A selective CVD tungsten-strapped polysilicon local interconnectiontechnology

A local interconnection technology utilizing polysilicon strapped with selective-chemical-vapor-deposited (CVD) tungsten has been developed. Both n- and p-channel MOS transistors have been successfully fabricated using this technology. Tungsten deposited on polysilicon is an attractive gate shunt and local interconnection material because of its low resistivity, immunity to dopant segregation and diffusion, and resistance to electromigration. A potential problem of this technology is the excessive diode leakage current associated with strapping shallow source/drain diodes with tungsten. The leakage is attributed to defects induced by the heavy source/drain implant, which can be effectively eliminated with a proper annealing procedure     

Benchmarks of simple, generic, shaped plates for validation oflow-frequency electromagnetic computational codes

The validation of low-frequency measurements and electromagnetic (EM) scattering computations for several simple, generic shapes, such as an equilateral-triangular plate, an equilateral-triangular plate with a concentric equilateral-triangular hole, and diamond- and hexagonal-shaped plates, is discussed. The plates were constructed from a thin aluminium sheet with a thickness of 0.08 cm. EM scattering by the planar plates was measured in the experimental test range (ETR) facility of NASA Langley Research Center. The dimensions of the plates were selected such that, over the frequency range of interest, the dimensions were in the range of λ₀ to 3λ₀. In addition, the triangular plate with a triangular hole was selected to study internal-hole resonances     

An analysis of multiple parallel coupled quasi-tem transmission lines

A theoretical analysis of general multiple parallel coupled transmission lines in an inhomogeneous medium is presented. The analysis is based on the generalized telegraphists' equation. It is relatively simple and has the advantage of giving explicit solutions for the properties of the coupled-line system. Considerations are also given to a coupled-line structure whose lines have the same characteristic impedance. Results for two and three coupled lines are found in agreement with those published previously.     

X gene and precore region mutations in the hepatitis B virus genome in persons positive for antibody to hepatitis B e antigen: comparison between asymptomatic "healthy" carriers and patients with severe chronic active hepatitis

Hepatitis B virus (HBV) carriers with antibody to hepatitis e antigen comprise asymptomatic carriers (ASCs), who have low replication levels of HBV, and patients with chronic active hepatitis (CAH), who have high levels of viral replication. To investigate whether defects in the X protein might be responsible for this difference in the level of viral replication, nucleotide sequences of X and precore gene regions in serum HBV were analyzed in 19 ASCs and 9 CAH patients. All patients had a point mutation creating a stop codon in the precore region. Seventeen ASCs (87.3%) had identical mutations consisting of 4 noncontiguous 1-bp deletions or an 8-bp deletion, both of which truncate the normal X protein, whereas no CAH patient had an X gene mutation (P < .001). Thus, deletion of the X protein might be responsible for the low levels of viral replication in ASCs.     

Development of Online Ultrasound Instructional Module and Comparison to Traditional Teaching Methods

A Web‐based teaching device was constructed to deliver information on fundamentals of ultrasound imaging to approximately one‐half the students in an undergraduate medical imaging course, while the remaining students were taught the same material via traditional lectures and typed notes. The students participating in this study were separated randomly but in such a manner that prior achievement was statistically equivalent for the two groups. After approximately two weeks of instruction, an ultrasound imaging exam was administered. Results indicated no statistically significant difference in scores on homework assigned during the instructional period between the traditional and online groups. Similarly, there was no statistically significant difference in the average exam scores of students in the two groups. The traditional group required significantly more time on learning activities than did the online group. These results indicated that level of understanding was not affected by use of the online device, while efficiency of learning improved dramatically. Reasons reported by the students for the improved efficiency of the online method included flexibility in time usage and ability to cater to the individual, which came with the added responsibility of self‐discipline. The traditional teaching method, meanwhile, allowed interaction with and instant feedback from a professor and other students. In this study we have demonstrated that the nature of an online device yields a higher level of efficiency than traditional lectures, despite the inherent drawbacks of the approach. The effectiveness of this device could potentially be improved by implementing enhancements to increase the level of interaction for the user and to help with discipline and time management.     

On the Direct Addition of Amine N–H to Ch≡C Triple Bonds with Late Transition Metal Catalysts

The kinetics of the transition metal-catalysed direct addition of amine NH bonds to carbon--carbon multiple bonds (hydroamination) has been explored by in situ spectroscopic techniques. From an open mass balance it was concluded that an intermediate species was formed during the cyclisation of 6-aminohex-1-yne. This species was identified as the enamine 2-methylene-piperidine, which is the primary hydroamination product.     

New compact wideband bandpass filter using three parallel-coupledlines

A new miniature bandpass filter, comprising three-conductor short-circuited spurline resonators of approximately a quarter-wavelength long, with a very wide bandwidth approaching multioctaves is reported for the first time. The chain matrix of the filter resonator is derived. The new filter has been developed using microstrip line with less than 1 dB insertion loss over a passband from 2 to 8 GHz. Reasonably good agreement between the measured and calculated results is observed     

A quadruple well, quadruple polysilicon BiCMOS process for fast 16Mb SRAM's

An advanced, high-performance, quadruple well, quadruple polysilicon BiCMOS technology has been developed for fast 16 Mb SRAM's. A split word-line bitcell architecture, using four levels of polysilicon and two self-aligned contacts, achieves a cell area of 8.61 μm² with conventional I-line lithography and 7.32 μm² with I-line plus phase-shift or with deep UV lithography. The process features PELOX isolation to provide a 1.0 μm active pitch, MOSFET transistors designed for a 0.80 μm gate poly pitch, a double polysilicon bipolar transistor with aggressively scaled parasitics, and a thin-film polysilicon transistor to enhance bitcell stability. A quadruple-well structure improves soft error rate (SER) and allows simultaneous optimization of MOSFET and bipolar performance     

Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's

Fully depleted SOI MOSFET's include an inherent parasitic lateral bipolar structure with a floating base. We present here the first complete physically based explanation of the bipolar gain mechanism, and its dependence on bias and technological parameters. A simple, one-dimensional physical model, with no fitting parameters, is constructed, and is shown to agree well with simulations and measurements performed on a new type of SOI MOSFET structure. It is shown that parameters which affect the gain, such as SOI layer thickness, body doping concentration and gate and drain voltages, do so primarily by affecting the concentration of holes in the body region. Thus, current gain falls dramatically with increasing drain voltage due to the associated impact ionization driven increase in the hole concentration. Gummel plots of this parasitic bipolar indicate an apparent ideality factor of 0.5 for the hole current, due to the body hole concentration's dependence on drain voltage