膨润土复合颗粒制备工艺及其吸附性能研究

针对矿山废水中酸度、重金属离子的高成本处理问题,采用经高温焙烧的膨润土-钢渣复合颗粒对Fe2+、Mn2+、Cu2+和Zn2+进行吸附。从去除效果、碱度释放量及散失率对复合颗粒的最佳制备工艺进行研究,并用其处理模拟酸性矿山废水(AMD)。结果表明,最佳制备工艺条件为：膨润土与钢渣配比5∶5,黏结剂用量5%,焙烧温度500℃,焙烧时间60 min;当吸附剂投加量为10 g/L,吸附时间为240 min时,酸性矿山废水中Fe2+、Mn2+、Cu2+、Zn2+的去除率分别为93.21%、87.31%、100%、89.68%,出水pH值为8.31。膨润土-钢渣复合颗粒可同步降低水中酸度,去除重金属离子,且处理成本较低,值得推广应用。     

1,3-丁二醇的合成方法

1,3-丁二醇是合成各种活性化合物的重要活性中间体。本文综述了1,3-丁二醇工业生产的路线,并重点探讨了两种主要合成方法的优缺点。     

我国乳酸的生产技术及研发状况

介绍了我国乳酸行业目前的生产技术和研发状况,综述了乳酸的主要生产方法(化学合成法、酶法合成、发酵法),对各种方法的特点进行了点评,详细点评了乳酸发酵法生产,并对乳酸发酵技术的前景进行了展望。     

煤化工废水中油泥的聚结分离与水中有机物的去除效果

针对煤化工废水中存在的高浓度油及油泥的问题,本研究制备了高电荷、低聚合度的无机复合材料和低电荷、高聚合度的有机复合材料,探究无机、有机复合材料协同作用下对煤化工废水中油及油泥的聚结分离效果以及对废水中有机物的去除特性。结果表明,无机、有机复合材料在复合比例为500∶1的条件下,废水中油和固体悬浮物（SS）去除率分别达到55%和98%;现场试验发现,无机、有机复合材料对油含量1700～2000mg/L,SS含量为1500～2000mg/L的废水,油和SS的去除率一直稳定于50%和95%左右,表现出较好的稳定性;进一步对废水中典型有机物的去除效果研究可知,该复合材料同时也对废水中各类有机物有较好的去除效果,多环芳烃（PAHs）、苯系物和酚类物质的去除率可达到82.85%、41.9%和37.56%。可以发现,无机、有机复合材料可有效解决煤化工废水中油及油泥的去除问题,具有广阔的产业化应用前景。     

钢栅尺在大型雷达回转轴角度测量中的应用

介绍了新型角度和直线位移传感器(基于电感式的钢栅尺应用特点和工作原理),对比了常用角度传感器的优缺点,论述了某大型雷达俯仰轴采用钢栅尺作为检测元件实现高精度仰角测量的过程。实践证明,钢栅尺作为一种新型的测量传感器,特别适合应用于大尺寸高精度的角度和直线位移检测。     

沉管施工的质量控制

本文结合广州市南沙自来水厂原水输水工程过河管道过鱼窝头涌段沉管施工成功经验，分析总结了沉管施工的质量控制。     

变电站PT保险熔断现象机理分析

在公司辖内的变电站中,电压互感器(PT)保险熔断现象时有发生,影响了电网的安全稳定运行。文章结合变电站现场发生的PT保险熔断现象,通过理论分析,对变电站PT保险熔断现象的根本原因做出解释,并提出解决此问题的方向。     

Influence of growth conditions on the V-defects in InGaN/GaN MQWs

The influence of the growth temperature,TMIn/TEGa andⅤ/Ⅲratio on the V-defects of InGaN/GaN multi-quantum wells（MQWs） has been investigated and discussed.When the TMIn flow increases from 180 to 200 sccm,the density of V-defects increases from 2.72×10¹⁸ to 5.24×10¹⁸ cm^-2,and the V-defect width and depth increase too.The density also increases with the growth temperature.The densities are 2.05×10⁸,2.72×10¹⁸ and 4.23×10⁸ cm^-2,corresponding to a growth temperature of 748,753 and 758℃respectively.When the NH₃ flows are 5000,6600 and 8000 sccm,the densities of the V-defects of these samples are 6.34×10¹⁸,2.72×10¹⁸ and 4.13×10¹⁸ cm^-2,respectively.A properⅤ/Ⅲratio is needed to achieve step flow growth mode.We get the best quality of InGaN/GaN MQWs at a growth temperature of 753℃TMIn flow at 180 sccm,NH₃ flow at 6600 sccm,a flatter surface and less V-defects density.The depths of these V-defects are from 10 to 30 nm,and the widths are from 100 to 200 nm.In order to suppress the influence of V-defects on reverse current and electro-static discharge of LEDs,it is essential to grow thicker p-GaN to fill the V-defects.     

Improvement of the efficiency droop of GaN-LEDs using an AlGaN/GaN superlattice insertion layer

With an n-AlGaN(4 nm)/GaN(4 nm) superlattice(SL) inserted between an n-GaN and an InGaN/GaN multiquantum well active layer,the efficiency droop of GaN-based LEDs has been improved.When the injection current is lower than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL is relatively small compared to that without an n-AlGaN/GaN SL.However,as the injection current increases more than 100 mA,the lumen efficiency of the LED with an n-AlGaN/GaN SL surpasses that of an LED without an n-AlGaN/GaN SL. The wall plug efficiency of an LED has the same trend as lumen efficiency.The improvement of the efficiency droop of LEDs with n-AlGaN/GaN SLs can be attributed to a decrease in electron leakage due to the enhanced current spreading ability and electron blocking effect at high current densities.The reverse current of LEDs at -5 V reverse voltage decreases from 0.2568029 to 0.0070543μA,and the electro-static discharge(ESD) pass yield of an LED at human body mode(HBM)-ESD impulses of 2000 V increases from 60%to 90%.     

插入n-AlGaN/GaN超晶格改善GaN基LED的droop效应

在GaN基LED的n-GaN和InGaN/GaN发光区之间插入n-AlGaN/GaN超晶格来改善其droop效应。注入电流低于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率低于没有插入层的LED。注入电流高于100mA时,插入n-AlGaN/GaN超晶格的LED的流明效率高于没有插入层的LED。插入n-AlGaN/GaN超晶格后,GaN基LED在-5V的反向电压下,漏电由2.568029μA减少到0.070543μA。人体模式下,插入n-AlGaN/GaN超晶格的LED在2000V的静电电压下的通过率从60%提高到了90%。LED droop效应的改善是因为n-AlGaN/GaN超晶格过滤了穿透位错并改善了电流扩展能力。