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In this work we investigate the effects of NO annealing and forming gas (FG) an-nealing on the electrical properties of SiO2/SiC interface by low-temperature con-ductance measurements. With nitrogen passivation, the density of interface states (DIT) is significantly reduced in the entire energy range, and the shift of flatband voltage, ΔVFB, is effectively suppressed to less than 0.4 V. However, very fast states are ob-served after NO annealing and the response frequencies are higher than 1 MHz at room temperature. After additional FG annealing, the DIT and ΔVFB are further re-duced. The values of the DIT decrease to less than 1011 cm-2eV-1 for the energy range of EC-ET≥0.4 eV. It is suggested that the fast states in shallow energy levels origi-nated from the N atoms accumulating at the interface by NO annealing. Though FG annealing has a limited effect on these shallow traps, hydrogen can terminate the re-sidual Si and C dangling bonds corresponding to traps at deep energy levels and im-prove the interface quality further. It is indicated that NO annealing in conjunction with FG annealing will be a better post-oxidation process method for high perfor-mance SiC MOSFETs. 相似文献
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通过1 300℃高温干氧热氧化法在n型4H-SiC外延片上生长了厚度为60 nm的SiO2栅氧化层.为了开发适合于生长低界面态密度和高沟道载流子迁移率的SiC MOSFET器件产品的栅极氧化层退火条件,研究了不同退火条件下的SiO2/SiC界面电学特性参数.制作了MOS电容和横向MOSFET器件,通过表征SiO2栅氧化层C-V特性和MOSFET器件I-V特性,提取平带电压、C-V磁滞电压、SiO2/SiC界面态密度和载流子沟道迁移率等电学参数.实验结果表明,干氧氧化形成SiO2栅氧化层后,在1 300℃通入N2退火30 min,随后在相同温度下进行NO退火120 min,为最佳栅极氧化层退火条件,此时,SiO2/SiC界面态密度能够降低至2.07×1012 cm-2·eV-1@0.2 eV,SiC MOSFET沟道载流子迁移率达到17 cm2·V-1·s-1. 相似文献
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位于郑州东南部107国道与航海路交汇处的郑州经济技术开发区始建于1993年4月,1997年被省政府批准为省级经济技术开发区,2000年2月13日被批准为国家经济技术开发区,预规划面积13平方公里。自去年该区成立消防科以来,严格按照管委会党委提出的"以事业统一思想,以发展凝聚力量,以实干树立形象"宁肯自己千辛万苦,不让企业一事为难"现在就办,我帮你办,马上就办"的开发区精神,全心全意为企业服务,搞好消防监督和消防执法。为了避免企业跑冤枉路,防止暗箱操作,他们改变以往旧的办公模式,完善服务职能,实行一站式服务。消防科与建… 相似文献
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