化学抛光处理和低温退火对硅异质结太阳电池性能的影响

Amorphous/crystalline silicon heterostructure solar cells have been fabricated by hot wire chemical vapor deposition （HWCVD） on textured p-type substrates. The influence of chemical polish （CP） etching and the post annealing process on the solar cell performance have been studied. The CP treatment leads to a reduction of stress in the i-layer by the slight rounding of the pyramid peaks, therefore improving the deposition coverage and the contact by each layer, which is beneficial for the performance of the solar cells. An optimized etching time of 10-15 s has been obtained. A post annealing process leads to a considerably improved open voltage （Voc）, filled factor （FF）, and conversion efficiency （η） by restructuring the deposited film and reducing the series resistance. An efficiency of 15.14% is achieved that represents the highest result reported in China for an amorphous/crystalline heterostructure solar cells based on the textured p-type substrates.     

以煤为原料的石油化学基础产品——用Fischer-Tropsch法生产化工原料及中间产品

在西德的研究一技术部协助下所进行的研究中,Union Rheinsche Kraftsoff AG公司对于具备怎样的前提条件才能由煤生产石油化学基础产品这一问题进行了调查。首先,对已发表的有关F-T法的大量文献作了调查,并对方法1和2的经济性进行了比较。除对所关心的方法给予批判性评价外还指出,在这项研究中,用目     

煤焦油的分析

关于煤焦油的分析报告很多,但至今尚未进行毛细管气相色谱与质谱联用的研究。本工作中采用Varian2700气相色谱装置,自己改进毛细管柱,并与Varian-CH-4质谱联用。试样为脱水原油经减压     

用标度理论和蒙特卡洛方法研究微晶硅薄膜的生长机制

使用热丝化学气相沉积技术制备微晶硅薄膜(沉积速度为1.2nm/s),通过原子力显微镜研究了薄膜前期生长的粗糙化过程.按照标度理论获得微晶硅薄膜的生长因子为β≈O.67,粗糙度因子为α≈O.80,动力学因子为1/z=0.40.这些标度指数不能用一般的生长模型来解释.通过蒙特卡罗模拟给出与实验一致的结果.模拟表明,入射流方向、生长基元的类型和浓度、生长基元的粘滞、再发射和影蔽过程都对微晶硅薄膜的表面形貌有比较重要的影响.     

用高效液相色谱法(HPLC)分析多环芳烃

最近,由于与致癌问题有关,对大气污染物质中的高分子量的多环芳烃(PAH)引起了注意。本文介绍一种用氨基硅烷μ-Bond p a-k NH_2作为HPLC固定相的分离脂肪烃与PAH的方法。一般用硅胶或氧化铝作     

Mobil过程——以甲醇为原料制造汽油的过程

在美国,汽车用汽油在石油制品中所占比例极大,据认为今后也将继续这种倾向。另外,作为原料用的原油价格也有逐年急剧上涨的趋势。在日本,汽油所占比例较小,但在将来当发电用燃料为原子能等其他能源所取代时,车用汽油和航空燃     

掺Sn的In203透明导电膜生长优先取向对其光电性能的影响

采用反应热蒸发法制备掺sn的In203（ITO）透明导电膜，系统研究了ITO薄膜生长的优先取向对其光电性能的影响，结果表明，ITO薄膜（400）取向的优先生长对其透过率影响很小，但可明显增加载流子迁移率，从而有效降低了薄膜的方块电阻。在两个相同的薄膜硅／单晶硅太阳能电池上分别沉积（222）和（400）ITO优先取向膜，光电转换效率分别为10．3％和12．9％，表明（400）取向更有利于提高电池效率。经优化，最佳衬底温度（Ts）为225℃，最佳氧流量（fo2）为4sccm。在优化的沉积条件下制备ITO薄膜，其电阻率可达到4.8x10^-4Ω·cm，可见波段的透过率大于90％，性能指数为3.8×10^-2□/Ω。     

Influence of the initial transient state of plasma and hydrogen pre-treatment on the interface properties of a silicon heterojunction fabricated by PECVD

Amorphous/crystalline silicon heterojunctions(a-Si:H/c-Si SHJ) were prepared by plasma-enhanced chemical vapor deposition(PECVD).The influence of the initial transient state of the plasma and the hydrogen pre-treatment on the interfacial properties of the heteroj unctions was studied.Experimental results indicate that: (1) The instability of plasma in the initial stage will damage the surface of c-Si.Using a shutter to shield the substrate for 100 s from the starting discharge can prevent the influence of the instable plasma process on the Si surface and also the interface between a-Si and c-Si.(2) The effect of hydrogen pre-treatment on interfacial passivation is constrained by the extent of hydrogen plasma bombardment and the optimal time for hydrogen pre-treatment is about 60 s.