离子交换纤维微观形貌特点及结构修饰研究

利用比表面积测试仪、扫描电子显微镜等物理化学方法对颗粒与纤维状离子交换剂的链间交联与微观形貌进行了研究,通过刚性交联剂对聚丙烯-苯乙烯-二乙烯基苯(PP-ST-DVB)离子交换纤维骨架结构进行了修饰改造。结果表明:离子交换纤维由于不能通过交联剂与致孔剂参与下的单体聚合构建具有丰富微孔的高分子骨架,所以不存在丰富孔结构和高比表面积特征,其内部为连续凝胶相结构;外比表面积大、传质距离短、交联键分布均匀是其反应动力学和渗透压稳定性能优异的主要原因;刚性交联剂在PP-ST-DVB纤维上的附加交联反应使其比表面积从原来的0.5 m~2/g提高到200 m~2/g以上,附加交联反应所形成的分子尺度微孔孔径分布窄,具有超高交联树脂的结构特点。     

电力系统稳定性计算用励磁系统数学模型的完善

在已有电力系统稳定性计算用励磁系统数学模型(以下简称:励磁模型)的基础上,结合励磁系统的调研和参数测定工作,对励磁模型进行了4个方面的改进与完善;增加了并联PID控制;增加了PID控制的限幅环节;对原有晶闸管整流器模型进行了补充修订;对低励限制环节(UEL)的限制曲线设置进行了修改。     

High output impedance current-mode first-order allpass networks with four grounded components and two CCIIs

Eight current-mode first-order allpass networks using second-generation current conveyors (CCII) are presented. Each of the proposed circuits employs two CCIIs, two grounded capacitors and two grounded resistors. The networks offer high output impedances. Experimental results are also included.     

Amplifier linearization using compact microstrip resonant cell-theory and experiment

This paper presents a novel technique for reducing the intermodulation distortions (IMDs) in power amplifiers. In this method, both second- and third-harmonic components generated by the transistor are reflected back simultaneously by the compact microstrip resonant cell (CMRC) at the input port with proper phases to mix with the fundamental signal for the reduction of IMDs. A rigorous mathematical analysis on the effectiveness of multiharmonic reflections has been formulated and derived using the Volterra series. Moreover, the delay mismatch factor of the proposed method is analytically studied and the result shows that a better tolerance to the delay error can be achieved by using CMRC circuitry. Standard two-tone test measurements reveal 32- and 22-dB reductions for the third-order IMD and fifth-order IMD, respectively, without affecting the fundamental signal at 2.45 GHz. Meanwhile, the proposed approach gives a peak power added efficiency of 53% with 11.5 dB transducer gain and 15 dBm output power for a single-stage SiGe bipolar junction transistor. The adjacent channel power ratio (ACPR) is -55dBc for a data rate of 384-kb/s quadrature phase shift keyed modulated signal with 2-MHz spanning bandwidth, and this ACPR is maintained for a broad range of output power level.     

An improved quantum-inspired evolutionary algorithm for coding resource optimization based network coding multicast scheme

This paper investigates how to minimize the required coding resources in network-coding-based multicast scenarios. An evolutionary algorithm (MEQEA) is proposed to address the above problem. Based on quantum-inspired evolutionary algorithm (QEA), MEQEA introduces multi-granularity evolution mechanism which allows different chromosomes, at each generation, to have different rotation angle step values for update. In virtue of this mechanism, MEQEA significantly improves its capability of exploration and exploitation, since its optimization performance is no longer overly dependant upon the single rotation angle step scheme shared by all chromosomes. MEQEA also presents an adaptive quantum mutation operation which is able to prevent local search efficiently. Simulations are carried out over a number of network topologies. The results show that MEQEA outperforms other heuristic algorithms and is characterized by high success ratio, fast convergence, and excellent global-search capability.     

亚共晶Al-Cu系激光引燃自蔓延合金微观表征及性能研究

对亚共晶Al-Cu粉末压坯,通过不同功率进行激光引燃自蔓延烧结。用OM、SEM、XRD进行微观组织表征,并对烧结合金进行耐磨等性能测试。结果表明：烧结后物相由CuAlO2、Al4Cu9、Al2O3等构成,组织为树枝状晶和胞状晶相间分布。在激光输出功率为950W,烧结后密度最大,为2.8101g/cm3,致密性达到最高点,耐磨性最佳,相对失重为3.66%。     

Transient Charging and Discharging Behaviors of Border Traps in the Dual-Layer HfO2/SiO2 High- κ Gate Stack Observed by Using Low-Frequency Charge Pumping Method

Transient charging and discharging of border traps in the dual-layer HfO₂/SiO₂ high-kappa gate stack have been extensively studied by the low-frequency charge pumping method with various input pulse waveforms. It has been demonstrated that the exchange of charge carriers mainly occurs through the direct tunneling between the Si conduction band states and border traps in the HfO₂ high-kappa dielectric within the transient charging and discharging stages in one pulse cycle. Moreover, the transient charging and discharging behaviors could be observed in the time scale of 10^-8- 10^-4 s and well described by the charge trapping/detrapping model with dispersive capture/emission time constants used in static positive bias stress. Finally, the frequency and voltage dependencies of the border trap area density could also be transformed into the spatial and energetic distribution of border traps as a smoothed 3-D mesh profiling     

An Electroabsorption Modulator Monolithically Integrated with a Semiconductor Optical Amplifier and a Dual-Waveguide Spot-Size Converter

A semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a spot-size converter input and output is fabricated by means of selective area growth,quantum well intermixing,and asymmetric twin waveguide technology.A 1550～1600nm lossless operation with a high DC extinction ratio of 25dB and more than 10GHz 3dB bandwidth are successfully achieved.The output beam divergence angles of the device in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.     

锥形图形衬底上氮化镓薄膜生长和表征

GaN films are grown on cone-shaped patterned sapphire substrates(CPSSs)by metal-organic chemical vapor deposition,and the influence of the temperature during the middle stage of GaN growth on the threading dislocation(TD)density of GaN is investigated.High-resolution X-ray diffraction(XRD)and cathodeluminescence(CL)wereusedtocharacterizetheGaNfilms.TheXRDresultsshowedthattheedge-typedislocation density of GaN grown on CPSS is remarkably reduced compared to that of GaN grown on conventional sapphire substrates(CSSs).Furthermore,whenthegrowthtemperatureinthemiddlestageofGaNgrownonCPSSdecreases,the full width at half maximum of the asymmetry(102)plane of GaN is reduced.This reduction is attributed to the enhancement of vertical growth in the middle stage with a more triangular-like shape and the bending of TDs.The CL intensity spatial mapping results also showed the superior optical properties of GaN grown on CPSS to those of GaN on CSS,and that the density of dark spots of GaN grown on CPSS induced by nonradiative recombination is reduced when the growth temperature in the middle stage decreases.