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11.
部分种子成分的特征X射线在等效生物材料中衰减的测定 总被引:6,自引:5,他引:1
用Si(Li)探测器实现了Na、Mg、S、Cl的特征X射线在有机膜中的相对衰减以及与O、K元素的特征X射线能量相当的X射线或轫致辐射在有机膜中的相对衰减,分别得出了它们减的数学描述,并把实验得到不同能量的X射线在有机膜中的质量吸收系数与Berkeley的OCG软件计算出的结果相比,相关都小于30%。 相似文献
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本文讨论了用辉光放电法制备氮化硅薄膜时衬底温度、射频功率和气体流量比对薄膜的电导率、介电常数和击穿强度的影响。通过优化生长条件,制备了优质非晶氮化硅薄膜,其介电常数为7.5、击穿强度为5.5MV/cm、电导率为10-13(Ωcm)-1。 相似文献
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2,3,4- or 2,3,5-trisubstituted furans were highly regioselectively formed from the cycloisomerization reaction of the same starting cyclopropenes 1 via the subtle choice of the transition metal halides. Under the catalysis of 5 mol % PdCl2(CH3CN)2, 2,3,5-trisubstituted furans 2 were given in 50-88% yields with 95-99% regioselectivities, while 2,3,4-trisubstituted furans 3 were formed in 78-96% yields with 99% regioselectivities under the catalysis of 5 mol % CuI. 相似文献
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An extended analysis of ground impedance measurement using the fall-of-potential method will be presented. An interesting curve that represents the exact locations of the potential probe when the potential and current probes are in different directions is obtained for the first time. Curves representing measurement error are also presented for the case when the potential probe is placed in locations where the correct ground impedance cannot be measured. A similar analysis for ground impedance measurements in multilayer soils is also discussed. The study presented in this paper has extended the theory of the conventional fall-of-potential method and the results obtained can serve as a practical guide for ground impedance measurements made using this method. 相似文献
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Ma Z.J. Chen J.C. Liu Z.H. Krick J.T. Cheng Y.C. Hu C. Ko P.K. 《Electron Device Letters, IEEE》1994,15(3):109-111
It has been reported that high-temperature (~1100°C) N2 O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N2O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO2 interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO2 interface is essential to effectively prevent boron diffusing into the underlying silicon substrate 相似文献
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In order to meet increasingly stringent discharge standards, new applications and control strategies for the sustainable removal of nitrogen from wastewater have to be implemented. In the past years, numerous studies have been carried out dealing with the application of fuzzy logic to improve the control of the activated sludge process. In this paper, fuzzy control strategies of predenitrification systems are presented that could lead to better effluent quality and, in parallel, to a reduction of chemicals consumption. Extensive experimental investigations on lab scale plant studies have shown that there was excellent correlation between nitrate concentration and ORP value at the end of the anoxic zone. Results indicated that ORP could be used as an on-line fuzzy control parameter of nitrate recirculation and external carbon addition. The optimal value of ORP to control nitrate recirculation and external carbon addition was - 86 +/- 2 mV and - 90 +/- 2 mV, respectively. The results obtained with real wastewater also showed the good performance and stability of the fuzzy controllers independently from external disturbances. The integrated control structure of nitrate recirculation and external carbon addition in the predenitrification system is also presented. 相似文献