WWTP dynamic disturbance modelling--an essential module for long-term benchmarking development.

Intensive use of the benchmark simulation model No. 1 (BSM1), a protocol for objective comparison of the effectiveness of control strategies in biological nitrogen removal activated sludge plants, has also revealed a number of limitations. Preliminary definitions of the long-term benchmark simulation model No. 1 (BSM1_LT) and the benchmark simulation model No. 2 (BSM2) have been made to extend BSM1 for evaluation of process monitoring methods and plant-wide control strategies, respectively. Influent-related disturbances for BSM1_LT/BSM2 are to be generated with a model, and this paper provides a general overview of the modelling methods used. Typical influent dynamic phenomena generated with the BSM1_LT/BSM2 influent disturbance model, including diurnal, weekend, seasonal and holiday effects, as well as rainfall, are illustrated with simulation results. As a result of the work described in this paper, a proposed influent model/file has been released to the benchmark developers for evaluation purposes. Pending this evaluation, a final BSM1_LT/BSM2 influent disturbance model definition is foreseen. Preliminary simulations with dynamic influent data generated by the influent disturbance model indicate that default BSM1 activated sludge plant control strategies will need extensions for BSM1_LT/BSM2 to efficiently handle 1 year of influent dynamics.     

Colloidal Synthesis of Hollow Cobalt Sulfide Nanocrystals

Formation of cobalt sulfide hollow nanocrystals through a mechanism similar to the Kirkendall Effect has been investigated in detail. It is found that performing the reaction at > 120 °C leads to fast formation of a single void inside each shell, whereas at room temperature multiple voids are formed within each shell, which can be attributed to strongly temperature‐dependent diffusivities for vacancies. The void formation process is dominated by outward diffusion of cobalt cations; still, the occurrence of significant inward transport of sulfur anions can be inferred as the final voids are smaller in diameter than the original cobalt nanocrystals. Comparison of volume distributions for initial and final nanostructures indicates excess apparent volume in shells, implying significant porosity and/or a defective structure. Indirect evidence for fracture of shells during growth at lower temperatures was observed in shell‐size statistics and transmission electron microscopy images of as‐grown shells. An idealized model of the diffusional process imposes two minimal requirements on material parameters for shell growth to be obtainable within a specific synthetic system.     

Improved homogenization of Ni in sintered steels through the use of Cr-containing prealloyed powders

The homogenization of Ni in powder metal (PM) steel compacts is usually difficult even after high-temperature sintering at 1250°C. An earlier study by the authors demonstrated that this problem can be alleviated through the addition of 0.5 wt pct Cr in the form of stainless steel powders. To further improve the microstructure and mechanical properties of Ni-containing PM steels and to understand the mechanisms, an attempt was made in this study using the Fe-3Cr-0.5Mo prealloyed powder as the base material. The results showed that the distribution of the Ni additives was significantly improved. As a result, the tensile strength of the Fe-3Cr-0.5Mo-4Ni-0.5C compact sintered at 1250°C reached 1323 MPa. The elongation was higher than 1 pct. These sinter-hardened properties, which were attained using a slow furnace cooling rate, were comparable to those of the sinter-hardened alloys reported in the literature using accelerated cooling and were equivalent to those of the best quenched-and-tempered alloys registered in the Metal Powder Industries Federation (MPIF) standards. These improvements were attributed to the positive effect of Cr addition on alloy homogenization due to the reduction of the repelling effect between Ni and C, as was demonstrated through the thermodynamic analysis using the Thermo-Calc program.     

Comprehensive heat exchange model for a semiconductor laser diode

By measuring the total energy flow from an optical device, we can develop new design strategies for thermal stabilization. Here we present a comprehensive model for heat exchange between a semiconductor laser diode and its environment that includes the mechanisms of conduction, convection, and radiation. We perform quantitative measurements of these processes for several devices, deriving parameters such as a laser's heat transfer coefficient, and then demonstrate the feasibility of thermal probing for the nondestructive wafer-scale characterization of optical devices.     

Experimental studies of the bond response of three-wire strands and some influencing parameters

The bond behavior of prestressing strands is of great importance for the capacity of precast prestressed concrete structures. In the present study, the bond behavior of three-wire strands, and some influencing parameters, were examined by means of steel encased pull-through and push-in tests. The three mechanisms: adhesion, friction and other mechanical actions were found to be present at the strand-concrete interface at different slip values. The results from the experiments showed that the micro roughness of the strand surface strongly affected the initial bond response of the strand, that is the adhesion in the interface. The maximum bond capacity of indented three-wire strands was found to be directly connected to the geometric properties of the strand indents. The influence of the concrete strength on the bond capacity of the strand was hard to interpret. However, the density of the concrete matrix was found to be a better parameter for determine the influence of the concrete rather than the compressive strength.     

Note on B-splines, wavelet scaling functions, and Gabor frames

Let g be a continuous, compactly supported function on such that the integer translates of g constitute a partition of unity. We show that the Gabor system (g,a,b), with window g and time-shift and frequency-shift parameters a,b>0 has no lower frame bound larger than 0 if b=2,3,... and a>0. In particular, (g,a,b) is not a Gabor frame if g is a continuous, compactly supported wavelet scaling function and if b=2,3,... and a>0. We give an example for our result for the case that g=B/sub 1/, the triangle function supported by [-1,1], by showing pictures of the canonical dual corresponding to (g,a,b) where ab=1/4 and b crosses the lines N=2,3,.     

Understanding silica-supported metal catalysts: Pd/silica as a case study

Supported metal catalysts, particularly noble metals supported on SiO₂, have attracted considerable attention due to the importance of the silica–metal interface in heterogeneous catalysis and in electronic device fabrication. Several important issues, e.g., the stability of the metal–oxide interface at working temperatures and pressures, are not well-understood. In this review, the present status of our understanding of the metal–silica interface is reviewed. Recent results of model studies in our laboratories on Pd/SiO₂/Mo(1 1 2) using LEED, AES and STM are reported. In this work, epitaxial, ultrathin, well-ordered SiO₂ films were grown on a Mo(1 1 2) substrate to circumvent complications that frequently arise from the silica–silicon interface present in silica thin films grown on silicon.     

Structure and electrical characteristics of Ce4+-doped Ba2In2O5

The In-site of Ba₂In₂O₅ with Brownmillerite structure was partially substituted for Ce⁴⁺ ions in order to examine the doping effect on the order-disorder transition. Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.1, 0.2, 0.3, 0.5, 1.0, and 1.5) were prepared by solid state reaction. X-Ray diffraction analyses of these powder samples demonstrated that Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.1 and 0.2) possesses Brownmillerite structure. With increasing content of Ce⁴⁺ ion the crystal system of Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.3, 0.5, and 1.0) changed to cubic perovskite structure above the order-disorder transition temperature of Ba₂In₂O₅. Arrhenius plots of the electrical conductivities of Ba₂In_{2 – x} Ce _x O_{5 + x/2} (x = 0.2, 0.3, and 1.0) exhibited no discontinuity. These compounds had high transference numbers of oxide ion above 973 k.