排列互比法用于超精测角的研究

作者分析了我互比法现行的两种数据处理方法的缺点，提出了应用最小二乘法原理推导出合理的数据处理方法。本文还首次从理论上阐明了排列互比法测量结果中出现一次谐波系统误差的原因，提出了减少和消除这一些系统误差的方法，并给实验验证。     

ⅡB型LBO光参量振荡器

二极管泵浦的Nd:YAG激光器美国加州圣克拉拉的Continuum公司推出的HPO-300型高功率二极管泵浦Nd:YAG激光器,在1064nm波长输出3mJ.该激光器重复率在1～300Hz可产生接近衍射极限的脉冲。     

多层介质光学膜系的误差分析——膜层厚度变化的灵敏度因子

文中推导了对于给定膜系的特定膜层的厚度变化的灵敏度因子计算公式，并给出了用计算机对不同膜系的计算实例。分析了厚度灵敏度因子对膜系透射光谱的灵敏谱段、灵敏膜层等特性的影响规律，并由此给出了确定膜层厚度允差的方法。     

Patterning of mammalian somites by surface ectoderm and notochord: evidence for sclerotome induction by a hedgehog homolog

An early step in the development of vertebrae, ribs, muscle, and dermis is the differentiation of the somitic mesoderm into dermomyotome dorsally and sclerotome ventrally. To analyze this process, we have developed an in vitro assay for somitic mesoderm differentiation. We show that sclerotomal markers can be induced by a diffusible factor secreted by notochord and floor plate and that heterologous cells expressing Sonic hedgehog (shh/vhh-1) mimic this effect. In contrast, expression of dermomyotomal markers can be caused by a contact-dependent signal from surface ectoderm and a diffusible signal from dorsal neural tube. Our results extend previous studies by suggesting that dorsoventral patterning of somites involves the coordinate action of multiple dorsalizing and ventralizing signals and that a diffusible form of Shh/Vhh-1 mediates sclerotome induction.     

Plasma immersion ion implantation for SOI synthesis: SIMOX and ion-cut

We have demonstrated feasibility to form silicon-on-insulator (SOI) substrates using plasma immersion ion implantation (PIII) for both separation by implantation of oxygen and ion-cut. This high throughput technique can substantially lower the high cost of SOI substrates due to the simpler implanter design as well as ease of maintenance. For separation by plasma implantation of oxygen wafers, secondary ion mass spectrometry analysis and cross-sectional transmission electron micrographs show continuous buried oxide formation under a single-crystal silicon overlayer with sharp Si/SiO₂ interfaces after oxygen plasma implantation and high-temperature (1300°C) annealing. Ion-cut SOI wafer fabrication technique is implemented for the first time using PIII. The hydrogen plasma can be optimized so that only one ion species is dominant in concentration and there are minimal effects by other residual ions on the ion-cut process. The physical mechanism of hydrogen induced silicon surface layer cleavage has been investigated. An ideal gas law model of the microcavity internal pressure combined with a two-dimensional finite element fracture mechanics model is used to approximate the fracture driving force which is sufficient to overcome the silicon fracture resistance.     

极尖断面为折线的四极透镜磁性能研究

对传统双曲线极尖的四极透镜进行了磁性能分析。在此基础上，提出了极尖断面为折线的四极透镜结构。磁场的数值分析以及测量结果表明：该结构产生的场梯度均匀，且具有磁场集中、磁场梯度高、便于加工和安装的对称性控制等优点。该结构的四极透镜已用于ＣＹＣＩＡＥ－３０回旋加速器和ＨＩ－１３串列加速器束流输运线之中     

东营深层盐膏层钻井液工艺

胜利油田东营深层盐膏地层发育,盐膏段厚度大,分布范围广,地层岩性十分复杂,钻井中经常发生喷、漏、塌、卡,遇阻、划眼、电测遇阻等井下复杂事故。郝科1井是在该区设计的一口重点深探井,宅钻井深5807.81m,井底最高温度230℃。介绍了深层盐膏层钻井液体系的转化工艺、性能控制、维护处理、防漏、堵漏、固相控制、抗污染和钻具缓蚀等技术,以及MMH聚合物饱和盐水钻井液在郝科1井的成功应用。结果表明,该钻井液在高密度下对盐膏层具有较强的抑制性、悬浮携砂性和抗污染性,抗温220—230℃。MMH聚合物饱和盐水钻井液体系及其配套技术满足了深层盐膏层钻井施工需要。     

导电环接触电阻的改进测量方案

介绍了导电环接触电阻测量方法的现状,提出了在测量过程中防止导线缠绕的两种改进方案,通过分析验证,说明改进后的测量方案能够很好的完成导电环接触电阻的测量.     

Temperature Dependence of Ultra-Low-Frequency Dielectric Relaxation of Barium Titanate Ceramic

Based on a linear voltage ramp method, ultraslow dielectric relaxation of undoped BaTiO₃ ceramic has been carefully measured over the temperature range between − 180° and +120°C. Temperature dependence of the dielectric constant in the frequency range from 10 ⁻⁵ to 10⁻¹ Hz can be obtained using Kramers–Kronig equations. Close to the Curie temperature, the dielectric constant increases so rapidly that the Curie peak is overwhelmed. Two kinds of relaxation processes were observed in this experiment. Ferroelectric domain and mobile charge are proposed to be responsible for the relaxation over the temperature range. With temperature increasing, Maxwell–Wagner relaxation associated with mobile charge gradually dominates. From relaxation time constants at various temperatures, relaxation activation energies about 0.06 and 0.09 eV are identified.