Research on the Distant Hybrids of Wheat Obtained via Low-Energy Ion-Beam Implantation

Abstract The whole DNA of soybean was implanted into four varieties of wheat of Zhongyu5, Huaiyin 9628, Wenyou 1, Jimai 5 respectively via ion-beam mediation. There were 5 plantsobtained whose protein content was higher than 18.5%, the highest one was 21.44%. There were 3plants obtained whose protein content was lower than 11.5%, the lowest one was 10.96%. We cansee that the whole DNA of soybean transformed into wheat via ion beam implantation can inducethe increase in wheat protein content dramatically. The result also shows that the transformationefficiency of different gene types of wheat receptor varies greatly that the implanting time has acertain effect on the efficiency of transformation.     

大面积硅锂漂移探测器制备及其性能

制备了大面积硅锂漂移探测器,其性能为:探测器的灵敏面积123.6 cm~2;灵敏层深度2 mm;在室温和300 V反向偏压的工作条件下漏电流小于20 μA;对~(241)Am 5.486 MeV α粒子的能量分辨(FWHM)为77.67 keV。     

动态矩阵控制系统稳定域的根轨迹分析

本文使用根轨迹技术从理论上分析了纯滞后工业过程参数变化对系统稳定性的影响,得到了一个与设计参数有关的稳定域,从而为设计参数自动整定提供了参考。     

THE ANALYSIS OF THE SEPARATED LAYERS ALGORITHM BY DOMAIN DECOMPOSITION METHOD

From the principle of of the Domain Decomposition Method (DDM), we analyse the 2nd-order linear elliptic partial differential problems and link the Separated-Layers Algorithm (SLA) with DDM. The mathematical properties of SLA and numerical example are presented to obtain satisfactory computation results. For general linear differential ones, also are the structure of SLA and its characteristics discussed.     

提高E^2PROM中NMOS管源漏穿通电压的实验研究

为了提高Ｅ＾２ＰＲＯＭ中Ｎ管源漏穿通电压，用实验的方法对制造工艺进行了研究。结果表明，高能量注入是提高ＶＰＴ的有效手段，但受到ｐｎ结击穿的限制，只适用于低区短沟Ｎ管；ＤＤＤ工艺大幅度高ＶＰＴ，但ｐｎ结击穿电压低于２０Ｖ，不能应用于高压ＭＯＳ管；采用适量的防穿通注入和适当增大沟道长度为最理想的工艺途径。     

CARR水平孔道的设计特点

介绍了中国先进研究堆(CARR)水平孔道的用途、在堆本体的布置、水平孔道结构设计及设计方面的特点。     

卤化银探测器及其某些特性

文中简述了卤化银(主要是溴化银)单晶片的某些特性,氯化银单晶片与此大致相似。作为低温晶体探测器,对~(241)Am-α放射源,分辨率为17%。卤化银晶片是固体电解质,只有Ag离子对输出电信号有贡献,有显著的极化现象。在液氮槽内溴化银晶片的电导率在几个数量级内成为可控的,由在室温下外加偏置电压大小所引起的分解状态下的初始电流决定。