for their successful application. However, it is challenging to simultaneously achieve these features by the difficulty to maintain stable performance under a microscale bending radius. Ultraflexible OPVs are proposed by employing a novel metal‐oxide‐free cathode that consists of a printed ultrathin metallic transparent electrode and an organic electron transport layer to achieve high electron‐collecting capabilities and mechanical robustness. In fact, the proposed ultraflexible OPV achieves a power conversion efficiency of 9.7% and durability with 74% efficiency retention after 500 cycles of deformation at 37% compression through buckling. The proposed approach can be applied to active layers with different morphologies, thus suggesting its universality and potential for high‐performance ultraflexible OPV devices.     

Ultrathin Organic Electrochemical Transistor with Nonvolatile and Thin Gel Electrolyte for Long‐Term Electrophysiological Monitoring

Skin‐based electrical‐signal monitoring is one of the basic and noninvasive diagnostic methods for observing vital signals that contain valuable information about the dynamic status of the inner body. Soft bioelectronic devices are developed for the acquisition of high‐quality biosignals by taking advantage of their inherent thin and soft bodies. Among these devices, the organic electrochemical transistor (OECT) is a promising local transducing amplifier because of its key advantages, such as low operating voltage, high transconductance, and biocompatibility. However, the transistor's direct electrolyte‐gated operation limits its ability to measure biosignals only when the electrolyte exists. Here, an ultrathin OECT‐based wearable electrophysiological sensor based on a thin (≈6 µm) and nonvolatile gel electrolyte is reported, which can operate on dry biological surfaces. This sensor can measure biopotentials with a high mechanical stability and high signal‐to‐noise ratio (24 dB) even from dry surfaces of the human body and also shows stable performance during long‐term continuous monitoring and multiple reuse in a test that lasted more than a week.