Fine-line conductor manufacturing using drop-on demand PZT printingtechnology

An emerging selective metallization process to fabricate fine-line conductors based on drop-on-demand (DOD) ink jet printing and novel nano-particle fluid suspensions (NPFS) was studied. The suspensions consist of 1-10 nm silver or gold particulates that are homogeneously suspended in an organic carrier. A piezo-electric droplet generator driven by a bipolar voltage signal is used to dispense 50-70 μm diameter droplets traveling at 1-3 m/s before impacting a compliant polyimide substrate. The deposit/substrate composite is subsequently processed at 300°C for 15 min to allow for complete evaporation of the carrier and for sintering of the nano-particles, thereby yielding a finished circuit interconnect. Test vehicles created using this technique exhibit features as fine as 120 μm wide and 1 μm thick with resistivities on the order of 3.5×10^-5 Ωcm. The circuitry performed well under environmental conditioning. As expected, repeatability of circuitry fabrication showed sensitivity to the generation of steady, satellite-free droplets. In an effort to generate droplets consistently, it is essential to develop a strong fundamental understanding of the correlation between device excitation parameters and dispensed fluid properties, and to resolve the microrheological behavior of the NPFS when flowing through the droplet generator     

Shrinkage and splitting of microcracks under pressure simulated by the finite-element method

The two-dimensional finite-element method is applied to analyze the shrinkage and splitting of microcracks regularly arranged on or perpendicular to a grain boundary under pressure. Grain-boundary and surface diffusions are coupled by the boundary conditions at the triple point of the microcrack surface and the grain boundary. The shrinkage and splitting processes for the two kinds of microcracks are revealed by detailed finite-element analyses. For the microcrack lying on a grain boundary, it first shrinks to a small void shape, then the void is split by the grain boundary and the two split voids assume a cylindrical shape under the capillary force of the surface. For the microcrack perpendicular to the grain boundary, it is split into two segments by the grain boundary during the early stage of shrinkage. Then, the split microcracks stop shrinking and evolve into two cylindrical channels with a circular section by the capillary force of the surface. These evolution processes are controlled by the applied pressure, microcrack spacing, ratio of grain-boundary diffusion to surface diffusion, and equilibrium dihedral angle, defined by surface and grain-boundary tensions. The influences of these controlled parameters on the evolution processes are numerically clarified based on a great number of finite-element analyses.     

Ceramers: Hybrid materials incorporating polymeric/oligomeric species with inorganic glasses by a sol-gel process

A sol-gel process has been successfully utilized to produce hybrid materials incorporating polymeric/oligomeric components of polydimethyl siloxane(PDMS) with silicon glasses. All the samples made were transparent and flexible. Dynamic mechanical studies indicate that a portion of the siloxane species is phase-separated while the remainder is well dispersed. The effect of acid content were proven to be significant on the dispersion of the siloxane components and on the structure and properties of final products.     

On-line learning delivery decision support system for highlyproduct mixed semiconductor foundry

A production learning system (PLS) based on the tool model was constructed as a decision support and real-time information update system to forecast the cycle time. A tool model includes a waiting model and a processing model. Each of the waiting and processing models uses a backpropagation neural network to establish the relationship between the input and output (time) of the model. Hence, cycle time estimation, tool group move and confirm line item performance (CLIP) value can be obtained based on the memory stored in the neural network. The result shows that the forecasting ability of the PLS has an error rate below 8% on average     

Internet网络延时分析

本文对Internet网络延迟进行了较为全面的分析，介绍了几种减少网络延迟的技术。然后提出一种新的方法，并用排队论加以分析。     

Efficient design/simulation algorithms for simultaneous switching noise in leadframe packages

 Two new modeling and simulation approaches for Simultaneous Switching Noise (SSN) are described and compared to “brute force” simulation by SPICE. Both simulation accuracy and simulation run-time are considered. The two new approaches are: 1) the “effective inductance” method, in which an approximate, very efficient method of extracting an SSN L _eff  is utilized; and 2) the “macromodel” method, in which the complex inductance network responsible for SSN is represented by only a few dominant poles in the frequency domain and the time domain response is obtained by an efficient convolution algorithm. Both approaches are shown to be accurate and fast, but only the effective inductance algorithm is robust in numerical convergence. Received: 19 March 1997 / Accepted: 25 March 1997     

盛钢桶铝锆碳滑板的研究与生产

通过研究,在盛钢桶用铝锆碳滑板的生产过程中,调整了ZrO2的加入量,添加了复合抗氧化剂,使滑板具用较高的强度和抗氧化性能,提高了滑板的使用寿命.     

Characterization of Al-doped n-type ZnSe prepared under a zinc-rich growth condition by low-pressure organometallic chemical vapor deposition

High conductivity n-type ZnSe with = 0.01 ωcm and n = 2.4 × 10¹⁸ cm⁻³ is obtained on (100) GaAs substrates by low pressure organometallic chemical vapor deposition. The 14 meV full width at half maximum of the 77 K photoluminescence near-band-edge emission shows a high quality of as-grown Al-doped ZnSe epilayers. With a suitable Al doping level, a strong photoluminescence intensity of near-band-edge emission is obtained. The behavior of near-band-edge emission and of self-activated emission related to the incorporation of aluminum are discussed in this paper.     

The dominance of the K I-field for a crack under stress wave loading

The extent of the dominant singular field is investigated for a finite crack under stress wave loading. Using a boundary integral equation method the complete solution as well as the near field solution is determined. A comparison of the two fields indicates that the singular field dominates within a small domain at the crack tip. The size of the dominance region in the dynamic case may be very different from that in the static case.     

Mechanism analysis of gate-induced drain leakage in off-state n-MOSFET

An analytical expression for both band-to-band and band-trap-band indirect tunnelings is used to study the gate-induced drain leakage (GIDL) current of MOSFETs measured before and after hot-carrier stress. The voltage and temperature dependence of GIDL are characterized. Both results show that interface traps situated near the midgap participate in the conduction of GIDL, and band-trap-band indirect tunneling could be the major mechanism. This is further supported by the fact that the percentage increase in GIDL induced by hot-carrier stress is about the same as the corresponding increase in interface-trap density. On the other hand, under low-field conditions, trap-assisted Poole–Frenkle emission dominates over tunneling for temperatures even well below room temperature.