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161.
本文提出了针对递归DSP算法的高层次系统综合流程,并以脉动(systolic)式处理器阵列结构实现.从DSP算法的FDDL行为级描述开始,经由编译及划分,产生数据相关流图(Data Dependency Graph),然后实现对算法流图的空间映射及时域规划,得到算法的信号流图(Signal Flow Graph),经时序重构,生成脉动阵列,最后实现对处理器单元的数据路径综合及控制器综合,并对处理器单元定位,本文同时提出了各设计阶段的算法策略及优化策略,并给出综合结果。 相似文献
162.
In the present paper, by use of the boundary integral equation method and the techniques of Green fundamental solution and singularity analysis, the dynamic infinite plane crack problem is investigated. For the first time, the problem is reduced to solving a system of mixed-typed integral equations in Laplace transform domain. The equations consist of ordinary boundary integral equations along the outer boundary and Cauchy singular integral equations along the crack line. The equations obtained are strictly proved to be equivalent with the dual integral equations obtained by Sih in the special case of dynamic Griffith crack problem. The mixed-type integral equations can be solved by combining the numerical method of singular integral equation with the ordinary boundary element method. Further use the numerical method for Laplace transform, several typical examples are calculated and their dynamic stress intensity factors are obtained. The results show that the method proposed is successful and can be used to solve more complicated problems. 相似文献
163.
High performance CMOS current comparator 总被引:1,自引:0,他引:1
A new high-speed CMOS current comparator is described. By changing the buffer of an existing comparator from class B to class AB operation, voltage swings are reduced, resulting in greater speed for small input currents. Simulation results employing a 1.6μm CMOS technology show the response time to a 0.1μA input current to be 11ns and the power dissipation to be 1.4mW, resulting in a five times improvement in speed/power ratio over existing high-speed current comparators 相似文献
164.
扫描电子显微研究表明,化学汽相沉积的金刚石薄膜中晶粒大小比较均匀。但随着沉积时间和薄膜厚度的增加,晶粒逐渐变大,且每一层内,存在少量的大金刚石颗粒,讨论了晶粒尺寸变化和大晶粒形成的原因和机制。 相似文献
165.
Tan Fu Lei Tang Po Chen Horng-Chih Lin Chun-Yen Chang 《Electron Devices, IEEE Transactions on》1995,42(12):2104-2110
A new material, Si-B, is proposed as a solid diffusion source for fabrication of poly-Si contacted p+-n shallow junctions. The junction depth of the Si-B source diode has been measured and compared with that of a BF2+-implanted poly-Si source diode. It was found that the Si-B source diode had a much shallower junction and was less sensitive to thermal budget than the BF2+ source diode. This was attributed to the smaller surface concentration and diffusivity of boron in the silicon in Si-B source diodes. Regarding electrical characteristics of diodes with a junction depth over 500 Å, a forward ideality factor of better than 1.01 over 8 decades and a reverse-current density lower than 0.5 nA/cm2 at -5 V were obtained. As the junction depth shrank to 300 Å, the ideality factor and reverse current density of diodes increased slightly to 1.05 and 1.16 nA/cm2, respectively. These results demonstrated that a uniform ultrashallow p+-n junction can be obtained by using a thin Si-B layer as a diffusion source 相似文献
166.
167.
168.
钛对耐硫变换催化剂性能的影响 总被引:1,自引:0,他引:1
利用常压微反色谱、程序升温还原(TPR)等技术研究了钛对耐硫变换催化剂性能的影响,结果表明:(1)钛能明显提高耐硫变换催化剂的活性,尤其是在低于623K时活性提高最为明显;(2)工业侧流试验后,含钛样品的保留活性及活性保留率均高于K8-11;(3)催化剂中添加助剂TiO2后,能显著提高对原料气中H2S含量变化的适应能力,因此可以拓宽对原料气的选择范围,对工业生产有着十分重要的现实意义。 相似文献
169.
170.
Xiaojun Hu Hiroyuki Matsuura Fumitaka Tsukihashi 《Metallurgical and Materials Transactions B》2006,37(3):395-401
The interfacial reaction between CO2-CO gas and molten iron oxide containing P2O5 was investigated by the 13CO2-CO isotope exchange technique at 1773 K with CO2/CO=1.0. The apparent rate constant rapidly decreased with the addition of P2O5 up to 2.86 mol pct PO2.5 and the Fe3+/Fe2+ ratio kept constant at approximately 0.2. By the classic site blockage model, in which the reaction only occurs on the vacant
sites, and the modified site blockage model, in which the reaction occurs on the vacant sites and the sites occupied by phosphorus
simultaneously, the effect of the addition of P2O5 was analyzed and the reaction mechanism of CO2 dissociation was discussed. It may be concluded that the dissociation of the adsorbed CO2 molecule is reasonable as a rate-determining step and that the effect of phosphorus on the interfacial reaction is caused
by the decrease in the number of active sites with the increase of phosphorus content as a surface active element in molten
iron oxide. 相似文献