STRESS CONTROLLED FERROELECTRIC (BA0.5Sr0.5)TiO3 THIN FILMS PREPARED ON GD2O3/SRTiO3(001) BY A PULSED LASER DEPOSITION

ABSTRACT

Stress controlled epitaxial ferroelectric Ba_0.5Sr_0.5TiO₃ (BST) films have been deposited on Gd₂O₃/SrTiO₃ by pulsed laser deposition with oxygen background pressure of 200 mTorr at the deposition temperature of 750°C. In order to control the stress in BST films, oxygen pressures for Gd₂O₃ buffer layers have been varied from 0.1 to 100 mTorr, while that of BST films have been fixed at 200 mTorr. It has been found that the lattice parameters of the BST films deposited on Gd₂O₃ were changed. Furthermore, microwave properties of co-planar waveguide (CPW) fabricated on BST films were investigated by a HP 8510C vector network analyzer from 1–20 GHz. Large dielectric tunabilities were observed from the CPW's fabricated on BST films deposited on Gd₂O₃ layers deposited at low and high oxygen pressures, 0.1 and 100 mTorr, respectively.     

FABRICATION AND ELECTRICAL PROPERTIES OF PZT-PVDF 0–3 TYPE COMPOSITE FILM

ABSTRACT

A film speaker was fabricated with 0–3 type piezoelectric composite. The 0–3 type composite was developed to incorporate the advantages of both ceramic and polymer. The pastes of PZT-PVDF composite were made with various mixing ratio. The paste was printed by conventional screen-printing method on ITO (Indium Tin Oxide) bottom electrode which was deposited on PET (polyethylene terephthalate) polymer film. The prepared composite film was about 80 μm in thickness. After printing the top-electrode of silver-paste, 4 kV/mm of DC field was applied at 120°C for an hour to align the electric dipole in the 0–3 composite film. The piezoelectric charge constant of d₃₃ was increased with increasing the PZT weight percent. The maximum value was 24 pC/N at 70 wt% of PZT. But the piezoelectric voltage constant of g₃₃ had the maximum value about 32 mV · m/N at 65 wt% of PZT. The SPL (Sound Pressure Level) of the speaker fabricated with the 65:35 composite film was tested at various driving voltages of 1 ～ 100V_rms. The SPL was saturated at the driving voltage of 70V_rms and the value was about 68 dB at 1 kHz.     

Investigation on Resistive Memory Switching Mechanism of NiO

ABSTRACT

Experimental investigations on the resistive memory switching in sub-micron sized NiO memory cell are presented to elucidate the resistive memory switching mechanism. The voltage or current-biased I-V measurements show that the resistive switching transitions can be regarded as the combination of a voltage-controlled negative differential resistance phenomenon and a current-controlled negative differential resistance phenomenon. Along with experimental observations of multiple resistance states, these indicate that the memory switching in NiO would come from the percolative formation and rupture of filamentary conducting paths. Pulse experiments further suggest that the memory switching would come from local domains inside filaments.     

IN SITU X-RAY PROBES FOR PIEZOELECTRICITY IN EPITAXIAL FERROELECTRIC CAPACITORS

ABSTRACT

Probing the piezoelectricity and ferroelectricity of thin film devices and nanostructures quantitatively has proven to be challenging because the appropriate experimental tools have had a limited range of usefulness. We show here that the piezoelectric and ferroelectric properties of epitaxial thin films can be measured quantitatively using time-resolved synchrotron x-ray microdiffraction. Microdiffraction combines structural specificity with the appropriate spatial resolution and ability to probe structures with electrical contacts. Our measurements of piezoelectric coefficients and coercive electric fields for Pb(Zr,Ti)O₃ capacitors using this approach are in excellent quantitative agreement with results obtained electrically and mechanically. The time and spatial resolution of microdiffraction probes are well-defined and decoupled from electrical and mechanical resonances of the ferroelectric capacitor.     

水热法制备PEMFC用Pt/CNT电催化剂

首次使用水热法制备用于质子交换膜燃料电池(PEMFC)的Pt/CNT。首先使用HNO3-H2O2体系对纳米碳管(CNT)进行预处理并用红外线(IR)光谱进行表征,结果表明,预处理过程打开了CNT端口并去除了大量杂质。在水热法实验中,反应温度和时间是决定铂颗粒大小的重要因素。样品的X射线衍射仪(XRD)和透射电子显微镜法(TEM)分析表明:最优的反应条件是在140℃反应1.5h,此时铂颗粒的平均尺寸小于1.94nm,并且有着狭窄的粒径分布;催化剂中Pt的质量百分含量为40%。该水热法使用常规试剂H2PtCl6·2H2O和HCHO溶液,操作简单,是一个制备Pt/CNT催化剂较好的方法。     

有限元法与田口方法相结合模拟研究交联聚乙烯电缆绝缘中的水树现象

聚合物中水树的引发与生长不仅与多个内部、外部参数有直接的关系,还与这些参数之间的协同作用有关。在研究水树生长的过程中,采用统计方法是非常必要的,这些统计方法首先要包括可靠的重要变量,还要能够对大量的试验结果进行合理的解释。运用田口方法和有限元法相结合的模拟方法可以在短时间内找到诱发水树的原因,还可以表征水树的危险性并采取适当的方法加以抑制其生长。数值分析及水树培养试验结果显示,水树内部的介电常数及介电常数分布是影响水树诱发的主要原因,而水树本身的几何尺寸的作用则相对次要。     

γ辐照交联聚乙烯绝缘电缆水树行为的研究

核电站的控制系统等需要大量的电线电缆,这些电缆的耐辐射性能至关重要。高能辐射对固态聚合物有多种作用,包括引发交联以及链裂解等。水树是影响交联聚乙烯电缆,特别是中低压电缆使用寿命的重要因素。本文研究了γ辐射对交联聚乙烯电缆绝缘水树行为的影响。结果显示,在0~3000 kGy辐照剂量之内,水树的长度与密度随着辐照剂量的增加而增加。     

Web of Cell体系——适应未来智能电网发展的新理念

针对未来大量分布式发电并网需求,以智能电网为背景阐释了一种全新的电力系统控制体系——Web of Cell体系。首先,诠释该体系的概念并总结归纳出其特点,通过对比Web of Cell体系与集中控制体系及Cell与微电网和主动配电网间的差异,剖析了该体系在未来电力系统中的优势和可行性。随后,对该体系调压调频的控制结构和运行方式进行了分析并指出应重点关注的技术问题。最后,对该体系的进一步发展和研究方向进行了展望,以期为中国电网智能化发展提供参考和借鉴。