全文获取类型
收费全文 | 569596篇 |
免费 | 6286篇 |
国内免费 | 1006篇 |
专业分类
电工技术 | 10627篇 |
综合类 | 471篇 |
化学工业 | 90670篇 |
金属工艺 | 23394篇 |
机械仪表 | 18547篇 |
建筑科学 | 12583篇 |
矿业工程 | 4314篇 |
能源动力 | 14522篇 |
轻工业 | 45966篇 |
水利工程 | 6944篇 |
石油天然气 | 14963篇 |
武器工业 | 39篇 |
无线电 | 60632篇 |
一般工业技术 | 116601篇 |
冶金工业 | 96230篇 |
原子能技术 | 14722篇 |
自动化技术 | 45663篇 |
出版年
2021年 | 5539篇 |
2019年 | 5290篇 |
2018年 | 9240篇 |
2017年 | 9441篇 |
2016年 | 9874篇 |
2015年 | 6061篇 |
2014年 | 10314篇 |
2013年 | 26215篇 |
2012年 | 15874篇 |
2011年 | 21201篇 |
2010年 | 17057篇 |
2009年 | 18910篇 |
2008年 | 19178篇 |
2007年 | 18863篇 |
2006年 | 16357篇 |
2005年 | 14833篇 |
2004年 | 14069篇 |
2003年 | 13774篇 |
2002年 | 13310篇 |
2001年 | 12912篇 |
2000年 | 12386篇 |
1999年 | 12077篇 |
1998年 | 27929篇 |
1997年 | 20205篇 |
1996年 | 15731篇 |
1995年 | 12081篇 |
1994年 | 10930篇 |
1993年 | 10677篇 |
1992年 | 8364篇 |
1991年 | 8134篇 |
1990年 | 8015篇 |
1989年 | 7805篇 |
1988年 | 7504篇 |
1987年 | 6768篇 |
1986年 | 6559篇 |
1985年 | 7413篇 |
1984年 | 6726篇 |
1983年 | 6458篇 |
1982年 | 5795篇 |
1981年 | 5921篇 |
1980年 | 5650篇 |
1979年 | 5756篇 |
1978年 | 5685篇 |
1977年 | 6205篇 |
1976年 | 7728篇 |
1975年 | 5117篇 |
1974年 | 4917篇 |
1973年 | 4989篇 |
1972年 | 4282篇 |
1971年 | 4043篇 |
排序方式: 共有10000条查询结果,搜索用时 0 毫秒
81.
Buttari D. Chini A. Meneghesso G. Zanoni E. Moran B. Heikman S. Zhang N.Q. Shen L. Coffie R. DenBaars S.P. Mishra U.K. 《Electron Device Letters, IEEE》2002,23(2):76-78
Pre-metal-deposition reactive ion etching (RIE) was performed on an Al0.3Ga0.7N/AlN/GaN heterostructure in order to improve the metal-to-semiconductor contact resistance. An optimum AlGaN thickness for minimizing contact resistance was determined. An initial decrease in contact resistance with etching time was explained in terms of removal of an oxide surface layer and/or by an increase in tunnelling current with the decrease of the AlGaN thickness. The presence of a dissimilar surface layer was confirmed by an initial nonuniform etch depth rate. An increase in contact resistance for deeper etches was experienced. The increase was related to depletion of the two-dimensional (2-D) electron gas (2-DEG) under the ohmics. Etch depths were measured by atomic force microscopy (AFM). The contact resistance decreased from about 0.45 Ωmm for unetched ohmics to a minimum of 0.27 Ωmm for 70 Å etched ohmics. The initial thickness of the AlGaN layer was 250 Å. The decrease in contact resistance, without excessive complications on device processing, supports RIE etching as a viable solution to improve ohmic contact resistance in AlGaN/GaN HEMTs 相似文献
82.
Nahler A. Irmer R. Fettweis G. 《Selected Areas in Communications, IEEE Journal on》2002,20(2):237-247
Since code division multiple access systems in multipath environments suffer from multiple access interference (MAI), multiuser detection schemes should be used in the receivers. Parallel interference cancellation (PIC) is a promising method to combat MAI due to its relatively low computational complexity and good performance. It is shown that the complexity of PIC is still high for realistic scenarios in terms of the symbol rate, the number of users, spreading gain, and multipath components. However, two novel methods are introduced to reduce significantly the complexity without sacrificing performance. The first approach, called reduced PIC, takes advantage of the composition of the interference to concentrate interference cancellation only on significant terms. The second approach, called differential PIC, exploits the multistage character of PIC to avoid unnecessary double calculations of certain terms in consecutive stages. It is shown that a combination of both approaches leads to a performance very close to the single-user bound whereas the complexity can be kept on the order of the conventional RAKE receiver 相似文献
83.
Losada M.A. Garces I. Mateo J. Salinas I. Lou J. Zubia J. 《Lightwave Technology, Journal of》2002,20(7):1160-1164
We have studied the optical power losses due to multiple curvatures in polymethylmetacrylate (PMMA) plastic optical fibers (POFs) of different numerical apertures (NAs) and attenuation. The fibers were tested for several configurations in order to assess the influence of different types of curved-to-straight fiber transitions in the amount of power radiation. We found that losses are below the standards for all tested fiber types, and thus, they are a suitable choice for local area network (LAN) applications. In addition, our results revealed the presence of modal interactions as confirmed using an experimental procedure to estimate the mode coupling strength for the same fibers. 相似文献
84.
A. Ivanov 《Journal of Electronic Testing》2002,18(4-5):361-362
85.
Integrated chaos generators 总被引:4,自引:0,他引:4
Delgado-Restituto M. Rodriguez-Vazquez A. 《Proceedings of the IEEE. Institute of Electrical and Electronics Engineers》2002,90(5):747-767
This paper surveys the different design issues, from mathematical model to silicon, involved in the design of analog CMOS integrated circuits for the generation of chaotic behavior 相似文献
86.
Tan J.C. Crossley P.A. McLaren P.G. Hall I. Farrell J. Gale P. 《Power Delivery, IEEE Transactions on》2002,17(1):68-74
This paper describes a sequential tripping strategy used in a wide area back-up protection expert system (BPES) to combat situations in which protection relays have maloperated or information is missing. The BPES is an innovative back-up protection scheme designed to prevent the occurrence of widespread blackouts. The BPES evaluates the certainty that transmission lines are likely to be affected by the fault and uses a sequential tripping strategy to isolate the fault if a firm decision is not available due to maloperated relays and/or missing information. The mode of analysis and the sequential tripping strategy ensures that the BPES will clear a fault at minimum risk to the network. An example is included to demonstrate how the certainty factor based sequential tripping strategy is employed by the BPES to clear a fault which occurred on the South Western part of the UK National Grid System 相似文献
87.
88.
89.
90.