Survey of switching techniques in high-speed networks and their performance

One of the most promising approaches for high speed networks for integrated service applications is fast packet switching, or ATM (asynchronous transfer mode). ATM can be characterized by very high speed transmission links and simple, hard-wired protocols within a network. To match the transmission speed of the network links, and to minimize the overhead due to the processing of network protocols, the switching of cells is done in hardware switching fabrics in ATM networks. A number of designs have been proposed for implementing ATM switches. Although many differences exist among the proposals, the vast majority of them are based on self-routeing multistage interconnection networks. This is because of the desirable features of multi-stage interconnection networks such as self-routeing capability and suitability for VLSI implementation. Existing ATM switch architectures can be classified into two major classes: blocking switches, where blockings of cells may occur within a switch when more than one cell contends for the same internal link, and non-blocking switches, where no internal blocking occurs. A large number of techniques have also been proposed to improve the performance of blocking and non-blocking switches. In this paper, we present an extensive survey of the existing proposals for ATM switch architectures, focusing on their performance issues.     

New type of tin support for hydroprocessing catalyst

TiN supported molybdenum sulfide catalysts showed much higher activity for cleavage of C-C bonds than oxide supported molybdenum sulfide catalysts, indicating the possibility of a new generation of supports for hydroprocessing catalysts.     

The Nanometer-Sized Eutectic Structure of Si/CrSi<Subscript>2</Subscript> Thermoelectric Materials Fabricated by Rapid Solidification

Nanostructuring is known to be an effective method to improve thermoelectric performance but, generally, it requires complex procedures and much labor. In the present study, self-assembled nanometer-sized composite structures of silicon (Si) and chromium disilicide (CrSi₂) were easily fabricated by the rapid solidification of a melt with a eutectic composition. Ribbon-like samples were obtained with a dominant nanostructure of fine aligned lamellae with a spacing range of 20–35 nm. The thermoelectric power factor of the ribbon was observed to be 1.2 mW/mK² at room temperature and reached 3.0 mW/mK² at 773 K. The thermal conductivity was 65% lower than that of a bulk eutectic sample. The results suggest that this method is promising for fabricating an effective nanostructure for thermoelectric performance.     

Demonstration of 100 Gbps optical packet switching using header processor based on 48-bit longest prefix matching

Wire-rate packet processing and its energy saving for over 100 Gbps speed of line are major issues to be resolved in optical packet switching (OPS) networks. For that purpose, we newly develop a high-speed, deterministic-latency electronic header processor based on longest prefix matching (LPM) for searching optical packet destination addresses (OP-DAs). This paper reports the successful experimental results of electronic header processing based on LPM search of up to 48 bits and optical switching of 100 Gbps optical packets by the use of the header processor. We demonstrate 48-bit LPM-capable optical packet switching. We also demonstrate IP packet transfer and 32-bit LPM-capable optical packet switching. In the latter demonstration, the 32-bit OP-DA of optical packets is directly copied from the 32-bit destination address of Internet Protocol version 4 (IPv4) packets. This result indicates that OPS networks can be deployed with electronic IP networks by the use of integrated network operation between OPS and IP networks.     

Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy

We have examined how a growth interruption, caused by closing group-III sources, affects the crystalline quality of InGaN/GaN quantum-well (QW) structures grown by metalorganic vapor phase epitaxy. The QW samples were characterized by their photoluminescence (PL), and by atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy dispersive x-ray (EDX) microanalysis. The PL peak wavelength was strongly dependent on the duration of the growth interruption and on the number of QW layers. AFM measurements revealed that the size of the open hexagonally shaped pits in the QW structures increased dramatically as the interruption duration was lengthened. Through TEM and EDX microanalysis, we found that the formation of these hexahedronal pits, formed due to the growth interruption, causes a large fluctuation in the In composition, especially around the pits, and the presence of such pits in an underlying QW layer strongly affects the In incorporation into the upper QW layers, leading to significant growth-rate variation in an InGaN QW layer and red-shifting of the PL spectra when a multiple-QW structure is grown.     

Analysis and design of a 1.8-2.7 GHz tunable 8-band TDD LTE receiver front-end

This paper describes the analysis and design of a 0.13μm CMOS tunable receiver front-end that supports 8 TDD LTE bands,covering the 1.8-2.7 GHz frequency band and supporting the 5/10/15/20 MHz bandwidth and QPSK/16QAM/64QAM modulation schemes.The novel zero-IF receiver core consists of a tunable narrowband variable gain low-noise amplifier(LNA),a current commutating passive down-conversion mixer with a 2nd order low pass trans-impedance amplifier,an LO divider,a rough gain step variable gain pre-amplifier,a tunable 4th order Chebyshev channel select active-RC low pass filter with cutoff frequency calibration circuit and a fine gain step variable gain amplifier.The LNA can be tuned by reconfiguring the output parallel LC tank to the responding frequency band,eliminating the fixed center frequency multiple LNA array for a multi-mode receiver. The large various gain range and bandwidth of the analog baseband can also be tuned by digital configuration to satisfy the specification requirement of various bandwidth and modulation schemes.The test chip is implemented in an SMIC 0.13μm 1P8M CMOS process.The full receiver achieves 4.6 dB NF,-14.5 dBm out of band IIP3, 30-94 dB gain range and consumes 54 mA with a 1.2 V power supply.     

Ultrastrong Medium‐Entropy Single‐Phase Alloys Designed via Severe Lattice Distortion

Severe lattice distortion is a core effect in the design of multiprincipal element alloys with the aim to enhance yield strength, a key indicator in structural engineering. Yet, the yield strength values of medium‐ and high‐entropy alloys investigated so far do not substantially exceed those of conventional alloys owing to the insufficient utilization of lattice distortion. Here it is shown that a simple VCoNi equiatomic medium‐entropy alloy exhibits a near 1 GPa yield strength and good ductility, outperforming conventional solid‐solution alloys. It is demonstrated that a wide fluctuation of the atomic bond distances in such alloys, i.e., severe lattice distortion, improves both yield stress and its sensitivity to grain size. In addition, the dislocation‐mediated plasticity effectively enhances the strength–ductility relationship by generating nanosized dislocation substructures due to massive pinning. The results demonstrate that severe lattice distortion is a key property for identifying extra‐strong materials for structural engineering applications.     

A method for dispersing dry nano-sized particles in a liquid using carrier particles

A method for dispersing dry particles in a liquid is described. The method involves coating large carrier particles with fine particles. When two types of particles having different sizes are mixed in dry conditions, the particles adhere to one another, and the large particles become coated with small particles. When the large core particles are coated with a mono-layer of small particles, further agglomeration is inhibited. Because the single small particles generated by the disruption adhere to the core particles, we presumed that, if the small particles that are adhered to large particles could be separated from the large particles by a sonication in a liquid, the dry fine particles could be dispersed in a liquid.The dispersion experiments conducted using spherical silica particles having a count median diameter D_p50 of 74 nm as small particles and spherical glass beads as large particles. In this situation, the large particles carry the small particles from a dry condition into a liquid. We refer to the large particles as carrier particles. The experiments revealed that the proposed dispersion procedure results in a superior product, compared to sonication only. The effect of carrier size on dispersion performance is also investigated. The findings indicate and an optimum carrier size exists. Observations of the carrier particle surfaces after dry mixing indicate that the optimum condition is the condition at which a mono-layer of Silica particles is formed.     

Effect of Temperature Change on Interfacial Behavior of an Acoustically Levitated Droplet

Under the microgravity environment, new and high quality materials with a homogeneous crystal structure are expected to be manufactured by undercooling solidification, since the material manufacturing under the microgravity environment is more static than that under the normal gravity. However, the temperature change on the interface of the material in space can affect on the material processing. The purpose of the present study is to investigate effect of the temperature change of interface on the large levitated droplet interface. A water droplet levitated by the acoustic standing wave is heated by YAG laser. In order to heat the water droplet by the laser heating, rhodamine 6G is solved in it to achieve high absorbance of the laser. The droplet diameter is from 4 to 5.5 mm. The deformation of the droplet interface is observed by high speed video camera. The temperature of droplet is measured by the radiation thermometer. It is noticed that the larger droplet under the higher sound pressure tends to oscillate remarkably by the laser heating.     

Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealing

The solid phase epitaxy (SPE) of undoped amorphous Si (a-Si) deposited on SiO₂ patterned Si(001) wafers by reduced pressure chemical vapor deposition (RPCVD) using a H₂-Si₂H₆ gas system was investigated. The SPE was performed by applying in-situ postannealing directly after deposition process. By transmission electron microscopy (TEM) and scanning electron microscopy, we studied the lateral SPE (L-SPE) length on sidewall and mask for various postannealing times, temperatures and a-Si thicknesses. We observed an increase in L-SPE growth for longer postannealing times, temperatures and larger Si thicknesses on mask. TEM defect studies revealed that by SPE crystallized epi-Si exhibits a higher defect density on the mask than at the inside of the mask window. By introducing SiO₂-cap on the sample with 180 nm Si thickness following postannealing at 570 °C for 5 h, the crystallization of up to 450 nm epi-Si from a-Si is achieved. We demonstrated the possibility to use this technique for SiGe:C heterojunction bipolar transistor (HBT) base layer stack to crystallize Si-buffer layer to widen the monocrystalline region around the bipolar window and to improve base link resistivity of the HBT.