无铅焊料用水基无卤无VOC助焊剂

采用无卤素有机酸和有机胺作为活化剂,以去离子水为溶剂,并添加非离子表面活性剂,通过铺展率实验对各主要成分及配比进行选择和优化设计,研究了一种无铅焊料用水基无卤无VOC助焊剂。依据电子行业标准对研制的助焊剂进行了性能测试。结果表明,制备的助焊剂不含卤素、VOC物质,对无铅焊料的润湿性强,焊点光亮饱满,焊后残留少,铺展率可达78.2%,适用于SnAgCu和SnCu无铅焊料的波峰焊。     

STM32技术下单片机的通信技术实验系统设计与实现

文章在STM32单片机的基础上,明晰通信技术实验系统的开发原则与功能模块分布,此系统以核心板+功能模块为设计核心,将STM32F103ZET6单片机最小系统设定为系统控制中心,并依次完成电源、输入输出、有线通信、无线通信以及信源编码译码等模块规划,确保STM32单片机仿真与下载实验的有效性.最终实验结论表明,此系统...     

可写式胆甾相液晶显示和检测图像用算法的研究

研究了可写式胆甾相液晶显示(ChLCD)以及检测图像用的算法.我们可以用任何一个硬尖状物体(如指尖),直接在ChLCD表面上写入图像.通过测量测试盒(12mm×15mm/1×1)像素的电容,能够检测到F-状态和P-状态.但是测量4.1in ChLCD(241μm × 241μm/320 × 320)的电容时,却未能够检测到F-状态和P-状态,这主要是由于寄生电容的影响.最后,为了检测到ChLCD上的图像,研究了高频率测量方法和算法.     

AlInGaN量子阱垒层材料的优化

采用k·p方法理论,考虑了极化电场和自由载流子重新分布等因素,通过薛定谔方程和泊松方程自洽求解得到InGaN/AlInGaN,InGaN/GaN,InGaN/InGaN,InGaN/AlGaN量子阱导带和价带的能带结构,并由此计算了不同量子阱结构的自发发射谱.分析对比发现AlInGaN材料特有的自发极化和压电极化效应在阱垒界面处形成的极化电荷对量子阱发光特性有重要的影响.以AlInGaN为垒,优化其中各元素的组分可以减小极化电场的影响,提高量子阱自发发射谱强度.同时,综合考虑了极化电荷和势垒高度的影响,提出了具体的优化方法,并给予了物理解释.     

复杂场景下的自动红外舰船目标检测

为实现多种复杂海天背景下红外舰船目标的有效检测,提出了一种基于局部边缘梯度特征分析的舰船目标检测方法。利用红外舰船目标图像的特征,改进自适应 Butterworth 高通滤波对图像进行预处理。通过计算局部边缘梯度特征和聚类分析确定初始目标区域,比较梯度特征参数并进行多尺度搜索准确检测出舰船目标。对多种复杂海天场景红外图像进行仿真实验,结果表明,该算法能够有效准确地检测出多种复杂海天场景下的红外舰船目标,且算法简单,易于实现,适应面广。     

Near white light emission from GaN based light emitting diode with GaN/AlGaN distributed Bragg reflector

A near white GaN-based multiple quantum well (MQW) light emitting diode (LED) was grown by metal–organic chemical vapor deposition on top of a 20-period GaN/Al_zGa_1?zN distributed Bragg reflector (DBR). Photoluminescence, electroluminescence and high resolution X-ray diffraction were performed to analyze the sample characteristics. The results show that the introduction of the DBR increases the ratio of the green to blue light intensities. Near white light emission with commission international de l’Eclairage color coordinates x=0.18, y=0.28 was achieved at injection current 20 mA for the sample with DBR.     

大芯径光纤基模功率传输特性与折射率分布形式关系的研究

研究和分析了光纤芯区径向折射率分布对大芯径光纤基模的功率传输特性(主要包括最大功率密度和等效模面积这两个参数)的影响。采用一种可适用于多种光纤实际折射率分布的独特数学表达式,研究了折射率分布形状变化时大芯径光纤基模在横截面内功率密度分布与等效模面积的变化,并将结果与阶跃型折射率光纤进行对比。计算结果表明,在传输功率相同、光纤基模与高阶模等效折射率差大于10-4的前提下,折射率在芯区中心有一定凹陷的分布可以有效降低横截面内基模功率密度的最大值,增大基模的等效模面积。这一研究为设计和制作可以传输更大功率的大芯径的无源和有源单模光纤提供了理论基础。     

Amplified spontaneous emission spectrum and gain characteristic of a two-electrode semiconductor optical amplifier

A two-electrode multi-quantum-well semiconductor optical amplifier is designed and fabricated.The amplified spontaneous emission(ASE)spectrum and gain were measured and analyzed.It is shown that the ASE spectrum and gain characteristic are greatly influenced by the distribution of the injection current density.By changing the injection current density of two electrodes,the full width at half maximum,peak wavelength,peak power of the ASE spectrum and the gain characteristic can be easily controlled.     

Algorithms to Minimize Data Transfer for Code Update on Wireless Sensor Network

In Wireless Sensor Networks, the preloaded program code and data on sensor nodes often need to be updated due to changes in user requirements and environmental conditions. Sensor nodes are severely restricted by energy constraints. It is especially energy consuming for sensor nodes to transfer data through wireless radios. To efficiently reprogram sensor nodes through radio, we propose an algorithm, Minimum Data transferred by Copying and Downloading (MDCD) and its extension E-MDCD, to minimize the number of bytes needed to be transferred from the host machine to the sensor nodes. Experimental results show that the E-MDCD algorithm reduces the number of bytes transferred by 93.25 % for small code change compared with the Rsync based algorithm. In average, E-MDCD can reduce 59.82 % compared with the existing the Rsync based algorithm and 16.14 % compared with the Vdelta algorithm.     

高剂量离子注入直接形成Ge纳米晶的物理机理

研究了单束双能高剂量Ge离子注入、不经过退火在非晶态SiO2薄膜中直接形成镶嵌结构Ge纳米晶的物理机制．实验中利用不加磁分析器的离子注入机，采用Ge弧光放电离化自动形成的Ge+和Ge2+双电荷离子并存的单束双能离子注入方法，制备了1e16～1e18cm－2多种剂量Ge离子注入的Si基SiO2薄膜样品．用GIXRD表征了Ge纳米晶的存在，并仔细分析得到了纳米晶形成的阈值剂量．通过TEM分析了Ge纳米晶的深度分布和晶粒尺寸．用SRIM程序分别计算了双能离子在SiO2非晶层的射程和深度分布，与实验结合，得到纳米晶形成的物理机制，即纳米晶的形成与单束双能离子注入时Ge＋和Ge2＋相互碰撞产生的能量沉积在SiO2中形成的局域高温有关．