行为级DSP算法描述的阵列处理器综合方法研究

本文提出了针对递归DSP算法的高层次系统综合流程,并以脉动(systolic)式处理器阵列结构实现.从DSP算法的FDDL行为级描述开始,经由编译及划分,产生数据相关流图(Data Dependency Graph),然后实现对算法流图的空间映射及时域规划,得到算法的信号流图(Signal Flow Graph),经时序重构,生成脉动阵列,最后实现对处理器单元的数据路径综合及控制器综合,并对处理器单元定位,本文同时提出了各设计阶段的算法策略及优化策略,并给出综合结果。     

The mixed-type integral equations for transient elastodynamic plane crack problems

In the present paper, by use of the boundary integral equation method and the techniques of Green fundamental solution and singularity analysis, the dynamic infinite plane crack problem is investigated. For the first time, the problem is reduced to solving a system of mixed-typed integral equations in Laplace transform domain. The equations consist of ordinary boundary integral equations along the outer boundary and Cauchy singular integral equations along the crack line. The equations obtained are strictly proved to be equivalent with the dual integral equations obtained by Sih in the special case of dynamic Griffith crack problem. The mixed-type integral equations can be solved by combining the numerical method of singular integral equation with the ordinary boundary element method. Further use the numerical method for Laplace transform, several typical examples are calculated and their dynamic stress intensity factors are obtained. The results show that the method proposed is successful and can be used to solve more complicated problems.     

High performance CMOS current comparator

A new high-speed CMOS current comparator is described. By changing the buffer of an existing comparator from class B to class AB operation, voltage swings are reduced, resulting in greater speed for small input currents. Simulation results employing a 1.6μm CMOS technology show the response time to a 0.1μA input current to be 11ns and the power dissipation to be 1.4mW, resulting in a five times improvement in speed/power ratio over existing high-speed current comparators     

金刚石薄膜中晶粒尺寸的研究

扫描电子显微研究表明，化学汽相沉积的金刚石薄膜中晶粒大小比较均匀。但随着沉积时间和薄膜厚度的增加，晶粒逐渐变大，且每一层内，存在少量的大金刚石颗粒，讨论了晶粒尺寸变化和大晶粒形成的原因和机制。     

Low-temperature growth of silicon-boron layer as solid diffusionsource for polysilicon contacted p+-n shallow junction

A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p⁺-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF₂⁺-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF₂⁺ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm² at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm², respectively. These results demonstrated that a uniform ultrashallow p⁺-n junction can be obtained by using a thin Si-B layer as a diffusion source     

1477 nm LD泵浦掺铒光纤放大器的研究

报道了采用１４７７ｎｍ激光二极管（ＬＤ）泵浦的掺铒光纤放大器的实验结果。研究了放大器的增益和时域特性。对１５２０ｎｍ的信号光，获得了２３ｄＢ的增益，泵浦效率为２．２８ｄＢ／ｍＷ。低频脉冲信号经过放大器后未发生波形畸变。     

精轧油膜轴承密封失效机理的初步分析

对油膜轴承密封出现的进水、漏油现象作了大量的调查、测量和统计分析，找出了产生质量事故的根本原因，提出了解决措施。     

钛对耐硫变换催化剂性能的影响

利用常压微反色谱、程序升温还原（ＴＰＲ）等技术研究了钛对耐硫变换催化剂性能的影响，结果表明：（１）钛能明显提高耐硫变换催化剂的活性，尤其是在低于６２３Ｋ时活性提高最为明显；（２）工业侧流试验后，含钛样品的保留活性及活性保留率均高于Ｋ８－１１；（３）催化剂中添加助剂ＴｉＯ２后，能显著提高对原料气中Ｈ２Ｓ含量变化的适应能力，因此可以拓宽对原料气的选择范围，对工业生产有着十分重要的现实意义。     

信钢炼钢厂转炉氧枪改造实践

对信钢炼钢厂25t转炉氧枪及喷头存在的缺陷进行分析,结合生产实践,提出了相应的改进措施,提高了冶炼速度,加快炼钢节奏,取得了良好的效果.     

Interfacial reaction between CO2-CO gas and molten iron oxide containing P2O5

The interfacial reaction between CO₂-CO gas and molten iron oxide containing P₂O₅ was investigated by the ¹³CO₂-CO isotope exchange technique at 1773 K with CO₂/CO=1.0. The apparent rate constant rapidly decreased with the addition of P₂O₅ up to 2.86 mol pct PO_2.5 and the Fe³⁺/Fe²⁺ ratio kept constant at approximately 0.2. By the classic site blockage model, in which the reaction only occurs on the vacant sites, and the modified site blockage model, in which the reaction occurs on the vacant sites and the sites occupied by phosphorus simultaneously, the effect of the addition of P₂O₅ was analyzed and the reaction mechanism of CO₂ dissociation was discussed. It may be concluded that the dissociation of the adsorbed CO₂ molecule is reasonable as a rate-determining step and that the effect of phosphorus on the interfacial reaction is caused by the decrease in the number of active sites with the increase of phosphorus content as a surface active element in molten iron oxide.