New efficient designs for XOR and XNOR functions on the transistorlevel

Two new methods are proposed to implement the exclusive-OR and exclusive-NOR functions on the transistor level. The first method uses non-complementary signal inputs and the least number of transistors. The other one improves the performance of the prior method but two more transistors are utilized. Both of them have been fully simulated by HSPICE on a SUN SPARC 2 workstation     

Error monitoring issues for common channel signaling

Motivated by field data which showed a large number of link changeovers and incidences of link oscillations between in-service and out-of-service states in common channel signalling (CCS) networks, a number of analyses of the link error monitoring procedures in the SS7 protocol were performed by the authors. This paper summarizes the results obtained thus far and include the following: (a) results of an exact analysis of the performance of the error monitoring procedures under both random and bursty errors; (b) a demonstration that there exists a range of error rates within which the error monitoring procedures of SS7 may induce frequent changeovers and changebacks; (c) an analysis of the performance of the SS7 level-2 transmission protocol to determine the tolerable error rates within which the delay requirements can be met; (d) a demonstration that the tolerable error rate depends strongly on various link and traffic characteristics, thereby implying that a single set of error monitor parameters will not work well in all situations; and (e) some recommendations on a customizable/adaptable scheme of error monitoring with a discussion on their implementability. These issues may be particularly relevant in the presence of anticipated increases in SS7 traffic due to widespread deployment of advanced intelligent network (AIN) and personal communications service (PCS) as well as for developing procedures for high-speed SS7 links currently under consideration by standards bodies     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

Preparation and optical properties of CdxHg1-xTe doped silica glass

In this paper, the Cd_xHg_1-xTe (x=1-0.7) doped silica glass was prepared through two step sol-gel process and in-situ growth technique from tetraethoxysilane (TEOS), cadmium acetate, mercury acetate and telluric acid. The influence of various factors on the glass was studied. The structure of the microcrystals was investigated by XRD. The absorption and transmittance spectrum of the composite showed that the shift of absorption edge was in conformity with the quantum size effect. The third-order nonlinear optical susceptibility χ⁽³⁾ was measured by the degenerate four wave mixing (DFWM). The values of χ⁽³⁾ was in the range of 10^-11-10^-12 MO esu at wavelength of 1.06 μm.     

MNLS inverse discriminates between neuronal activity on oppositewalls of a simulated sulcus of the brain

The minimum-norm least-squares (MNLS) inverse for magnetic field measurements is applied to a representation of a sulcus of the human brain, where one or both walls have regions of neuronal activity. Simulations indicate that the magnetic source image (MSI) is largely confined to the appropriate wall of the sulcus, even for a depth of 4 cm where the distance between walls is only 3 mm. Two nearly oppositely oriented dipoles located 3 mm apart are found to be distinguished. Influences on the quality of the MSI by measurement noise and inaccuracy in determining the image surface are discussed in detail     

High voltage (>1kV) and high current gain (32) 4H-SiC power BJTs using Al-free ohmic contact to the base

This letter reports the design and fabrication of 4H-SiC bipolar junction transistors with both high voltage (>1kV) and high dc current gain (/spl beta/=32) at a collector current level of I/sub c/=3.83A (J/sub c/=319 A/cm/sup 2/). An Al-free base ohmic contact has been used which, when compared with BJTs fabricated with Al-based base contact, shows clearly improved blocking voltage. A specific on-resistance of 17 m/spl Omega//spl middot/cm/sup 2/ has been achieved for collector current densities up to 289 A/cm/sup 2/.     

Hybrid switching and p-routing for optical burst switching networks

One promising switching technology for wavelength-division multiplexing optical networks is optical burst switching (OBS). However, there are major deficiencies of OBS. (1) The delay offset between a control message and its corresponding data burst is based on the diameter of a network. This affects network efficiency, quality-of-service, and network scalability.( 2) OBS adopts one-way resource reservation scheme, which causes frequent burst collision and, thus, burst loss. We address the above two important issues in OBS. In particular, we study how to improve the performance of delay and loss in OBS. To reduce the end-to-end delay, we propose a hybrid switching scheme. The hybrid switching is a combination of lightpath switching and OBS switching. A virtual topology design algorithm based on simulated annealing to minimize the longest shortest path through the virtual topology is presented. To minimize burst collision and loss, we propose a new routing algorithm, namely, p-routing, for OBS network. The p-routing is based on the wavelength available probability. A path that has higher available probability is less likely to drop bursts due to collision. The probability-based p-routing can reduce the volatility, randomness, and uncertainty of one-way resource reservation. Our studies show that hybrid switching and p-routing are complementary and both can dramatically improve the performance of OBS networks.