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The effect of Li2O on the crystallization properties of CaO-Al2O3-SiO2-Li2O-Ce2O3 slags was investigated. With increasing the Li2O content, LiAlO2 and CaCeAlO4 were the main crystalline phases. LiAlO2 formed for the charge compensating of Li+ ions to [AlO45?]-tetrahedrons, and CaCeAlO4 formed as a result of the charge balance of Ce3+ ions, Ca2+ ions, and [AlO69?]-octahedrons. Increasing the content of Li2O to 10%, the crystallization temperature was the highest, and the incubation time was the shortest. The crystallization ability was strong due to the three factors of strengthening the interaction between ions and ion groups, decreasing the polymerization degree, and increasing the melting temperature. Further increasing the content of Li2O, the crystallization performance was obviously suppressed, because the melting temperature and the force between the cations and the anion groups decreased. 相似文献
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Journal of Computer Science and Technology - DOACROSS loops are significant parts in many important scientific and engineering applications, which are generally exploited pipeline/wave-front... 相似文献
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Scientometrics - Due to the development of academic, more and more attentions are paid to citation recommendation. To solve the citation recommendation problem, researchers begin to focus on the... 相似文献
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Wei-Li Xie Xiao-Dong Zhang Wen-Hui Liu Qi Xie Guang-Wu Wen Xiao-Xiao Huang Jian-Dong Zhu Fei-Xiang Ma 《稀有金属(英文版)》2019,(3)
SiC nano wires were fabricated on the silicon substrate dipped with a layer of Ni catalyst at 900 ℃ by gas pressure annealing processing. The morphologies and crystal structures were determined by scanning electron microscopy(SEM), transmission electron microscopy(TEM)and X-ray diffraction(XRD). The results show that the assynthesized nanowires are β-SiC single crystalline with diameter range of 50-100 nm, and length of tens of micron by directly annealing at 900 ℃. The SiC nano wires grow along the [111] direction with highly uniform morphology. And the possible growth mechanism of SiC nano wires is proposed.The present work provides an efficient strategy for the production of high-quality SiC nano wires. 相似文献
60.
Qiang Liu Xinyu Mao Xiaoying Li Penghui Chen Xin Liu Ziyu Liu Danyang Zhu Haohong Chen Tengfei Xie Jiang Li 《Journal of the American Ceramic Society》2021,104(10):4927-4931
0.5 at.% Cr:ZnGa2O4 precursor was synthesized by the co-precipitation method with nitrates as raw materials, using ammonium carbonate as the precipitant. Low-agglomerated Cr:ZnGa2O4 powders with an average particle size of 43 nm were obtained by calcining the precursor at 900℃ for 4 h. Using the powders as starting materials, 0.5 at.% Cr:ZnGa2O4 ceramics with an average grain size of about 515 nm were prepared by presintering at 1150℃ for 5 h in air and HIP post-treatment at 1100℃ for 3 h under 200 MPa Ar. The in-line transmittance of 0.5 at.% Cr:ZnGa2O4 ceramics with a thickness of 1.3 mm reaches 59.5% at the wavelength of 700 nm. The Cr:ZnGa2O4 ceramics can be effectively excited by visible light and produce persistent luminescence at 700 nm. For Cr:ZnGa2O4 transparent ceramics, the brightness of afterglow was larger than 0.32 mcd/m2 after 30 min, which is far superior to that of Cr:ZnGa2O4 persistent luminescence powders. 相似文献