全文获取类型
收费全文 | 49527篇 |
免费 | 4522篇 |
国内免费 | 1917篇 |
专业分类
电工技术 | 2691篇 |
技术理论 | 9篇 |
综合类 | 3037篇 |
化学工业 | 8652篇 |
金属工艺 | 2765篇 |
机械仪表 | 3365篇 |
建筑科学 | 3714篇 |
矿业工程 | 1727篇 |
能源动力 | 1482篇 |
轻工业 | 2778篇 |
水利工程 | 785篇 |
石油天然气 | 3876篇 |
武器工业 | 443篇 |
无线电 | 5497篇 |
一般工业技术 | 5981篇 |
冶金工业 | 2502篇 |
原子能技术 | 528篇 |
自动化技术 | 6134篇 |
出版年
2024年 | 549篇 |
2023年 | 993篇 |
2022年 | 1530篇 |
2021年 | 2034篇 |
2020年 | 1607篇 |
2019年 | 1344篇 |
2018年 | 1532篇 |
2017年 | 1706篇 |
2016年 | 1505篇 |
2015年 | 1967篇 |
2014年 | 2409篇 |
2013年 | 2916篇 |
2012年 | 2941篇 |
2011年 | 3311篇 |
2010年 | 2768篇 |
2009年 | 2687篇 |
2008年 | 2764篇 |
2007年 | 2523篇 |
2006年 | 2604篇 |
2005年 | 2291篇 |
2004年 | 1441篇 |
2003年 | 1352篇 |
2002年 | 1223篇 |
2001年 | 1098篇 |
2000年 | 1212篇 |
1999年 | 1428篇 |
1998年 | 1127篇 |
1997年 | 948篇 |
1996年 | 849篇 |
1995年 | 765篇 |
1994年 | 632篇 |
1993年 | 471篇 |
1992年 | 362篇 |
1991年 | 262篇 |
1990年 | 220篇 |
1989年 | 152篇 |
1988年 | 136篇 |
1987年 | 87篇 |
1986年 | 65篇 |
1985年 | 37篇 |
1984年 | 29篇 |
1983年 | 31篇 |
1982年 | 27篇 |
1981年 | 15篇 |
1980年 | 11篇 |
1979年 | 4篇 |
1978年 | 1篇 |
排序方式: 共有10000条查询结果,搜索用时 15 毫秒
101.
102.
Jinchen Zhou Bo Gao Daofu Wu Changqing Tian Hongmei Ran Wei Chen Qiang Huang Wenxia Zhang Fei Qi Nan Zhang Yayun Pu Jing Qiu Zhiping Hu Juan Du Zhengzheng Liu Yuxin Leng Xiaosheng Tang 《Advanced functional materials》2024,34(3):2308411
In this study, a new type of lead-free double perovskite Cs2TeBr6 combined with metal-free semiconductor g-C3N4 heterojunction is constructed and used for photocatalytic CO2 reduction for the first time. The S-scheme charge transfer mechanism between Cs2TeBr6 and g-C3N4 is systematically verified by X-ray photoelectron spectroscopy (XPS), electron spin resonance (ESR) and in situ Fourier infrared spectroscopy(FT-IR). The formation of S-type heterojunction makes the photocatalyst have higher charge separation ability and highest redox ability. The results show that 5%-CTB/CN heterojunction material has the best photocatalytic reduction effect on CO2 under visible light irradiation. After 3 h of illumination, the yield of CO and CH4 are 468.9 µmol g−1 and 61.31 µmol g−1, respectively. The yield of CO is 1.5 times and 32 times that of pure Cs2TeBr6 and g-C3N4, and the yield of CH4 is doubled compared with pure Cs2TeBr6. However, g-C3N4 almost does not produce CH4, which indicates that the construction of heterojunction helps to further improve the photocatalytic performance of the material. This study provides a new idea for the preparation of Cs2TeBr6/g-C3N4 heterojunction and its effective interfacial charge separation. 相似文献
103.
Jun Chen Guilai Zhang Jun Xiao Jiayi Li Yang Xiao Dingyi Zhang Hong Gao Xin Guo Guoxiu Wang Hao Liu 《Advanced functional materials》2024,34(1):2307959
Bimetallic composites exhibit great potential as anode materials in advanced energy storage systems owing to their inherent tunability, cost-effectiveness, and simultaneous achievement of high specific capacity and low reaction potential. However, simple biphase mixing often fails to achieve satisfactory performance. Herein, an innovative stress self-adaptive bimetallic stellar nanosphere (50–200 nm) wherein bismuth (Bi) is fabricated, as a core, is seamlessly encapsulated by a tin (Sn) sneath (Sn-Bi@C). This well-integrated stellar configuration with bimetallic nature embodies the synergy between Bi and Sn, offering fortified conductivity and heightened sodium ion diffusion kinetics. Moreover, through meticulous utilization of finite element analysis simulations, a homogeneous stress distribution within the Sn-enveloped Bi, efficiently mitigating the structural strain raised from the insertion of Na+ ions, is uncovered. The corresponding electrode demonstrates remarkable cyclic stability, as it exhibits no capacity decay after 100 cycles at 0.1 A g−1. Furthermore, it achieves an impressive 86.9% capacity retention even after an extensive 2000 cycles. When employed in a Na3V2(PO4)3 ‖ Sn-Bi@C full cell configuration, it demonstrates exceptional capacity retention of 97.06% after 300 cycles at 1 A g−1, along with a high energy density of 251.2 W h kg−1. 相似文献
104.
Tingting Zhang Hailong Tian Siyuan Qin Yajie Gao Xiaoyue Zhang Edouard C. Nice Zhongyan Du Canhua Huang 《Advanced functional materials》2024,34(18):2313384
Currently, the understanding of the cyclic GMP-AMP synthase (cGAS)-stimulator of interferon genes (STING) pathway's involvement in efficient immunotherapy mainly revolves around the role of mitochondria or nucleus modulation. Nonetheless, the role of endoplasmic reticulum (ER) stress in activating the cGAS-STING mechanism to boost immunity against tumors remains essentially unexplored. Herein, novel findings demonstrating that ER stress can be used as a strategy for stimulating the cGAS-STING pathway, thereby augmenting the immune response against cancer, are presented. To accomplish this objective, ER-targeting p-methylbenzene sulfonamide-tailored IR780 (p-780) is synthesized and it is loaded into CaO2 nanoparticles, which are further functionalized with distearoyl phosphoethanolamine-polyethylene glycol(DSPE-PEG)-biotin to form PEG/CaO2@p-780 NPs. The disruption of calcium homeostasis, coupled with the heightened levels of reactive oxygen species (ROS) mediated by p-780, along with hyperpyrexia, collectively contributes to the amplification of endoplasmic reticulum (ER) stress. This cascade of events effectively triggers the cGAS-STING pathway and, in parallel, facilitates the degradation of the programmed cell death 1 ligand 1 (PD-L1) protein. In addition, oxygen released through CaO2 decomposition is expected to promote p-780–mediated phototherapy, while reversing the immunosuppressive tumor microenvironment associated with hypoxia. Furthermore, DSPE-PEG-biotin facilitates tumor site-specific drug delivery through active targeting mediated by the biotin receptor. Collectively, PEG/CaO2@p-780 nanoparticles successfully activate systemic antitumor immunity by enhancing ER stress. 相似文献
105.
Chengdeng Wang Jiamao Hao Jun Wu Haofeng Shi Liubing Fan Jiashuai Wang Zhaokun Wang Zhi Wang Lu Yang Yan Gao Xiaoqin Yan Yousong Gu 《Advanced functional materials》2024,34(18):2313308
Sulfide solid electrolytes (SSEs) have become an ideal candidate material for all-solid-state Li metal batteries (ASSLMBs) because of their high ionic conductivity. However, the vile Li incompatibility and poor air stability of SSEs barriers their commercial application. Herein, novel Li6+2xP1−xInxS5−1.5xO1.5xCl (0 ≤ x ≤ 0.1) SSEs are synthesized via In and O co-doped Li6PS5Cl. By regulating the substitution concentration, the prepared Li6.12P0.92In0.08S4.88O0.12Cl exhibits considerable ionic conductivity (2.67 × 10−3 S cm−1) and enhanced air stability. Based on the first-principles density functional theory (DFT) calculation, it is predicted that In3+ replaces P5+ to form InS45− tetrahedron and O2− replaces S2− to form PS3O4− group. The mechanism of enhancing air stability by In, O co-substituting Li6PS5Cl is clarified. More remarkably, the formation of Li-In alloys induced by Li6.16P0.92In0.08S4.88O0.12Cl electrolyte at the anode interface is beneficial to reducing the migration barrier of Li-ions, promoting their remote migration, and enhancing the stability of the Li/SSEs interface. The optimized electrolyte shows superior critical current density (1.4 mA cm−2) and satisfactory Li dendrite inhibition (stable cycle at 0.1 mA cm−2 over 3000 h). The ASSLMBs with Li6.16P0.92In0.08S4.88O0.12Cl electrolyte reveal considerable cycle stability. This work emphasizes In, O co-doping to address redox issues of sulfide electrolytes. 相似文献
106.
Changsong Gao Di Liu Chenhui Xu Junhua Bai Enlong Li Xianghong Zhang Xiaoting Zhu Yuanyuan Hu Zhixian Lin Tailiang Guo Huipeng Chen 《Advanced functional materials》2024,34(18):2313217
Organic photoelectric neuromorphic devices that mimic the brain are widely explored for advanced perceptual computing. However, current individual neuromorphic synaptic devices mainly focus on utilizing linear models to process optoelectronic signals, which means that there is a lack of effective response to nonlinear structural information from the real world, severely limiting the computational efficiency and adaptability of networks to static and dynamic information. Here, a feedforward photoadaptive organic neuromorphic transistor with mixed-weight plasticity is reported. By introducing the potential of the space charge to couple gate potential, photoexcitation, and photoinhibition occur successively in the channel under the interference of constant light intensity, which enables the device to transform from a linear model to a nonlinear model. As a result, the device exhibits a dynamic range of over 100 dB, exceeding the currently reported similar neuromorphic synaptic devices. Further, the device achieves adaptive tone mapping within 5 s for static information and achieves over 90% robustness recognition accuracy for dynamic information. Therefore, this work provides a new strategy for developing advanced neuromorphic devices and has great potential in the fields of intelligent driving and brain-like computing. 相似文献
107.
Jiawen You Zijing Jin Yuyin Li Ting Kang Kenan Zhang Wenliang Wang Mengyang Xu Zhaoli Gao Jiannong Wang Jang-Kyo Kim Zhengtang Luo 《Advanced functional materials》2024,34(10):2311134
Mixed-dimensional heterostructures provide additional freedom to construct diverse functional electronic and optoelectronic devices, gaining significant interest. Herein, highly-aligned pseudo-1D tellurium is epitaxially grown on 2D monolayer transition metal dichalcogenides (TMDs), including MoSe2, MoS2, and WS2. A one-pot chemical vapor deposition (CVD) technique eliminates the normally required transfer steps, thereby producing mixed-dimensional heterostructures with an ultraclean interface. The controllable epitaxial growth of Te/TMD heterostructures are verified by Raman, scanning probe microscopy (SPM), and transmission electron microscopy (TEM) observation. The photoluminescence results indicate that the emission from TMDs is quenched in the heterostructure, confirming the efficient transfer of photogenerated carriers from TMDs to Te. Additionally, the mixed-dimensional p-n Te/MoSe2 heterojunction photodetector presents self-driven behavior with high responsivity (328 mA W−1), external quantum efficiency (79%), and specific detectivity (8.2 × 109 Jones). The modified facile synthesis strategy and proposed growth mechanism in this study shed light on synthesizing mixed-dimensional heterojunctions. This opens avenues for fabricating functional devices with reduced sizes and high densities, further enabling miniaturization and integration opportunities. 相似文献
108.
Shicong Jiang Wan-Yu Wu Fangbin Ren Chia-Hsun Hsu Xiaoying Zhang Peng Gao Dong-Sing Wuu Chien-Jung Huang Shui-Yang Lien Wenzhang Zhu 《International journal of molecular sciences》2022,23(24)
In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-quality GaN material as a foundation. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of the ALD process with the use of plasma and is often used to deposit thin films with different needs. However, residual oxygen during growth has always been an unavoidable issue affecting the quality of the resulting film, especially in growing gallium nitride (GaN) films. In this study, the NH3-containing plasma was used to capture the oxygen absorbed on the growing surface to improve the quality of GaN films. By diagnosing the plasma, NH2, NH, and H radicals controlled by the plasma power has a strong influence not only on the oxygen content in growing GaN films but also on the growth rate, crystallinity, and surface roughness. The NH and NH2 radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a rougher surface, and a lower bandgap. In addition, the deposition mechanism of GaN thin films prepared with a trimethylgallium metal source and NH3/Ar plasma PEALD involving oxygen participation or not is also discussed in the study. 相似文献
109.
110.