Stabilization of the Single-Chain Fragment Variable by an Interdomain Disulfide Bond and Its Effect on Antibody Affinity

The interdomain instability of single-chain fragment variable (scFv) might result in intermolecular aggregation and loss of function. In the present study, we stabilized H4—an anti-aflatoxin B₁ (AFB₁) scFv—with an interdomain disulfide bond and studied the effect of the disulfide bond on antibody affinity. With homology modeling and molecular docking, we designed a scFv containing an interdomain disulfide bond between the residues H44 and L100. The stability of scFv (H4) increased from a GdnHCl₅₀ of 2.4 M to 4.2 M after addition of the H44-L100 disulfide bond. Size exclusion chromatography revealed that the scFv (H44-L100) mutant existed primarily as a monomer, and no aggregates were detected. An affinity assay indicated that scFv (H4) and the scFv (H44-L100) mutant had similar IC₅₀ values and affinity to AFB₁. Our results indicate that interdomain disulfide bonds could stabilize scFv without affecting affinity.     

新型流化床在尿素8·13工程中的应用

在尿素 8·13工程技改方案中 ,成功采用新型流化床技术 ,解决造粒后瓶颈 ,提高产品质量及市场竞争力 ,效果良好     

Stress-assisted crystallisation in anodic titania

The relationship between the microstructural and internal stress evolution during Ti anodising is discussed. Samples anodised galvanostatically to 12 V and 40 V, corresponding to different stages of the internal stress evolution, were examined by in-plane and cross-section transmission electron microscopy. Electron diffraction patterns have been complemented with stoichiometry data obtained from energy loss near edge structure spectra. The sample anodised to 40 V was observed to consist of two regions, with a crystallised inner region adjacent to the metal/oxide interface. Crystallisation of this region is associated with the presence of large compressive internal stresses which build up during anodising up to 12 V.     

Microstructure and mechanical properties of soy protein/agar blend films: Effect of composition and processing methods

The present work prepared a series of soy protein isolate/agar blend films containing 33% glycerol as plasticizer by solution casting and thermo-molding methods. The microstructure and mechanical properties of the blend films were evaluated in relation to the agar/protein ratio as well as the processing methods. Experimental results revealed that hydrogen bonding interactions existed between soy protein and agar. The casting films possessed more homogeneous interfaces compared with the molding films, leading to the superior mechanical properties than those molding films. Owing to the rigid three-dimensional network formed by the agar, the tensile strength of casting blend films was enhanced. With the increase of agar in the casting blend films, the crosslinking density increased and was responsible for the variations in tensile strength.     

物理气相沉积中等离子体参数表征的研究进展

物理气相沉积作为制备表面防护薄膜的重要方法,一直是表面薄膜领域研究重点,而物理气相沉积中等离子体作为直接影响薄膜性能的关键因素,其参数的表征对优化沉积工艺和提高薄膜性能具有重要指导意义.概述了常用物理气相沉积方法及其发展,包括电弧离子镀、磁控溅射和电弧磁控复合技术的原理及发展历程.归纳了目前生产中常用的等离子体参数表征方法——Langmuir探针法、汤姆逊散射法、微波干涉法和发射光谱法,阐明了这些表征方法诊断等离子体参数的原理,分析了不同表征方法的优缺点和存在的主要问题,并对常用物理气相沉积中等离子体参数表征相关研究的发展和现状作了综合论述和总结,分别整理了电弧离子镀和磁控溅射中等离子体参数诊断的发展历程和近期研究.两种物理气相沉积方法最常用的等离子体参数表征方法都是Langmuir探针法和发射光谱法,早期的研究侧重于探索等离子体瞬态参数和薄膜结构性能的关系.随着现代技术的进步,早期诊断方法不断与新技术融合,研究方向也逐渐偏向于研究等离子体参数的时间变化和优化薄膜工艺、性能评价方法.最后分析了当前物理气相沉积中等离子体参数表征存在的问题和不足,展望了等离子体参数未来的研究趋势.     

预变形对Al-Zn-Mg铝合金组织及力学性能的影响

系统研究了预变形温度对Al-Zn-Mg铝合金微观组织结构及力学性能的影响。运用光学显微镜和透射电镜观察了微观组织,扫描电镜表征了拉伸断口形貌,X射线衍射仪测试了宏观织构构成,万能拉伸试验机测试了力学性能。结果表明,在400 ℃的热轧温度下,力学性能指标最佳,屈服强度和抗拉强度分别达到325 MPa和455 MPa,伸长率达到14%。不同热轧温度下的拉伸试样断口均呈现为韧性断裂,断口处均存在数量和尺寸不一的韧窝。400 ℃热轧变形温度下,晶粒内部的位错缠结消失,形成了晶界附近规则排列的位错墙;450 ℃时,晶内的位错消失,主要为再结晶晶粒。在350 ℃和400 ℃热轧变形温度下,织构中存在明显的剪切织构,包括旋转立方织构{001}<110>和黄铜R织构{111}<112>和{111}<110>。450 ℃热轧变形温度下,出现明显的再结晶织构Cube_ND {001}<310>。     

脉冲处理对Al-6Zn-3Mg-2Cu合金铸轧板组织及性能的影响

研究了常规铸轧过程中施加20、50和150Hz频率,电流强度为400A的脉冲电流对Al-6Zn-3Mg-2Cu合金铸轧板的组织及力学性能的影响。结果表明,经20Hz的脉冲电流处理后,Al-Zn-Mg-Cu合金铸轧板偏析情况大为改善,微观组织显著细化;150Hz脉冲电流对铸轧板的组织影响不大;铝合金中τ相广泛分布,呈网状或岛状;同时,经20Hz脉冲电流处理的铸轧板抗拉强度可达320MPa,是常规铸轧板强度的1.3倍;样品具有脆性断裂特征,脉冲处理后韧性有所提高。     

雪崩击穿条件下4.5kV IGBT器件的背面优化研究

The static avalanche breakdown behavior of 4.5 kV high-voltage IGBT is studied by theory analysis and experiment. The avalanche breakdown behaviors of the 4.5 kV IGBTs with different backside structures are investigated and compared by using the curve tracer. The results show that the snap back behavior of the breakdown waveform is related to the bipolar PNP gain, which leads to the deterioration of the breakdown voltage. There are two ways to optimize the backside structure, one is increasing the implant dose of the N C buffer layer, the other is decreasing the implant dose of the P C collector layer. It is found that the optimized structure is effective in suppressing the snap back behavior and improving the breakdown characteristic of high voltage IGBT.     

4500V SPT IGBT 动静态损耗优化

本文关注高压IGBT动静态性能的优化。对4500V增强型平面IGBT进行研究,该结构在阴极一侧具有载流子存储层。其中垂直结构采用软穿通(SPT)结构,顶部结构采用增强型平面结构,该结构被称为SPT IGBT,仿真结果显示4500V SPT 具有软关断波形,与SPT结构相比提升了导通压降和关断损耗之间的折衷关系。同时,对不同载流子存储层掺杂浓度对动静态性能的影响也进行了研究,以此来优化SPT IGBT的动静态损耗。