Silicon power MOSFET at low temperatures: A two-dimensional computer simulation study

Understanding how the structure of the unit-cell affects the cryogenic performance of a Si power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is an important step toward optimizing of the device for cryogenic operations. In this paper, numerical simulations of the Si power Double Diffused MOSFET’ (DMOS) are performed at room temperature and cryogenic temperatures. Physically based models for temperature dependent silicon properties are employed in the simulations. The performances of power DMOS’ with various unit-cell structures are compared at both room temperature and low temperatures. The effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for room temperature operation can be further optimized at cryogenic temperatures.     

Direct evaluation of singular integrals in elastoplastic analysis by the boundary element method

This paper presents a new method for the direct and accurate evaluation of strongly singular integrals in the sense of Cauchy principal values and weakly singular integrals over quadratic boundary elements in three-dimensional stress analysis and quadratic internal cells in two-dimensional elastoplastic analysis by the boundary element method. A quadratic triangle polar co-ordinate transformation technique is applied to reduce the order of singularity of the singular integrals. Next, a form of Stokes' theorem is introduced in order to remove the singularity in the Cauchy principal value integrals; therefore, the evaluation of these integrals can be carried out by standard Gaussian quadrature. Numerical examples of 2-D elastoplastic problems and a 3-D elastic problem show the effectiveness and efficiency of the method.     

β放射性气体浓度计的新分度方法

本文介绍β放射性气体浓度计的一种新的分度方法——泄漏元件排气法。其特点是一只元件可分度放射性气体浓度计的许多读出数(甚至是几个量程),操作方便。     

Improved coupled-mode theory of anisotropic optical waveguides

A coupled-mode equation for anisotropic waveguide systems of arbitrary cross section and general dielectric distribution is derived. Numerical results comparing the exact calculations to those of the method of Hardy et al. (Opt. Lett., vol.11, 742-4, 1986) show that the same accuracy can be obtained not only for TE, but also for TM mode coupling in the case of anisotropic waveguides, and the improved coupled-mode theory is applicable to the situation when moderately strong coupling occurs under the condition where the edge-to-edge separation of two coupled guides D₂ is about 0.1 μm     

一种简易可靠的射频激光调制器

采用ＰＩＮ电调衰减器、ＴＬ４９４等元件组成了射频（ＲＦ）大功率ＣＯ２激光调制器，调制频率、占空比和调制度单独可调。给出了电路的工作原理和测试结果。     

热载流子注入对MOS结构C─V和I─V特性的影响

讨论了热载流子注入对ＭＯＳ结构Ｃ─Ｖ和Ｉ─Ｖ特性的影响。指出热载流子效应引起载流子陷落和界面态的产生，导致Ｃ─Ｖ特性曲线畸变、平带电压漂移和恒定电压下ＳｉＯ２漏电流随时间漂移。本文论述了这些漂移的机理，提出了漂移的ｔｎ物理模型，从而很好地解释了实验所观察到的现象。     

自适应相位制中波同步广播及现场试验

在本试验中，采用智能同步广播激励器和ＣＣＴＶ传输的１ＭＨｚ标频，实现了中波同步广播同频保护率趋于０ｄＢ．并提出了自适应相位跟踪同步的概念。     

OSEK/VDX——汽车电子系统的开放式平台

介绍了当前在国际汽车工业界日益占据主导地位的汽车电子系统开放式平台--OSEK/VDX体系.详细地论述了这种体系的由来、运行机制和最新的发展动向,以及它对汽车电子技术发展的深远影响.     

锌钾硼对甜菜产质量效应及最佳施肥措施的研究

本文利用最优回归设计“310”方案,研究了黑土地甜菜 Zn、K_2O、B的效果及合理施用问题。得出甜菜块根产量、含糖、产糖量、灰分 K 和有害 N 与 ZnK_2O、B 肥回归关系显著的回归模型,分析了 Zn、K_2O、B 对上述五个指标的效应,明确了 Zn 是影响各项指标的主要因子,并采用频率筛选法,提出了兼顾上述五项指标的优质高产施肥措施。