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71.
72.
Xie K. Zhao J.H. Flemish J.R. Burke T. Buchwald W.R. Lorenzo G. Singh H. 《Electron Device Letters, IEEE》1996,17(3):142-144
A 6H-SiC thyristor has been fabricated and characterized. A forward breakover voltage close to 100 V and a pulse switched current density of 5200 A/cm2 have been demonstrated. The thyristor is shown to operate under pulse gate triggering for turn-on and turn-off, with a rise time of 43 ns and a fall time of less than 100 ns. The forward breakover voltage is found to decrease by only 4% when the operating temperature is increased from room temperature to 300°C. It is found that anode ohmic contact resistance dominates the device forward drop at high current densities 相似文献
73.
2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study
We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method 相似文献
74.
Chun Hu Ji Zhao Li G.P. Liu P. Worley E. White J. Kjar R. 《Electron Device Letters, IEEE》1995,16(2):61-63
The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process 相似文献
75.
76.
Yi-Min Wang Hua Lee Dipali V. Apte 《International journal of imaging systems and technology》1992,4(3):201-206
The matrix pencil (MP) method, based on the singular value decomposition (SVD), is applied to quantitative NMR spectroscopy. Its relationship to other SVD-based methods is also presented. Simulations and applications are given to demonstrate the capability of superior performance.©1993 John Wiley & Sons Inc 相似文献
77.
Air cleaning as a means of mitigating the risks arising from exposure to indoor radon progeny has been evaluated in a single-family house in the north eastem US. using an automated, semi-continuous activity-weighted size distribution measurement system. The measurements included radon concentration, condensation nuclei count, and activity-weighted size distribution of radon decay products. Measurements were made in the house with and without an operating air filtration system and with various particle sources common to normal indoor activities operating. Aerosols were generated by running water in a shower, candle burning, cigarette smoking, vacuuming, opening doors, and cooking. Using a room model, the changes in attachment rates, average attachment diameters, and deposition rates of the unattached fraction with and without the air cleaning system were calculated. In the presence of active aerosol sources, the air filtration unit typically reduced the concentration of particles within the hour following the end of particle generation. After candle burning, cigarette smoking, and vacuuming in the bedroom, the reductions of PAEC by air filtration are about 60% with the air filtration system operating in the bedroom. During cooking in the kitchen, the reductions of PAEC in the bedroom with the air filtration system were about 40%. However, for all cases the dose reductions were smaller than the particle and PAEC reductions. For those particles that were generated within the bedroom, there was a 20% to 50% reduction in dose. In the case of cooking where the door was open and particles infiltrated from the rest of the house, the dose reduction was only 5% on average and appears to be insignificant. Thus, the dose reductions were h e r than the reductions in activity concentration, but there were no cases where the estimated dose actually increased. 相似文献
78.
本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件,制备了优质非晶氮化硅薄膜,其介电常数为7.5、击穿强度为5.5MV/cm、电导率为10-13(Ωcm)-1。 相似文献
79.
提出了一种新的铝液夹杂物快速检测方法。导出了该法的检测原理方程。分析并试验研究了影响检测重复性和分辨率的因素。试验选择了较好的检测参数,并获得了较好的检测结果。 相似文献
80.
The authors reply to the comments by Koppelaar and Tolhuizen (see ibid. vol.46, no.9, p.573, 1998). They state that the optimum choice of the slopes used to perform the encoding process in a projection code always results in maximizing the minimum Hamming distance so that d=2 r 相似文献