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91.
Chun-Tsen Lu Kun-Wei Lin Huey-Ing Chen Hung-Ming Chuang Chun-Yuan Chen Wen-Chau Liu 《Electron Device Letters, IEEE》2003,24(6):390-392
A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated. 相似文献
92.
The microstructure evolution in nonstoichiometric titanium carbide is studied during high-temperature deformation at high strain rates and low strains (shock compression) and at slow strain rates and high strains (superplastic regime). The results demonstrate that high-temperature deformation in a broad range of strain rates offers a means of controlling the microstructure of titanium carbide. By varying deformation conditions, one can obtain materials differing in microstructure and chemical composition, in particular, with equilibrium and nonequilibrium microstructures. Accordingly, the physicochemical properties of such materials also differ. 相似文献
93.
Whispering-gallery-like modes in square resonators 总被引:1,自引:0,他引:1
Wei-Hua Guo Yong-Zhen Huang Qiao-Yin Lu Li-Juan Yu 《Quantum Electronics, IEEE Journal of》2003,39(9):1106-1110
The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers. 相似文献
94.
Shi-Jin Ding Hang Hu Lim H.F. Kim S.J. Yu X.F. Chunxiang Zhu Li M.F. Byung Jin Cho Chan D.S.H. Rustagi S.C. Yu M.B. Chin A. Dim-Lee Kwong 《Electron Device Letters, IEEE》2003,24(12):730-732
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications. 相似文献
95.
The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated using gold-induced lateral crystallization (Au-ILC) technology on a-SiGe:H layers at 10-h 350/spl deg/C annealing temperature and 60-sccm hydrogen (H/sub 2/) content. Using this optimal condition, the growth rate of the induced Au was as large as 15.9 /spl mu/m/h. With a low annealing temperature (/spl les/400/spl deg/C) and large growth rate, this novel technology will be noticeably useful for poly-SiGe:H pin IR-sensing fabrication on a conventional precoated indium tin oxide (ITO)-glass substrate. Under a 1-/spl mu/W IR-LED incident light (with peak wave length at 710 nm) and at a 5-V biased voltage, the poly-SiGe:H pin IR sensor developed by the Au-ILC technology, i.e., an Al (anode)/n poly-SiGe:H/i poly-SiGe:H/p poly-SiGe:H/ITO (cathode)/glass-substrate structure allowed for maximum optical gain and response speed. The optical gains and the response speeds were almost 600 and 130%, respectively, better than that of a traditional pin type. Meanwhile, the FWHM of a poly-SiGe:H pin sensor with Au-ILC technology was reduced from 280 to 150 nm. This reveals excellent IR-sensing selectivity. These IR-sensing trials demonstrated again that the proposed Au-ILC technology has very useful application in the field of low cost integrated circuits on optoelectronic applications. 相似文献
96.
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99.
实验考察了胜利孤东稠油井下催化水热裂解和乳化/催化水热裂解降黏效果。所用催化剂为水溶性铁镍钒体系,Fe3+∶Ni2+∶VO4+=5∶1∶1,100 g稠油与30 g 0.5%催化剂水溶液在240℃反应24小时。原始黏度(50℃)11.0和8.36 Pa.s的两种稠油裂解并静置除水后,黏度降低76.2%和75.6%,室温放置60天后降黏率下降小于3个百分点,气相色谱显示裂解后轻组分明显增加,红外光谱显示稠油组分发生脱羧反应且芳环数减少。讨论了稠油催化水热裂解反应机理。所用化学助剂JN-A在油水中均可溶,耐温达250℃,耐矿化度达50 g/L,其水溶液以30∶100的质量比与稠油混合时形成低黏度的O/W乳状液。当水相含1.0%JN-A和0.5%催化剂时,两种稠油水热裂解后的反应混合物为O/W乳状液,黏度仅为319和309 mPa.s,静置除水后的稠油降黏率增加到86.5%和87.3%,其中的轻组分含量进一步增加。该井下乳化/催化水热裂解复合降黏法成功地用于孤东两口蒸汽吞吐井,稠油井作业后初期采出的原油黏度由~9 Pa.s降低到1 Pa.s左右,随采油时间延长而逐渐升高,约50天后超过4Pa.s。图2表6参5。 相似文献
100.