二极管侧面抽运薄片激光器耦合系统研究

设计了二极管侧面抽运Nd:YAG薄片激光器,耦合系统由消像差透镜组和空心光波导组成,对二极管快轴和慢轴方向的抽运光进行压缩和均匀化.采用光线追迹法,同时考虑二极管在快轴和慢轴方向的发散特性及薄片侧面的散射特性,模拟并分析了光线在耦合系统内的传输和薄片内抽运光分布的规律.模拟结果表明耦合系统具有98.1%的耦合效率,同时薄片内具有理想的抽运光分布.     

纳米AlN粉末的制备与烧结

利用低温燃烧合成前驱物制备出平均粒度为100 nm的AlN陶瓷粉末,比较了该粉末的常压烧结和放电等离子烧结的特性.实验表明:以合成的AlN粉末为原料,添加5%(质量比)Y2O3作为烧结助剂,在常压、流动N2气氛下1600℃保温3 h,制备出平均晶粒尺寸为4～8 μm、密度为3.28 g·cm-3的AlN陶瓷;将同样的粉末不加任何烧结助剂,采用SPS技术在1600℃保温4 min,得到密度为3.26 g·cm-3的AlN陶瓷,晶粒度约为1～2μm.     

结构优化分子筛的制备及其催化裂化性能Ⅱ.结构优化分子筛的催化裂化性能

利用结构优化改性前后的分子筛作为活性组元制备出一系列催化剂,并通过重油微反及ACE-Model R+固定流化床评价其催化裂化性能,并进行了比较.结果表明,采用气相超稳制备的分子筛再经稀土离子优化改性后,用其制成的催化剂的催化裂化反应的转化率显著提高,重油裂化能力明显增强,汽油中烯烃的含量大幅度降低.     

IP网络上电路倍增设备的研究

简要介绍了通过IP网络上电路倍增设备(IP CME)的数据流的处理过程;IP CME中的复用技术;控制IP包发送的激活算法;网络发生拥塞丢包的处理方法;并在传输效率和信令处理2个方面与VOIP进行比较,可以看出IP CME具有很大的优越性和良好的发展前景。     

软锰矿氧化硫化钡制高纯碳酸锰和氢氧化钡工艺研究

软锰矿同硫化钡溶液在较低温度下进行氧化还原反应，当硫化钡含量控制在26-75g／L范围内，软锰矿与硫化钡的物质的量比为2．5-3，反应时间50-60min，软锰矿被硫化钡还原为MnO，其还原率可达93．5％以上；还原后的锰用硫酸浸取，溶液经除杂后，与碳酸铵反应而制成高纯碳酸锰。硫化钡则被氧化为氢氧化钡，经蒸发、结晶而制得入水氢氧化钡，其回收利用率高速95％。     

浇筑式沥青混凝土心墙型式改进的建议

本文根据浇筑式沥青混凝土主、副心墙材料的性能，分折了沥青混凝土心墙施工或运行中破坏的原因，建议用编织一无纺复合布取代预制块，以避免主、副心墙材料变形性能相差悬残对心墙运行的不利影响，从而发挥浇筑式沥青混凝土心墙的优越性。     

A new Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor

A new and interesting Pd-oxide-Al/sub 0.3/Ga/sub 0.7/As MOS hydrogen sensor has been fabricated and studied. The steady-state and transient responses with different hydrogen concentrations has been measured at various temperatures. Based on the large Schottky barrier height and presence of oxide layer, the studied device exhibits a high hydrogen detection sensitivity and wide temperature operating regime. The studied device exhibits the low-leakage current and obvious current changes when exposed to hydrogen-contained gas. Even at room temperature, a very high hydrogen detection sensitivity of 155.9 is obtained when a 9090 ppm H/sub 2//air gas is introduced. Furthermore, when exposed to hydrogen-contained gas at 95/spl deg/C, both the forward and reverse currents are substantially increased with increased hydrogen concentration. In other words, the studied device can be used as a hydrogen sensor under the applied bidirectional bias. Under the applied voltage of 0.35 V and 9090 ppm H/sub 2//air hydrogen ambient, a fast adsorption response time about 10 s is found. The transient and steady-state characteristics of hydrogen adsorption are also investigated.     

Scaling planar silicon devices

The generation-over-generation scaling of critical CMOS technology parameters is ultimately bound by nonscalable limitations, such as the thermal voltage and the elementary electronic charge. Sustained improvement in performance and density has required the introduction of new device structures and materials. Partially depleted SOI, a most recent MOSFET innovation, has extended VLSI performance while introducing unique idiosyncrasies. Fully depleted SOI is one logical extension of this device design direction. Gate dielectric tunneling, device self-heating, and single-event upsets present developers of these next-generation devices with new challenges. Strained silicon and high-permittivity gate dielectric are examples of new materials that will enable CMOS developers to continue to deliver device performance enhancements in the sub-100 nm regime.     

玻璃微珠的表面化学镀银及红外辐射性能研究

采用化学镀方法在玻璃微珠表面镀银,考察了预处理条件、反应温度和反应时间等因素对玻璃微珠表面镀银的影响,并通过扫描电镜和X-射线衍射分析仪,对镀银后玻璃微珠的表面形貌和结构进行了观察和表征。将镀银玻璃微珠用于涂料中,考察了玻璃微珠在涂料中的应用及其红外辐射率的变化,探讨了化学镀条件对涂料红外辐射率的影响,结果表明,在控制反应温度和浓度的条件下,可使镀银玻璃微珠的红外辐射率由原来的1.02降为0.70,将其应用于涂料后,涂层的红外辐射率为0.80。     

流量比对等离子体基团分布和薄膜结构的影响

使用光强标定的发射光谱(AOES)测量了CHF3／C6H6混合气体的微波电子回旋共振(ECR)放电等离子体中基团的分布状态。实验发现随着CHF3流量的增加，成膜基团CF、CF2、CH等的相对密度增大，而刻蚀基团F的密度也会增加，从而使得a—C：F薄膜的沉积速率降低。同时红外吸收谱(IR)分析表明，在高CHF3流量下沉积的a—C：F薄膜中含有更高的C—F键成分。可见在a—C：F薄膜的制备中CHF3／(CHF3 C6H6)流量比是重要的控制参量。