线性调频的脉冲压缩雷达视频信号仿真

利用数字方法实现线性调频的脉冲压缩雷达视频目标模拟信号具有诸多优点：信号模拟的精度高，灵活性好，幅度、相位补偿方便，可以模拟复杂情况，系统结构简单，可靠性高，可扩展性强。详细介绍了基于FPGA设计线性调频的脉冲压缩雷达视频目标模拟信号的原理、结构、具体实现以及简要的性能分析。结果表明该方案性能良好，具有现实可实现性。     

溶剂对环氧乙烷催化水合制乙二醇的影响

研究了NY催化剂催化环氧乙烷水合制乙二醇(EG)过程中,溶剂、催化剂添加量和水与环氧乙烷的摩尔比(简称水比)对EG选择性的影响。实验结果表明,以丙三醇作为溶剂使催化剂进行循环,能提高EG的选择性,效果好于以生成的EG作为溶剂循环催化剂。催化剂添加量、水比和溶剂添加量对EG选择性具有较大影响,其中溶剂添加量对EG选择性的影响最显著。在低水比(1.0~4.0)条件下,EG质量分数小于30%、催化剂质量分数大于7.2%时,EG选择性稳定在95.63%~97.92%,平均值为96.80%,此结果对于进一步降低EG合成工艺的能耗具有指导意义。     

硝基NPK复合肥的生产技术与市场前景

论述了硝基NPK复合肥生产的基本原理、生产特点、工艺设计、消耗定额以及市场与效益分析。     

Enhanced thermal stability of a sputtered titanium-nitride film as a diffusion barrier for capacitor-bottom electrodes

The effect of a thin RuO_x layer formed on the Ru/TiN/doped poly-Si/Si stack structure was compared with that on the RuO_x/TiN/doped poly-Si/Si stack structure over the post-deposition annealing temperature ranges of 450–600°C. The Ru/TiN/poly-Si/Si contact system exhibited linear behavior at forward bias with a small increase in the total resistance up to 600°C. The RuO_x/TiN/poly-Si/Si contact system exhibited nonlinear characteristics under forward bias at 450°C, which is attributed to no formation of a thin RuO_x layer at the RuO_x surface and porous-amorphous microstructure. In the former case, the addition of oxygen at the surface layer of the Ru film by pre-annealing leads to the formation of a thin RuO_x layer and chemically strong Ru-O bonds. This results from the retardation of oxygen diffusion caused by the discontinuity of diffusion paths. In particular, the RuO_x layer in a nonstoichiometric state is changed to the RuO₂-crystalline phase in a stoichiometric state after post-deposition annealing; this phase can act as an oxygen-capture layer. Therefore, it appears that the electrical properties of the Ru/TiN/poly-Si/Si contact system are better than those of the RuO_x/TiN/poly-Si/Si contact system.     

热作模具钢表面激光堆焊耐磨合金层的研究

本文主要通过在H13钢上用大功率CO_2激光束进行堆焊,阐述了激光堆焊工艺变化对堆焊组织和性能的影响,在本试验条件下,得到了高密度弥散金属化合物组织的激光堆焊层,平均硬度为HV800,与基体呈冶金结合,耐磨性比H13模具钢提高149%。     

GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

In this paper, we report the study of the electrical characteristics of GaN and AlGaN vertical p-i-n junctions and Schottky rectifiers grown on both sapphire and SiC substrates by metal-organic chemical-vapor deposition. For GaN p-i-n rectifiers grown on SiC with a relatively thin “i” region of 2 μm, a breakdown voltage over 400 V, and forward voltage as low as 4.5 V at 100 A/cm² are exhibited for a 60-μm-diameter device. A GaN Schottky diode with a 2-μm-thick undoped layer exhibits a blocking voltage in excess of ∼230 V at a reverse-leakage current density below 1 mA/cm², and a forward-voltage drop of 3.5 V at a current density of 100 A/cm². It has been found that with the same device structure and process approach, the leakage current of a device grown on a SiC substrate is much lower than a device grown on a sapphire substrate. The use of Mg ion implantation for p-guard rings as planar-edge terminations in mesageometry GaN Schottky rectifiers has also been studied.     

Evaluating the impact of CASE: an empirical comparison of retrospective and cross-sectional survey approaches

The purpose of this paper is to evaluate two methods of assessing the productivity and quality impact of Computer Aided Software Engineering (CASE) and Fourth Generation Language (4GL) technologies: (1) by the retrospective method; and (2) the cross-sectional method. Both methods involve the use of questionnaire surveys. Developers' perceptions depend on the context in which they are expressed and this includes expectations about the effectiveness of a given software product. Consequently, it is generally not reliable to base inferences about the relative merits of CASE and 4GLs on a cross-sectional comparison of two separate samples of users. The retrospective method that requires each respondent to directly compare different products is shown to be more reliable. However, there may be scope to employ cross-sectional comparisons of the findings from different samples where both sets of respondents use the same reference point for their judgements, and where numerical rather than verbal rating scales are used to measure perceptions.     

高氧化态（Ⅱ─Ⅳ）三核金属簇合物构型的人工神经网络判别方法

本文运用一典型的人工神经网络模型─“反向传播”模型，对高氧化态（Ⅱ─Ⅳ）三核金属簇合物的构型分布进行了分析，得到了较好的分类、预报结果为化合物结构分析提供了新的工具。     

Presupposition failure — A comedy of errors

Presuppositions of utterances are the pieces of information you convey with an utterance no matter whether your utterance is true or not. We first study presupposition in a very simple framework of updating propositional information, with examples of how presuppositions of complex propositional updates can be calculated. Next we move on to presuppositions and quantification, in the context of a dynamic version of predicate logic, suitably modified to allow for presupposition failure. In both the propositional and the quantificational case, presupposition failure can be viewed as error abortion of procedures. Thus, a dynamic assertion logic which describes the preconditions for error abortion is the suitable tool for analysing presupposition.