首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   12663篇
  免费   964篇
  国内免费   456篇
电工技术   641篇
综合类   809篇
化学工业   2202篇
金属工艺   744篇
机械仪表   762篇
建筑科学   1017篇
矿业工程   353篇
能源动力   325篇
轻工业   592篇
水利工程   193篇
石油天然气   803篇
武器工业   73篇
无线电   1437篇
一般工业技术   1724篇
冶金工业   692篇
原子能技术   119篇
自动化技术   1597篇
  2024年   68篇
  2023年   273篇
  2022年   336篇
  2021年   504篇
  2020年   414篇
  2019年   327篇
  2018年   412篇
  2017年   438篇
  2016年   409篇
  2015年   449篇
  2014年   586篇
  2013年   681篇
  2012年   759篇
  2011年   830篇
  2010年   677篇
  2009年   678篇
  2008年   695篇
  2007年   621篇
  2006年   679篇
  2005年   621篇
  2004年   421篇
  2003年   353篇
  2002年   330篇
  2001年   252篇
  2000年   286篇
  1999年   335篇
  1998年   281篇
  1997年   274篇
  1996年   230篇
  1995年   178篇
  1994年   164篇
  1993年   125篇
  1992年   99篇
  1991年   71篇
  1990年   78篇
  1989年   31篇
  1988年   37篇
  1987年   24篇
  1986年   19篇
  1985年   5篇
  1984年   7篇
  1983年   8篇
  1982年   6篇
  1981年   4篇
  1980年   4篇
  1979年   4篇
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
11.
Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi2O2Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi2O2]n2n+ layers and bond with the underlying [Te]n2n− at elevated temperatures, transforming directly into [TeO4]n2n− with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi2TeO6 layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi2O2Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors.  相似文献   
12.
Guo  Chenchen  Zhao  Xiaoming  Zou  Qiang 《Applied Intelligence》2022,52(10):11394-11406
Applied Intelligence - In recent years, person re-identification (re-ID) has become a widespread research topic that focuses on retrieving target pedestrians from a set of images, typically taken...  相似文献   
13.
14.
15.
Lu  Gui-Fu  Zou  Jian  Wang  Yong  Wang  Zhongqun 《Multimedia Tools and Applications》2017,76(14):15801-15816
Multimedia Tools and Applications - Null space based linear discriminant analysis (NSLDA) is a well-known feature extraction method, which can make use of the most discriminant information in the...  相似文献   
16.
International Journal of Control, Automation and Systems - This paper concerns the attitude control problem of a 3D rigid pendulum based on dynamic T-S fuzzy neural model. A generalized 3D rigid...  相似文献   
17.
海面高程的传递是水准测量中的难题.以宁波市象山县某围堤工程变形测量为例,对全站仪进行跨海面高程测量进行了成功应用,并用GPS拟合高程测量方法和平均海平面法进行了验证,结果合理.  相似文献   
18.
A detailed transmission electron microscope (TEM) study has been conducted to investigate the microstructures of the Zr51Cu20.7Ni12Al16.3 metallic glass formed at different cooling rates. It has been found that the most competitive crystalline phase to the amorphous structure is an oxygen-stabilized FCC NiZr2-type phase, which in turn acts as the leading phase to trigger the formation of other crystalline phases in the slow-cooled alloy.  相似文献   
19.
The transient characteristics of grounding systems are essential for their designs and related electromagnetic-compatibility problems in power systems. Although the method of moments (MoM) is a popular way to analyze the characteristics of grounding systems, it is time-consuming. In this paper, a two-stage method is presented to construct fitted models of the frequency-domain responses of grounding systems to accelerate the calculations of the MoM. In the first stage, the adaptive model-based parameter estimation is used to adaptively choose the most valuable frequency sampling points to construct the initial fitted functions, and then the fitted functions are adjusted in the second stage by comparing the fitted results with those computed by the first principle model at some points. The validation was achieved by a comparison of the numerical results and those obtained by inverse fast Fourier transformation.  相似文献   
20.
A novel principle “electret” microphone, i.e., floating electrode electret microphone, is proposed and implemented in this study. Single-chip fabrication and corrugation technique are used in the design and fabrication of the microphone. The floating electrode is encapsulated by highly insulated materials to ensure that there is no electric-leakage passage between the floating electrode and the electrodes of the microphone. Net-free electronic charges (not “bonded” charges as in traditional electret) in the floating electrode can excite the electric field, which is similar to that of the traditional electret. The floating electrode can be easily charged by use of the “hot” electron technique, available using the avalanche breakdown of the p+-n junction. Therefore, the electret microphone is rechargeable, which can greatly increase the lifetime of the device. The preamplifier has been on-chip integrated in a junction-field-effect transistor (JFET) source-follower type with resistors by use of ion implantation. Electret charges are banded in a deep potential trap, thus, this microphone can operate at a high temperature (as high as 300°C) and has high stability and reliability. Experiments show that the prototype has a 3-mV/Pa sensitivity and a larger than 21-kHz frequency bandwidth in a 1 mm ×1-mm diaphragm area. Microphone performance can be further improved by optimized process and design. The fabrication is completely integrated-circuit (IC) compatible, hence, the microphone shows promise in integrated acoustic systems  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号