The incompatibility of knowledge regimes: consequences of the material world for cross-domain work

In this paper, we argue that successful integration of knowledge across work domains in the short-term can mask the generation of long-term consequences. We explore a setting, the introduction of environmental considerations into semiconductor manufacturing, where the eventual adoption of common measurement artifacts and associated practices enabled knowledge integration, but failed to address significant underlying consequences. Drawing from observational, interview, and archival data we develop an understanding of the work practices of the Tech and EnviroTech groups as structured by the material world and broader collective conventions. We introduce the concept of knowledge regime to outline the differences in knowledge across these work domains. More specifically, we find that differences in the causal specificity and developmental time horizon of knowledge and the measurement artifacts that result contribute to the relative power of one knowledge regime over another. Understanding these sources of incompatibility provides insight into the design requirements of information systems as boundary objects for knowledge integration, but also specifies the potential limits to any design effort.     

Adaptive weighted outer-product learning associative memory

Associative-memory neural networks with adaptive weighted outer-product learning are proposed in this paper. For the correct recall of a fundamental memory (FM), a corresponding learning weight is attached and a parameter called signal-to-noise-ratio-gain (SNRG) is devised. The sufficient conditions for the learning weights and the SNRG's are derived. It is found both empirically and theoretically that the SNRG's have their own threshold values for correct recalls of the corresponding FM's. Based on the gradient-descent approach, several algorithms are constructed to adaptively find the optimal learning weights with reference to global- or local-error measure.     

Electrical properties and positron annihilation study of (Ba<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ho<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>)TiO<Subscript>3</Subscript> ceramics

DC resistivity, dielectric constant, dielectric loss and positron annihilation spectra of (Ba_1−x Ho _x )TiO₃ ceramics have been measured as a function of holmium concentration x. It has been found that the DC resistivity of (Ba_1−x Ho _x )TiO₃ is strongly dependent on the Ho content: it decreases three orders of magnitude and reaches a minimum at x = 0.4%. Doping with 0.6% holmium increases the permittivity of BaTiO₃ by approximately three times (from ∼1,300 to ∼4,000), with only a slight increase in the corresponding dielectric loss. The local electron density and defect concentration estimated using positron annihilation technique conforms well to the features found in the dielectric and resistivity measurements. The results have been discussed in terms of a mixed compensation model.