Web-based systems design: a study of contemporary practices and an explanatory framework based on “method-in-action”

This paper reports the findings of a detailed study of Web-based systems design (WBSD) practices in Ireland based on data collected over a 3-year period (2002–2005), the objectives of which were to (1) contribute towards a richer understanding of the current “real-world” context of WBSD by characterising the profile of a typical project (team size, timeframe, nature of requirements, etc.) and identifying the key challenges, constraints, and imperatives (i.e. “mediating factors”) faced by Web-based system designers, and (2) understand how those contextual parameters and mediating factors influence the activity of WBSD as regards the selection and enactment of whatever design practices are therefore engaged (i.e. the use of methods, procedures, etc.). Data was gathered through a survey which yielded 165 usable responses, and later through a series of semi-structured qualitative interviews. Using grounded theory, an explanatory conceptual framework is derived, based on an extension of the “method-in-action” model, the application of which to WBSD has not been previously investigated in depth. It is proposed that this framework of WBSD issues is valuable in a number of ways to educators, researchers, practitioners, and method engineers.     

火电厂实施废水零排放的可行性探讨

对合肥发电厂的用排水现状进行了介绍，并提出了实施废水零排放的可行性方案。     

Dynamic Bending Strains in Planar Trusses with Pinned or Rigid Joints

The method of reverberation ray matrix is applied to analyze the dynamic behavior of structural members in trusses with pinned joints subjected to suddenly applied force. The results are compared with those in planar trusses with rigid joints. Detailed calculations are made with two types of trusses, a small laboratory model made of slender aluminum bars, and a hypothetical real size Pratt truss made of structural steel. It is found that the maximum dynamic bending strains in the members of both types of trusses are very large, comparable with the dynamic axial strains in the same member. The magnitudes of bending strains in the pinned truss differs little from those in the truss with rigid joints for both types of trusses. Such a large dynamic bending strain in a structure member, which is contradictory to the static behavior of the same truss, could be caused by the inertial force of the mass in structural members of the truss.     

Low cycle fatigue and creep behavior of recrystallized Molybdenum near room termperature

The deformation behavior of pure recrystallized molybdenum under cyclic and static loads was investigated in the temperature range between 30°C and 10O°C, for stress amplitudes between 100 MPa and 250 MPa and for static loads up to 200 MPa. The results show that in spite of the low test temperatures and stress levels the Mo material exhibits considerable plastic strains which depend sensitively on frequenez and small changes in temperature.The activation energy deduced for the static and dynamic deformation is less than 0.98 eV which indicates thermally activated processes, to be explained by a dislocation kink model as described in the literature. The low-temperature fatigue behavior appears strongly influenced by creep-fatigue interaction phenomena.     

Observation of atomic steps on CaCO3 crystal surface

By using scanning polarization force microscopy,the deliquescence process and the atomic steps on the cleavage surface of CaCO3 in air were studied in situ.Under an exposure to medium umidity(-57%),the sloiw step movement has been observed.     

小方坯连铸机的PLC自动控制

本文对弧型小方坯连铸机工艺与设备进行了分析，介绍了连铸生产的ＰＬＣ控制系统。及其软件设计。     

Si/SiGe epitaxial-base transistors. I. Materials, physics, andcircuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented