多孔挡板流化床还原UO3反应器模型的研究

针对ＵＯ＿３的Ｎ＿２还原反应建立了多孔挡板流化床反应器模型。将多孔挡板床的每一级视为具有相似的流动状态，每一级的上、下段称为稀、密相段，分别用鼓泡床和活塞流模型描述。该模型的计算值与￠６３ｍｍ的多孔挡板床Ｈ＿２还原ＵＯ＿３的热态实验值能较好的吻合。还预计了还原温度、操作气速和挡板结构参数对固相转化率的影响，为该类反应器的工业设计、放大和优化提供了依据。     

铁磁偶合的Gd（Ⅲ）Cu（Ⅱ）配合物──组装分子基铁磁体的一种重要元件

铁磁偶合的Ｇｄ（Ⅲ）Ｃｕ（Ⅱ）配合物──组装分子基铁磁体的一种重要元件缪明明，廖代正，王耕霖（南开大学化学系天津３０００７１）摘要分子基磁体的设计是自然界向化学家挑战的一个热点课题。铁磁偶合的Ｇｄ（Ⅲ）Ｃｕ（Ⅱ）配合物是组装分子基磁体的一种重要元件。...     

Two bit correlation-an adaptive time delay estimation

Time delay estimation is a very important operation in ultrasound time-domain flow mapping and correction of phase aberration of an array transducer. As the interest increases in the application of one and a half-dimensional (1.5-D) and two-dimensional (2-D) array transducers to improving image quality and three-dimensional (3-D) imaging, the need of simple, fast, and sufficiently accurate algorithms for real-time time delay estimation becomes exceedingly crucial. In this paper, we present an adaptive time-delay estimation algorithm which minimizes the problem of noise sensitivity associated with the one bit correlation while retaining simplicity in implementation. This algorithm converts each sample datum into a two bit representation including the sign of the sample and an adaptively selected threshold. A bit pattern correlation operation is applied to find the time delay between two engaged signals. By using the criterion of misregistration as an indicator, we are able to show that the proposed algorithm is better than one bit correlation in susceptibility to noise level. Analytical results show that the improvement in reducing misregistration of the two bit correlation over its counterpart is consistent over a wide range of noise level. This is achieved by an adaptive adjustment of the threshold to accommodate signal corruption due to noise. The analytical results are corroborated by results from simulating the blood as a random distribution of red blood cells. Finally, we also present a memory-based architecture to implement the two bit correlation algorithm whose computation time does not depend upon the time delay of the signals to be correlated     

激光法合成SiC超细粉末物理化学过程的研究——Ⅰ.实验规律及粉末特性

用50W连续波CO_2激光器为热源,诱发SiH_4和C_2H_4反应,合成SiC超细粉末。实验确定了反应腔体内压力p、气源中的C/Si原子比、喷嘴内径2r以及激光功率密度与粉末特性之间的关系,并对合成的产物进行物理、化学表征。     

Pore size control of porous silica by sol-gel process

Porous silica glass was prepared by sol-gel process from tetraethoxysilane (TEOS). The effects of solvents (water, ethanol), drying condition, heat treatment temperature on specific surface area and pore size distribution of porous silica were investigated. Gelation process accelerates with an increase of H₂O content, while retards with the increase of ethanol amount. Structure changes during heat treatment were studied by means of DTA, XRD. TEM micrographs show that the gel particles shrink after heated at 500°C, thus the average pore size decreases.     

Fast convergent study on potential－harmonic method of directly solving Schrodinger equation in few－body systems

Ｆａｓｔｃｏｎｖｅｒｇｅｎｔｓｔｕｄｙｏｎｐｏｔｅｎｔｉａｌ－ｈａｒｍｏｎｉｃｍｅｔｈｏｄｏｆｄｉｒｅｃｔｌｙｓｏｌｖｉｎｇＳｃｈｒｏｄｉｎｇｅｒｅｑｕａｔｉｏｎｉｎｆｅｗ－ｂｏｄｙｓｙｓｔｅｍｓＷａｎｇＹｉ－Ｘｕａｎ（王沂轩）ａｎｄＤｅｎｓＣｏｎｇ...     

Differences in risk factors for being either a hepatitis B carrier or anti-hepatitis C+ in a hepatoma-hyperendemic area in rural Taiwan

This is a study of the differences in the risk factors for being either hepatitis B surface antigen positive [HBsAg(+)] or antibody to hepatitis C virus positive [Anti-HCV(+)] in A-Lein, a rural area in southern Taiwan, an area which also has a high hepatoma mortality rate. Three hundred eighty-five patients age > or =40 years participated in hepatoma screening at the A-Lein Community Health Center during 1995. Those who were HBsAg(-) and anti-HCV(-) or had coinfection of HBsAg(+) and anti-HCV(+) were excluded, leaving 293 patients: 109 HBsAg(+) and 184 anti-HCV(+). The anti-HCV(+) patients had a lower socioeconomic status (as defined by level of education and type of occupation) and were older than HBsAg(+) patients (P < 0.05). Those with higher alanine aminotransferase levels (ALT) also had a higher anti-HCV(+) to HBsAg(+) odds ratio (OR), and a dose response relationship was found, P < 0.0001. Anti-HCV(+) patients were more likely than HBsAg(+) patients to have a spouse who shared the infection, OR = 5.11; 95% CI, 2.30-11.28. Anti-HCV(+) patients were more likely than HBsAg(+) patients to have had blood transfusions (OR = 2.66; 95% CI, 1.20-5.89), frequent medical injections (OR = 2.64; 95% CI, 1.62-4.31), or injections by non-licensed medical providers (OR = 1.91; 95% CI, 1.18-3.09). Multiple logistic regression analysis showed that the significant factors for anti-HCV(+) patients vs. HBsAg(+) patients are drinking habit (OR = 3.45; 95% CI, 1.02-11.60), age (OR = 6.33; 95% CI, 2.93-13.68), and frequent medical injections (OR = 2.88; 95% CI, 1.65-5.03). The transmission of hepatitis C in A-Lein is closely related to low socioeconomic status, age, alcohol abuse, spouses being anti-HCV(+), and frequent medical injections, especially from non-licensed medical providers, including both pharmacists and those with no medical licensing whatsoever. These nonlicensed medical providers sometimes reuse needles to save money, which is a likely route of infection.     

小方坯连铸机的PLC自动控制

本文对弧型小方坯连铸机工艺与设备进行了分析，介绍了连铸生产的ＰＬＣ控制系统。及其软件设计。     

Transient hot-electron effect and its impact on circuit reliability

Transient hot-electron effect and its impact on circuit reliability are investigated. The rate of device decay is monitored as a function of the gate pulse transient period. Simulation results reveal that excess charges during a fast turn off time may cause an increase in the maximum substrate current. This, along with our experimental data, identifies that transient excess carrier may cause the enhancement of device degradation under certain stress conditions. The enhancement factor of the degradation is a function of the gate pulse transient time. Correlation between the analysis based upon AC/DC measurement and calculations based upon transient simulation are shown in the paper. Better agreement with experimental data is obtained by using the transient analysis and on chip test/stress structures. The correlation between AC and DC stress data is also shown based on the impact ionization model. A hot-electron design guideline is proposed based on the circuit reliability analysis. This guideline can help improve the circuit reliability without adversely effecting the circuit performance.