Hierarchical production control for a flow shop with dynamic setup changes and random machine breakdowns

In this paper, we study a manufacturing system consisting of two machines separated by two intermediate buffers, and capable of producing two different products. Each product requires a constant processing time on each of the machines. Each machine requires a constant non-negligible setup change time from one product to the other. The demand rate for each product is considered to be piecewise constant. Each machine undergoes failure and repair. The time-to-failure and time-to-repair are exponentially distributed random variables. The setup change and processing operations are resumable. We model our system as a continuous time, continuous flow process. An optimal control problem is formulated for the system to minimize the total expected discounted cost over an infinite horizon. To determine the optimal control policy structure, a discrete version of the problem is solved numerically using a dynamic programming formulation with a piecewise linear penalty function. A real-time control algorithm is then developed with the objective of maintaining low work-in-process inventory and keeping the production close to the demand. The algorithm uses a hierarchical control structure to generate the loading times for each product on each machine in real time and to respond to random disruptions in the system. The system is simulated using this algorithm to study its performance. The performance of the algorithm is also compared to alternative policies.     

小方坯连铸机的PLC自动控制

本文对弧型小方坯连铸机工艺与设备进行了分析，介绍了连铸生产的ＰＬＣ控制系统。及其软件设计。     

工业汽轮机的清洗

本文介绍了用饱和蒸汽对冷凝式汽轮机进行清洗除垢时主要参数的确定、操作要点及清洗方案，清洗后的汽轮机运行正常。     

2-D dopant profiling in VLSI devices using dopant-selectiveetching: an atomic force microscopy study

We report a detailed mapping of a 2-D dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and Atomic Force Microscopy. The experimental results show excellent agreement with those obtained from SRP and SIMS as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this method     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process     

A fully distributed power control algorithm for cellular mobilesystems

Several distributed power control algorithms that can achieve carrier-to-interference ratio (CIR) balancing with probability one have been proposed previously for cellular mobile systems. In these algorithms, only local information is used to adjust transmitting power. However, a normalization procedure is required in each iteration to determine transmitting power and, thus, these algorithms are not fully distributed. In this paper, we present a distributed power control algorithm which does not need the normalization procedure. We show that the proposed algorithm can achieve CIR balancing with probability one. Moreover, numerical results reveal our proposed scheme performs better than the algorithm presented in Grandhi et al. [1994]. The excellent performance and the fully distributed property make our proposed algorithm a good choice for cellular mobile systems     

Substrate-connected high voltage pumping circuits for low supplyvoltages

Novel high voltage pumping circuits for low supply voltages are proposed. Utilising a small pumping circuit and the new substrate-connected techniques can enhance charge transfer efficiency and eliminate the body effect at low supply voltages. Furthermore, a diode-connected transistor technique can improve the reverse charge sharing phenomenon when the output has a load current. With this technique high boosted voltages can be obtained at low supply voltages