Application of Plasma-Doping (PLAD) Technique to Reduce Dark Current of CMOS Image Sensors

Plasma doping (PLAD) was applied to reduce the dark current of CMOS image sensor (CIS), for the first time. PLAD was employed around shallow trench isolation (STI) to screen the defective sidewalls and edges of STI from the depletion region of photodiode. This technique can provide not only shallow but also conformal doping around the STI, making it a suitable doping technique for pinning purposes for CISs with sub-2-mum pixel pitch. The measured results show that temporal noise and dark signal deviation as well as dark level decrease     

Bidirectional SCM Transmission Using a Noise-Suppressed Fabry–Pérot Laser Diode and a Reflective Semiconductor Optical Amplifier in a WDM/SCM-PON Link

We have proposed and experimentally demonstrated a bidirectional hybrid wavelength-division-multiplexed/subcarrier-multiplexed (SCM)-passive optical network based on a noise-suppressed Fabry-Peacuterot laser diode (FP-LD) and a reflective semiconductor optical amplifier (RSOA). For downlink data transmission, an FP-LD with multiple wavelength characteristics was used, and the mode partition noise of the FP-LD was reduced using a gain-saturated SOA with high-pass filter characteristics. For uplink data transmission, the downlink optical source was reused and remodulated by an SCM method, using an RSOA. A bidirectional SCM link with radio frequencies (RFs) of 2.4 GHz in the downlink and 1.0 GHz in the uplink was implemented. To confirm the validity of the proposed configuration, a 16-quadrature amplitude modulation transmission experiment was performed on a 10-km bidirectional optical access link. The transmission performance was investigated by means of the error vector magnitude and RF spectrum     

Strong Diffie-Hellman-DSA Key Exchange

To provide authentication to the Diffie-Hellman key exchange, a few integrated key exchange schemes which provide authentication using the DSA signature have been proposed in the literature. In this letter we point out that all of the previous Diffie-Hellman-DSA schemes do not provide security against session state reveal attacks. We also suggest a strong Diffie-Hellman-DSA scheme providing security against session state reveal attacks as well as forward secrecy and key independence     

Chiroptical‐Conjugated Polymer/Chiral Small Molecule Hybrid Thin Films for Circularly Polarized Light‐Detecting Heterojunction Devices

Herein, a simple and facile strategy is described to obtain chiroptically active semiconductor thin films by blending of poly(3‐alkylthiophene)s, which are conventional achiral polymer semiconductors, and 1,1′‐binaphthyl (BN), a versatile chiral molecule. As expected, the intermolecular interaction between the two materials is important to extend the chirality of the binaphthyl molecules to the hybrid films. The controlled phase separation and crystallization of poly[3‐(6‐carboxyhexyl)thiophene‐2,5‐diyl] (P3CT) and binaphthyl hybrid films result in unique heterojunction bilayer thin‐film structures that consisted of BN microcrystals at the top and a P3CT/BN mixed layer at the bottom. Such heterojunction bilayer films exhibit significantly amplified chiroptical response with weak broadened tails, which is due to the enhanced crystallization of the chiral BN molecules and formation of heteroaggregates in the hybrid films. Based on the characterization of crystalline structure and photoluminescence analysis, it is found that new electronic energy states are formed in the conduction band region of P3CTs in the P3CT/BN heteroaggregates, which contribute to chirality transfer from BN to the hybrid films. As a proof of concept, a photodiode capable of distinguishably sensing the left‐ and right‐handed circularly polarized light is successfully fabricated by using the hybrid films with the heterojunction bilayer structure.     

Power controlled H-ARQ in cdma2000 1/spl times/EV-DV

The newly applied H-ARQ technique in the reverse link of a cdma2000/spl reg/ 1/spl times/EV-DV system is shown to be similar in nature to the fast power control technique such that the two techniques both reduce interference to other users. In order to balance the H-ARQ gain and packet delay time, four modes of operation are defined: normal, reduction, boost, and boost reduction. The four modes are defined according to the way the channel gain is set for the H-ARQ operation. Simulation results show that the reduction modes have better performance in terms of both PER and packet delay time. It is also shown that the boost modes have lower PER and packet delay time than the non-boost modes, but at the expense of more energy.     

Soluble processed low-voltage and high efficiency blue phosphorescent organic light-emitting devices using small molecule host systems

We report low voltage driving and highly efficient blue phosphorescence organic light emitting diodes (PHOLEDs) fabricated by soluble process. A soluble small molecule mixed host system consisting of hole transporting 4,4’,4’’ tris(N-carbazolyl)triphenylamine (TCTA) and bipolar carrier transporting 2,6-bis(3-(carbazol-9-yl)phenyl)pyridine (26DCzPPy) exhibits high solubility with smooth surface properties. Moreover, this small molecule host shows the smoothest morphological property similar to a vacuum deposited amorphous film. A low driving voltage of 5.4 V at 1000 cd/m² and maximum external quantum efficiency 14.6% obtained in the solution processed blue PHOLEDs are useful for large area low cost manufacturing.     

Well‐Defined Functional Linear Aliphatic Diblock Copolyethers: A Versatile Linear Aliphatic Polyether Platform for Selective Functionalizations and Various Nanostructures

Low‐temperature anionic ring‐opening homopolymerizations and copolymerizations of two glycidol derivatives (allyl glycidyl ether (AGE) and ethoxyethyl glycidyl ether (EEGE)) are studied using a metal‐free catalyst system, 3‐phenyl‐1‐propanol (PPA) (an initiator) and 1‐tert‐butyl‐4,4,4‐tris(dimethylamino)‐2,2‐bis[tris‐(dimethylamino)phosphoranylidenamino]‐2Λ⁵,4Λ⁵‐catenadi(phosphazene) (t‐Bu‐P₄) (a promoter) in order to obtain well‐defined functional linear polyethers and diblock copolymers. With the aid of the catalyst system, AGE is found to successfully undergo anionic ring‐opening polymerization (ROP) even at room temperature (low reaction temperature) without any side reactions, producing well‐defined linear AGE‐homopolymer in a unimodal narrow molecular weight distribution. Under the same conditions, EEGE also undergoes polymerization, producing a linear EEGE‐homopolymer in a unimodal narrow molecular‐weight distribution. In this case, however, a side reaction (i.e., chain‐transfer reaction) is found to occur at low levels during the early stages of polymerization. The chemical properties of the monomers in the context of the homopolymerization reactions are considered in the design of a protocol used to synthesize well‐defined linear diblock copolyethers with a variety of compositions. The approach, anionic polymerization via the sequential step feed of AGE and EEGE as the first and second monomers, is found to be free from side reactions at room temperature. Each block of the obtained linear diblock copolymers undergoes selective deprotection to permit further chemical modification for selective functionalization. In addition, thermal properties and structures of the polymers and their post‐modification products are examined. Overall, this study demonstrates that a low‐temperature metal‐free anionic ROP using the PPA/t‐Bu‐P₄ catalyst system is suitable for the production of well‐defined linear AGE‐homopolymers and their diblock copolymers with the EEGE monomer, which are versatile and selectively functionalizable linear aliphatic polyether platforms for a variety of post‐modifications, nanostructures, and their applications.     

Chip warpage model for reliability prediction of delamination failures

A new experimental method to predict reliability for ACA type packages under temperature cycling is developed and proposed. The method introduces a new damage parameter that can be easily measured by experiment. It is proved that the linear elastic parameter, dw/dT which represents the rate of change of chip warpage with respect to temperature, efficiently reflects the common failure mechanism of ACA type packages, the interfacial delamination between the chip and the adhesive. It is demonstrated, both experimentally and numerically, that the size of delamination affects the warpage behavior of the chip. The dw/dT of the chip is monitored in real time using laser interferometers under thermal fatigue cycles up to 3000. The gradual decrease in warpage due to progressive increase in delamination is clearly emerged. As a result, a reliability curve that can predict the size of delamination and remained life is obtained. The new long-term reliability prediction method developed in this study can be applied to various advanced packages, e.g. underfilled flip–chip or TSV stacked chip packages, that embrace interfacial delamination as primary failure mode.     

Characteristics of solderable electrically conductive adhesives (ECAs) for electronic packaging

This study investigated the effect of the viscosity of the ECAs using a low-melting-point alloy (LMPA) filler on its bonding characteristics. The curing behaviors of the ECAs were determined using Differential Scanning Calorimetry (DSC), and ECA temperature-dependant viscosity characteristics were observed using a torsional parallel rheometer. The wetting test was conducted to investigate the reduction capability of ECAs and the flow-coalescence-wetting behavior of the LMPAs in ECAs. Electrical and mechanical properties were determined and compared to those with commercial ECAs and eutectic tin/lead (Sn/Pb) solder. In the metallurgically interconnected Quad Flat Package (QFP) joint, a typical scallop-type Cu–Sn intermetallic compound (IMC) layer formed at the upper SnBi/Cu interface after curing process. On the other hand, a (Cu, Ni)₆Sn₅ IMC layer formed on the SnBi/ENIG interface. In addition, the fracture surface exhibited by cleavage fracture mode and the fracture was propagated along the Cu–Sn IMC/SnBi interface. The extremely low-level viscosity of ECAs had a significant influence on the flow-coalescence-wetting behavior of the LMPAs in ECAs and also on the interconnection properties. Stable interconnected assemblies showed good electrical and mechanical properties.     

Three-phase unbalanced-voltage compensators

In this paper, three-phase unbalanced-voltage compensators using ac choppers are proposed. The proposed three-phase unbalanced-voltage compensators are made up of three single-phase ac choppers and transformers for unbalanced-voltage compensation and output voltage regulation. The proposed compensators use ac choppers which solve the commutation problem, limit the switch voltage stress to the maximum line voltage, and also raise efficiency using regenerative dc snubbers. Compared with previous unbalanced-voltage compensators that use complex voltage source inverters, the proposed unbalanced-voltage compensators use ac choppers and utilize source or output line voltages in 30° phase shift with the phase voltages as the input of the ac chopper. Then, the proposed compensators give high efficiency, fast dynamics, simple power circuit, and reduced control circuit. It is also shown via some simulation and experimental results that the presented unbalanced-voltage compensators give good dynamic and steady state performances.