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991.
Cuprous iodide (CuI) crystals are grown by slow evaporation technique in three different solvents. Large CuI single crystals with dimensions of 7.5 mm × 5 mm × 3 mm are obtained in pure acetonitrile solvent at 40 °C. The as-grown crystals are analyzed by X-ray diffraction, energy-dispersive X-ray analysis, differential scanning calorimetry, current-voltage characteristic and photoluminescence spectrum. The results show that the CuI crystal has the zinc-blende structure with no secondary phase. The elemental Cu/I ratio is 1.09:1. The melting point of the crystal is 875 K and two phase transitions occur from room temperature to its melting point. The electrical conductivity of CuI platelet crystal is in the range of 1.11-2.38 Ω−1 cm−1. Under ultraviolet excitation, the CuI crystals exhibit three emission bands with peak positions at 426, 529 and 671 nm. The nature of the luminescence is discussed. 相似文献
992.
993.
Li Xujun Pan Yong Gong Yueqiu Huang Renjie Liao Jiajia Xie Shuhong Zhou Yichun Gao Xingsen 《Journal of Materials Science: Materials in Electronics》2014,25(3):1416-1422
(Na0.85K0.15)0.5Bi0.5Ti(1-x)Nb x O3 (NKBT-N100x) thin films were deposited on Pt/Ti/SiO2/Si(100) substrates by metal–organic decomposition method and annealed in oxygen atmosphere at 750 °C. The effects of niobium concentration on the microstructures, ferroelectric, piezoelectric, leakage current and mechanical properties of the NKBT-N100x (x = 0, 0.01, 0.03, 0.05) thin films have been investigated in detail. The NKBT-3N thin film has the largest remnant polarization (7 μC/cm2) and statistically averaged d 33eff (140 pm/V), the smallest leakage current, elasticity modulus (102.0 Gpa), hardness (5.1 Gpa) and residual stress (297.0 Mpa). The evaluation of residual stresses of these thin films will offer useful guidelines of safe working condition for their potential application in microelectromechanical system. 相似文献
994.
995.
Piezoresistive Pressure Sensor Based on Synergistical Innerconnect Polyvinyl Alcohol Nanowires/Wrinkled Graphene Film 下载免费PDF全文
Weijie Liu Nishuang Liu Yang Yue Jiangyu Rao Feng Cheng Jun Su Zhitian Liu Yihua Gao 《Small (Weinheim an der Bergstrasse, Germany)》2018,14(15)
Piezoresistive sensor is a promising pressure sensor due to its attractive advantages including uncomplicated signal collection, simple manufacture, economical and practical characteristics. Here, a flexible and highly sensitive pressure sensor based on wrinkled graphene film (WGF)/innerconnected polyvinyl alcohol (PVA) nanowires/interdigital electrodes is fabricated. Due to the synergistic effect between WGF and innerconnected PVA nanowires, the as‐prepared pressure sensor realizes a high sensitivity of 28.34 kPa?1. In addition, the device is able to discern lightweight rice about 22.4 mg (≈2.24 Pa) and shows excellent durability and reliability after 6000 repeated loading and unloading cycles. What is more, the device can detect subtle pulse beat and monitor various human movement behaviors in real‐time. 相似文献
996.
997.
Zhang Peng Wang Kunjie Liu Xianrong Wang Li Gao Wensheng 《Journal of Materials Science》2022,57(1):517-525
Journal of Materials Science - The electrochemical performance of RGO-based super-capacitors are highly dependent on the exfoliation and surface functionalization degree of RGO, which of them... 相似文献
998.
Gao Yufu Wu Shaohua Li Chuncheng Xiao Yaonan Liu Jiajian Zhang Bo 《Journal of Materials Science》2022,57(19):8701-8713
Journal of Materials Science - Poly(p-phenylene benzobisoxazole) (PBO) fibre-based specialty paper has become a promising candidate for high-performance insulating materials due to the remarkable... 相似文献
999.
1000.
Xin Zhou Lu Wan Han Li Xueliang Yang Jingwei Chen Kunpeng Ge Jun Yan Cuili Zhang Qing Gao Xuning Zhang Jianxin Guo Feng Li Jianming Wang Dengyuan Song Shufang Wang Benjamin S. Flavel Jianhui Chen 《Small (Weinheim an der Bergstrasse, Germany)》2023,19(10):2205848
The innate inverse Auger effect within bulk silicon can result in multiple carrier generation. Observation of this effect is reliant upon low high-energy photon reflectance and high-quality surface passivation. In the photovoltaics industry, metal-assisted chemical etching (MACE) to afford black silicon (b-Si) can provide a low high-energy photon reflectance. However, an industrially feasible and cheaper technology to conformally passivate the outer-shell defects of these nanowires is currently lacking. Here, a technology is introduced to infiltrate black silicon nanopores with a simple and vacuum-free organic passivation layer that affords millisecond-level minority carrier lifetimes and matches perfectly with existing solution-based processing of the MACE black silicon. Advancements such as the demonstration of an excellent passivation effect whilst also being low reflectance provide a new technological route for inverse Auger multiple carrier generation and an industrially feasible technical scheme for the development of the MACE b-Si solar cells. 相似文献