Electronic properties of magnetically doped nanotubes

Effect of doping of carbon nanotubes by magnetic transition metal atoms has been considered in this paper. In the case of semiconducting tubes, it was found that the system has zero magnetization, whereas in metallic tubes the valence electrons of the tube screen the magnetization of the dopants: the coupling to the tube is usually antiferromagnetic (except for Cr).     

Whispering-gallery-like modes in square resonators

The mode frequencies and field distributions of whispering-gallery (WG)-like modes of square resonators are obtained analytically, which agree very well with the numerical results calculated by the FDTD technique and Pade approximation method. In the analysis, a perfect electric wall for the transverse magnetic mode or perfect magnetic wall for the transverse electric mode is assumed at the diagonals of the square resonators, which not only provides the transverse mode confinement, but also requires the longitudinal mode number to be an even integer. The WG-like modes of square resonators are nondegenerate modes with high-quality factors, which make them suitable for fabricating single-mode low-threshold semiconductor microcavity lasers.     

不同注F剂量与CMOS运放电路辐照损伤的相关性

在不同注F剂量条件下,对P沟和N沟两种不同差分对输入CMOS运放电路的电离辐照响应进行了研究.分析比较了注F和未注F运放电路电离辐照响应之间的差异.结果表明,在栅场介质注入适量的F,可有效抑制辐照感生的氧化物电荷尤其是界面态的增长,从而提高CMOS运放电路的抗辐照特性.     

数值试井在白6-2井测试资料分析评价中的应用

数值试井是在近来发展的一项新的试井解释技术，具有处理非均质，复杂边界油气藏问题的优点，弥补了常规解析试井技术的不足。运用数值试井解释技术，结合动、静态资料，通过对白6-1断块白6-2井测试资料的综合分析评价，确定了储层渗流参数，落实了该气藏的边界情况，为该断块下一步开发提供可靠依据。     

魏氏组织对20#碳钢H2S应力腐蚀开裂性能的影响

文章对H₂S-CO₂-H₂O腐蚀环境下发生H₂S应力腐蚀的20^＃碳钢弯管（无缝钢管）进行了成分、组织、拉伸、硬度和应力腐蚀开裂等性能的试验研究，并与同材质、同时投产、腐蚀环境基本相似而未发生应力腐蚀开裂的在役弯管及未使用的新弯管作对比，结果表明魏氏组织是引起20^＃钢发生应力腐蚀开裂的主要原因；正火能消除魏氏组织，降低钢的应力腐蚀开裂敏感性。     

氨精制装置运行问题分析及改造措施

通过分析中国石油兰州石化分公司炼油厂氨精制装置存在的运行问题,提出了相应的改造措施,包括在分凝器脱液管线上新增隔离阀门、更换三级冷凝冷却器、更换氨压缩机及采用低温结晶脱硫工艺等。改造后装置运行结果表明:三级分凝器出口温度由70℃降至小于35℃,压缩机吸气量由5 m3/m in提高至74 m3/m in,原料酸性水中硫化氢质量分数下降45.5%,氨质量分数下降55.5%,净化水合格率达100%,氨精制塔塔顶温度下降5~20℃,液氨中氨质量分数由97.05%上升至99.60%,液氨产量达0.125 t/h,实现了装置的长周期运行。     

一类Feistel密码的线性分析

该文提出一种新的求取分组密码线性偏差上界的方法，特别适用于密钥线性作用的Feistel密码．该分析方法的思路是，首先对密码体制线性偏差进行严格的数学描述，分别给出密码线性偏差与轮函数F及S盒的线性偏差的数学关系；然后通过求取线性方程组最小重量解，确定密码线性偏差的上界．     

Structured low-density parity-check codes

This article describes the different methods to design regular low density parity-check (LDPC) codes with large girth. In graph terms, this corresponds to designing bipartite undirected regular graphs with large girth. Large girth speeds the convergence of iterative decoding and improves the performance at least in the high SNR range, by slowing down the onsetting of the error floor. We reviewed several existing constructions from exhaustive search to highly structured designs based on Euclidean and projective finite geometries and combinatorial designs. We describe GB and TS LDPC codes and compared the BER performance with large girth to the BER performance of random codes. These studies confirm that in the high SNR regime these codes with high girth exhibit better BER performance. The regularity of the codes provides additional advantages that we did not explore in this article like the simplicity of their hardware implementation and fast encoding.     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.