勘探创造力的增强需要体制创新

建立一个与市场经济相适应的,对创造性劳动受到尊重、支持、鼓励的创新体制,是实现创造力持续增长的关键。为此就要在干部制度、分配奖励制度和资金管理制度上深入改革,进行制度创新,为培养造就综合素质强的复合型人才,使创造性工作能获得持久的动力与激励提供条件和保证。     

与供应商的采购合作关系分析

对与供应商的采购合作关系进行了初步的分析，通过需求分析、选择供应商、正式建立合作关系、实施和加强合作关系4个过程展开，分别对筛选战略、供应管理计划流程、供应商的评估和选择、认证管理等关键问题进行初步分析，旨在使采购工作趋于完美。     

多臂井径成像测井技术

多臂井径成像测井技术同以往的40臂、X—Y井径等非成像工程测井相比具有较为明显的优势，不但可以做定量解释提供最大、最小、平均井径值，而且可以提供更为直观的18条或36务独立的测井曲线、磁井径，磁重量、井温、井壁立体图、井壁成像图、井壁截面图，为检测井下套管的完好性及修复提供了更为可靠直观的资料，满足了地质学家及时监测套管状况的要求，也为油井作业、大修提供全面、准确的套管全貌。文章介绍了18臂、36臂两种井径成像测井技术。并通过对测试资料实例的解释、分析、研究，总结了多臂井径成像测井技术的特点及应用效果。     

浅谈如何有效学习计算机软件知识

计算机软件知识的学习并不是完全线性的，而是不断循环往复、迭代的过程。本对如何深入、广泛、有效地学习计算机软件知识做出了一些探讨。     

Image registration by "Super-curves"

We solve the 2-D affine image registration problem by curve matching and alignment. Our approach starts with a super-curve, which is formed by superimposing two affine related curves in one coordinate system. We use B-spline fusion technique to find a single B-spline approximation of the super-curve and a registration between the two curves simultaneously. This approach achieves superior accuracy and efficiency in curve matching and alignment. We then address the occlusion problem by finding partial match between the curves segmented using inflections and cusps, which are affine invariant. The combination of edge detection and curve alignment lead to accurate image registration.     

基于AT89C2051的单户可视对讲门铃室内分机的设计

本文介绍一种基于单片机AT89C2501的单户可视对讲门铃室内分机的工作原理及软、硬件的设计与实现方法。     

Inhibition of intratracheal lung cancer development by systemic delivery of E1A

Amplification or overexpression of HER-2/neu in human lung cancer has been correlated with poor prognosis and chemoresistance. We have previously reported that the adenovirus type 5 early region 1A (E1A) gene product can suppress HER-2/neu-mediated transformation phenotypes through inhibition of HER-2/neu expression. To find an efficient way to treat HER-2/neu-overexpressing lung cancer with E1A, a replication-deficient adenovirus containing the E1A gene, Ad.E1A(+), was used to transduce E1A into HER-2/neu-overexpressing and low expressing human lung cancer cell lines. Tumour cell growth in vitro and colony formation in soft agarose were greatly inhibited by Ad.E1A(+) transduction in HER-2/neu-overexpressing lung cancer cell lines. In HER-2/neu low expressing cell lines, E1A could not inhibit cell growth in vitro but could reduce the colony formation ability in soft agarose, indicating different effects of E1A in these two types of cancer cells. To test the therapeutic efficacy of E1A to lung cancer by systemic delivery in vivo, tumor-bearing mice were established by intratracheal injection of lung cancer cells and treated by i.v. tail injections of Ad.E1A(+). As a result, Ad.E1A(+) suppressed HER-2/neu overexpression and inhibited intratracheal lung cancer growth. However, no significant tumor suppression effect of Ad.E1A(+) was observed in mice bearing HER-2/neu low expressing cell line when the same therapeutic procedure was followed. Thus, we conclude that systemic delivery of Ad.E1A(+) can efficiently achieve therapeutic effect in HER-2/neu-overexpressing lung cancer in vivo.     

The apolipoprotein E allele epsilon 4 is overrepresented in patients with the Lewy body variant of Alzheimer's disease

We determined apolipoprotein E (ApoE) genotypes in 122 autopsied demented patients. The frequency of the ApoE epsilon 4 allele was 39.6% in Alzheimer's disease (AD), 29.0% in the Lewy body variant of AD (LBV), and 6.25% in diffuse Lewy body disease. For AD and LBV patients, the epsilon 4 frequency was significantly higher than that reported in nondemented controls (10 to 15%). Therefore, LBV and AD share ApoE epsilon 4 as a genetic risk factor, providing further evidence that these conditions overlap.     

一起罕见的粗氩充装爆炸事故

对一起粗氩 充装设备发生爆炸事故进行了现场介绍、原因分析，找出了导致事故的主因，并提出了防范措施．     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.