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991.
提出了一种利用FPGA发出的伪随机序列检测微弱光信号的方法。用伪随机序列调制LED或LD光源,注入测量光纤,输出光信号经过光电转换后与伪随机序列的调制信号做相关检测。由于伪随机序列具有与白噪声相近的相关特性,测量过程中的干扰、噪声对相关峰值影响很小。因此,可以检测到微弱的输出光信号,提高了测量精度。测量系统由LabVIEW虚拟仪器实现。  相似文献   
992.
Due to the toxicity of lead (Pb), Pb-containing solder alloys are being phased out from the electronics industry. This has lead to the development and implementation of lead-free solders. Being an environmentally compatible material, the lead-free Sn-3.0Ag-0.5Cu (wt.%) solder alloy is considered to be one of the most promising alternatives to replace the traditionally used Sn-Pb solders. This alloy composition possesses, however, some weaknesses, mainly as a result of its higher melting temperature compared with the Sn-Pb solders. A possible way to decrease the melting temperature of a solder alloy is to decrease the alloy particle size down to the nanometer range. The melting temperature of Sn-3.0Ag-0.5Cu lead-free solder alloy, both as bulk and nanoparticles, was investigated. The nanoparticles were manufactured using the self-developed consumable-electrode direct current arc (CDCA) technique. The melting temperature of the nanoparticles, with an average size of 30 nm, was found to be 213.9°C, which is approximately 10°C lower than that of the bulk alloy. The developed CDCA technique is therefore a promising method to manufacture nanometer-sized solder alloy particles with lower melting temperature compared with the bulk alloy.  相似文献   
993.
The microstructure and microhardness of Sn-xAg and Sn-xCu solders were investigated as functions of alloy composition and cooling rate. The Ag compositions examined varied from 0.5 wt.% to 3.5 wt.%, while Cu varied from 0.5 wt.% to 2.0 wt.%. Three cooling rates were employed during solidification: 0.02°C/s (furnace cooling), about 10°C/s (air cooling), and 100°C/s or higher (rapid solidification). Sn grain size and orientation were observed by cross-polarization light microscopy and electron-backscattering diffraction (EBSD) techniques. The microhardness was measured to correlate the mechanical properties with alloy compositions and cooling rates. From this study, it was found that both alloy composition and cooling rate can significantly affect the Sn grain size and hardness in Sn-rich solders. The critical factors that affect the microstructure–property relationships of Sn-rich solders are discussed, including grain size, crystal orientation, dendrite cells, twin boundaries, and intermetallic compounds (IMC).  相似文献   
994.
Using first-principles calculations based on density functional theory, we have investigated the nature of H defects in CdTe. The formation energy calculations indicate that the ground state position of the H inside the CdTe lattice depends on charge state: the lowest energy position for H0 and H+ is at the bond center site, while H prefers the tetrahedral interstitial site with Cd nearest neighbors (TCd). We find that H in CdTe acts as an amphoteric impurity. In p-type samples, H is in a positive charge state, acting as a donor to neutralize the free holes in the valence band, and in n-type samples H acquires an electron, compensating the donors in the sample.  相似文献   
995.
The effect of co-channel interference (CCI) is considered in multiple-input multiple-output (MIMO) systems employing maximal ratio combining (MRC) under independent and identically distributed Rayleigh fading. Closed-form capacity and symbol error rate expressions are presented to evaluate the performance without any numerical integrations or statistical simulations. The analytical results are compared with Monte Carlo simulations and the good agreement is obtained.
Xianyi RuiEmail:
  相似文献   
996.
Inspired by the high ZT value lately attained in Ar-protected ball-milled nanocrystalline p-BiSbTe bulk alloy, we report herein an investigation of the effects of ball-milling atmosphere on the thermoelectric (TE) properties of the traditional TE material (GeTe)85(AgSbTe2)15 (TAGS-85). TAGS-85 samples were prepared via a melting–quenching–annealing process, and then ball-milled in different atmospheres and subsequently densified using a spark plasma sintering technique. The Seebeck coefficient, electrical conductivity, thermal conductivity, and Hall coefficient were measured as a function of temperature from 10 K to 310 K. It was found that different ball-milling atmospheres, i.e., air, liquid N2 (LN2), and Ar, profoundly affected the TE properties. A state-of-the-art figure of merit ZT ≈ 0.30 was attained at 310 K in the Ar-ball milled sample. The results are discussed in terms of the carrier concentration, mobility, crystallinity, and the grain boundary scattering.  相似文献   
997.
Thin-film Bi2Te3- and Sb2Te3-based superlattice (SL) thermoelectric (TE) devices are an enabling technology for high-power and low-temperature applications, which include low-noise amplifier cooling, electronics hot-spot cooling, radio frequency (RF) amplifier thermal management, and direct sensor cooling. Bulk TE devices, which can pump heat loads on the order of 10 W/cm2, are not suitable in these applications due to their large size and low heat pumping capacity. Recently, we have demonstrated an external maximum temperature difference, ΔT max, as high as 58 K in an SL thin-film pn couple. This state-of-the-art couple exhibited a cold-side minimum temperature, T cmin, of −30.9°C. We regularly attain ΔT max values in excess of 53 K, in spite of the many significant electrical and thermal parasitics that are unique to thin-film devices. These measurements do not use any complex thermal management at the heat sink to remove the heat flux from the TE device’s hot side. We describe here multistage SL cooling technologies currently being developed at RTI that can provide useful microcooling cold-side temperatures of 200 K. This effort includes a three-stage module employing independently powered stages which produced a ΔT max of 101.6 K with a T cmin of −75°C, as well as a novel two-wire three-stage SL cascade which demonstrated a T cmin of −46°C and a ΔT max of nearly 74 K. These RTI modules are only 2.5 mm thick, significantly thinner than a similar commercial three-stage module (5.3 mm thick) that produces a ΔT max of 96 K. In addition, TE coolers fabricated from these thin-film SL materials perform significantly better than the extrapolated performance of similar thickness bulk alloy materials.  相似文献   
998.
Sun  Yue  Zhu  Yu  Li  Ying  Zhang  Mingyu 《Wireless Personal Communications》2020,111(1):83-96
Wireless Personal Communications - The existing long term evolution networks originally designed for human-to-human communications are hard to tackle numerous and bursty random access requests from...  相似文献   
999.
郄广  张岩 《移动通信》2020,(1):80-85
为了助力车联网技术科学的普及,主要介绍车联网产业政策及标准进展,并系统介绍了车联网发展的目标、车联网的组成、系统架构、解决方案、关键技术、测试方法、网络安全、基础建设及产业链急需突破的技术,比如芯片及传感器的成本问题等。  相似文献   
1000.
The visible light communication (VLC) network is usually relatively small scale and can provide high-data-rate information transmission, where multiple users get access to the network according to the carrier sense multiple access with collision avoidance (CSMA/CA) mechanism specified by IEEE 802.15.7 standard. In this paper, we propose a novel dynamic contention window with successive transmission (DCW-ST) scheme to improve the performance of this channel access mechanism and to achieve better network throughput without delay performance degradation. Specifically, we propose to adjust the contention window dynamically to adapt to the time-changing network size. Further, we derive the contention window size to achieve trade-off of throughput and delay, and the minimum contention window size required for the throughput enhancement. In addition, in order to further improve the delay performance, we present a successive transmission scheme that allows the nodes which have completed one transmission successfully to get the chance of transmitting information successively according to the network condition. Simulations are performed for the VLC system in saturated traffic and compared with the theoretical performances, which demonstrate that our proposed scheme outperforms the legacy CSMA/CA of IEEE 802.15.7.  相似文献   
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