Effects of surfactant/silica and silica/cerium ratios on the characteristics of mesoporous Ce-MCM-41

Using the surfactant CTMABr (cetyltrimethyl ammonium bromide) and cerium(IV) sulfate, mesoporous Ce-MCM-41 molecular sieves were produced under a hydrothermal condition with various surfactant/silica (surfactant/Si) and silica/cerium (Si/Ce) ratios. Changes to the structural traits caused by changing the molar ratios of both surfactant/Si and Si/Ce were investigated. XRD (X-ray diffraction), FT-IR (fourier transform infrared spectroscopy), and SEM (scanning electro microscopy) were used for the characterization of prepared mesoporous samples. Among the tested molar ratios, surfactant/Si ratio of 0.5 and 0.2 showed highest values of d_1 0 0 and intensity, respectively, for the Si-MCM-41. XRD analysis also identified a quintessential hexagonal structure of Ce-MCM-41 for the Si/Ce molar ratio higher than 40 (maintaining the surfactant/Si ratio at 0.2). When cerium content was increased to have the Si/Ce molar ratio of 20, the hexagonal structure of Ce-MCM-41 was collapsed due to the structural stress of substituted cerium. FT-IR results confirmed calcination of Ce-MCM-41 and the incorporation of Ce⁴⁺ ions of cerium sulfate into the silica surface with proper removal of the surfactant. Rod-like shape with rounded edges of the prepared Ce-MCM-41 samples was identified by SEM. These results suggest surfactant/Si ratio of 0.2 and Si/Ce ratio of 40 for the production of Ce-MCM-41 with the highest level of crystallinity.     

提高开卷线纵剪机精度的研究

通过对纵剪机右立柱轴承间隙测量方法和左立柱导向结构的改进，保证了加工精度，易于操作，提高了生产效率。     

汽车漆漆膜质量的改进与提高

通过对车身漆膜质量问题的分析,采取专业清洁公司整体承包车间保洁、工艺方面改进、更换生产外材料、供应商加强对汽车漆使用的监控等一系列措施,漆膜质量水平得以提高.     

Collision-Free Interleaver Composed of a Latin Square for Parallel-Architecture Turbo Codes

In parallel-architecture turbo codes, the constituent interleavers must avoid memory collision. This paper proposes a collision-free interleaver structure composed of a Latin square (LS) and pre-designed interleavers. Our proposed interleavers can be easily optimized for various information block sizes and for various degrees of parallelism. Their performances were evaluated by computer simulation.     

烧结成品运输自动控制系统的改进

对烧结成品运输自控系统不稳定性因素进行了分析，提出了采取优化硬件外围工作环境，完善软件保护程序等改进措施。改进后的自控系统稳定性明显提高。     

Effects of Y and Ce on Microstructures and Properties of Nb-Si System Composites

The effects of yttrium and cerium on microstructures and properties of Nb-Si system composites were investigated by scanning electron microscopy( SEM), energy dispersive spectrum(EDS), X-ray diffraction(XRD) and high temperature oxidation experiments.It is found that the coarse primary silicide phase became finer and more homogeneous with Y and Ce addition.The results of high temperature oxidation experiments show that the oxidation rates of NbSi system composites with an appropriate amount of Y and Ce decrease compared with those of alloys without Y or Ce addition, and oxidation products mainly distribute along the phase boundaries between the Nb solid solution and silicide.     

Distributed Optical Fiber Sensor for Multi-point Temperature Measurement

The distributed optical fiber sensing technology is overviewed, which is based on Raman scattering light theory. Basic operation principle, structure, system characteristics and signal processing are discussed. This structure and method of the signal processing possess of certain spatial resolution, hence will ensure the practicability of system.     

Multi-antenna scheme for high capacity transmission in the digital audio broadcasting

In this paper, we apply multi-antenna scheme to DAB system for high-rate transmission. In the MIMO-DAB system with a number of transmitting and receiving antennas increases the transmission rate efficiently with low multiplication operations. For channel estimation in the MIMO-DAB system, we propose a new PRS structure and evaluate the channel estimation performance. The proposed PRS structure can estimate multi-channel information based on the semi-blind processing. The performance of proposed PRS is compared with that of conventional training sequence employing Tarokh's transmission matrix. And also we investigate the performance limitation due to the imperfect channel estimation in a MIMO-DAB receiver. It has been shown that the MIMO-DAB system with multi-antennas can achieve the high-rate transmission for multimedia broadcasting and the performance of MIMO-DAB system is impaired by imperfect channel information.     

A 0.25-/spl mu/m CMOS quad-band GSM RF transceiver using an efficient LO frequency plan

This paper describes a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS applications. It is the most important design issue to maximize resource sharing and reuse in designing the multiband transceivers. In particular, reducing the number of voltage-controlled oscillators (VCOs) required for local oscillator (LO) frequency generation is very important because the VCO and phase-locked loop (PLL) circuits occupy a relatively large area. We propose a quad-band GSM transceiver architecture that employs a direct conversion receiver and an offset PLL transmitter, which requires only one VCO/PLL to generate LO signals by using an efficient LO frequency plan. In the receive path, four separate LNAs are used for each band, and two down-conversion mixers are used, one for the low bands (850/900 MHz) and the other for the high bands (1800/1900 MHz). A receiver baseband circuit is shared for all four bands because all of their channel spaces are the same. In the transmit path, most of the building blocks of the offset PLL, including a TX VCO and IF filters, are integrated. The quad-band GSM transceiver that was implemented in 0.25-/spl mu/m CMOS technology has a size of 3.3/spl times/3.2 mm/sup 2/, including its pad area. From the experimental results, we found that the receiver provides a maximum noise figure of 2.9 dB and a minimum IIP3 of -13.2dBm for the EGSM 900 band. The transmitter shows an rms phase error of 1.4/spl deg/ and meets the GSM spectral mask specification. The prototype chip consumes 56 and 58 mA at 2.8 V in the RX and TX modes, respectively.