掺气槽上射流挟气量的数学模型

本文分析了掺气槽空腔区射流底缘气水界面上空气掺入水体过程的作用因素及受力情况，认为掺气是由于气水界面紊动涡体的脉动作用造成自由表面局部凹曲率超过临界值而发生的；建立了临界掺气流速和射流挟气量的理论表达式，它反映了影响射流掺气特性的各种因素及其相互关系，提出的射流挟气量公式得到部分原模型资料的验证，研究表明，射流挟气量受多种因素的影响，其中来流的紊动是影响掺气的重要因素，研究初步揭示出模型和原型通气     

盘县中小型病险水库除险加固投资成本与效益分析

贵州省盘县现有病险中小型水库30座,其中,中型水库1座,小（1）型水库5座,小（2）型水库24座。这些水库始建于20世纪50～70年代,设计总库容为2870.7万m3,配套灌溉干渠41条、长200km,支渠35条、长40.6km,     

西梁水库大坝防渗墙施工技术综述

介绍了西梁水库的基本情况,针对水库大坝防渗问题,提出了西梁水库高喷防渗参数的确定方法及施工中应注意的问题,阐述了高喷防渗效果的检验目的、内容和方法,并通过两种方法证明了西梁水库大坝高喷防渗参数是完全合理的。     

A Gradient Heterostructure Based on Tolerance Factor in High‐Performance Perovskite Solar Cells with 0.84 Fill Factor

A gradient heterosturcture is one of the basic methods to control the charge flow in perovskite solar cells (PSCs). However, a classical route for gradient heterosturctures is based on the diffusion technique, in which the guest ions gradually diffuse into the films from a concentrated source of dopants. The gradient heterosturcture is only accessible to the top side, and may be time consuming and costly. Here, the “intolerant” n‐type heteroatoms (Sb³⁺, In³⁺) with mismatched cation sizes and charge states can spontaneously enrich two sides of perovskite thin films. The dopants at specific sides can be extracted by a typical hole‐transport layer. Theoretical calculations and experimental observations both indicate that the optimized charge management can be attributed to the tailored band structure and interfacial electronic hybridization, which promote charge separation and collection. The strategy enables the fabrication of PSCs with a spontaneous graded heterojunction showing high efficiency. A champion device based on Sb³⁺ doped film shows a stabilized power‐conversion efficiency of 21.04% with a high fill factor of 0.84 and small hysteresis.     

Interface‐Driven Partial Dislocation Formation in 2D Heterostructures

Van der Waals (vdW) epitaxy allows the fabrication of various heterostructures with dramatically released lattice matching conditions. This study demonstrates interface‐driven stacking boundaries in WS₂ using epitaxially grown tungsten disulfide (WS₂) on wrinkled graphene. Graphene wrinkles function as highly reactive nucleation sites on WS₂ epilayers; however, they impede lateral growth and induce additional stress in the epilayer due to anisotropic friction. Moreover, partial dislocation‐driven in‐plane strain facilitates out‐of‐plane buckling with a height of 1 nm to release in‐plane strain. Remarkably, in‐plane strain relaxation at partial dislocations restores the bandgap to that of monolayer WS₂ due to reduced interlayer interaction. These findings clarify significant substrate morphology effects even in vdW epitaxy and are potentially useful for various applications involving modifying optical and electronic properties by manipulating extended 1D defects via substrate morphology control.