Correction factors for water-proofing sleeves in kilovoltage x-ray beams

This paper investigates the effect of the waterproofing sleeve on the calibration of kilovoltage photon beams (50-300 kV). The sleeve effect correction factor, ps has been calculated using the Monte Carlo method as the ratios of the air kerma in an air cavity of a cylindrical chamber without the waterproofing sleeve to that with a sleeve. Three sleeve materials have been studied, PMMA, nylon and polystyrene. The calculations were carried out using the EGS4 (Electron Gamma Shower version 4) code system with the application of a correlated-sampling variance-reduction technique. The results show that the sleeve correction factor for 1-mm thick nylon and polystyrene sleeves, ps varies from 0.992 to 1.000 and from 0.981 to 1.000, respectively, for the same beam quality range. The ps factor varies with sleeve thickness, beam quality and phantom depth. No significant dependence of the ps factor on field size and source-surface distance has been found. Measurements for PMMA, nylon and polystyrene sleeves of various thicknesses have also been carried out and show excellent agreement with Monte Carlo calculations.     

Multiresolution analysis in extraction of reference lines fromdocuments with gray level background

Based on wavelets, a theoretical method has been developed to process multi-gray level documents. In this method, two-dimensional multiresolution analysis, a wavelet decomposition algorithm, and compactly supported orthonormal wavelets are used to transform a document image into sub-images. According to these sub-images, the reference lines of a multi-gray level document can be extracted, and knowledge about the geometric structure of the document can be acquired. Particularly, this approach is more efficient to process form documents with gray level background. Experiments indicate that this new method can be applied to process documents with promising results     

降低彩板生产稀释剂消耗的方法探讨

结合彩涂板生产实际，介绍了几种降低稀释剂消耗的方法。     

整体成型钼园舟研究

本研究采用特殊的方法制取钼园舟，研究结果表明，获得了满意的结果。     

高质量的一级光栅1．55μmDFB激光器

本文详细叙述了ＤＦＢ激光器的设计要点和新的工艺。采用一级全息光栅和二步液相外延法批量研制出高稳定单纵模工作的１．５５μｍ分布反馈激光器（ＤＦＢ—ＬＤ）。外延片成品率＞４０％。器件特性：２５℃时阈值电流２０ｍＡ，单面光功率＞１０ｍｗ，主边模抑制比ＳＭＳＲ达４３ｄＢ（λ／４相移光栅），谱线宽度△ν－２０ｄＢ＝０．３ｎｍ，调制速率＞１．８ＧＨｚ。可靠性测试显示：高温监测光谱稳定，２５°Ｃ时阈值退化率△Ｉｔｈ／ｔ＜０．３ｍＡ／ｋｈ，对应器件预估寿命将超过１０万ｈ。     

Suppression of boron penetration in p+ polysilicon gateP-MOSFETs using low-temperature gate-oxide N2O anneal

It has been reported that high-temperature (~1100°C) N₂ O-annealed oxide can block boron penetration from poly-Si gates to the silicon substrate. However, this high-temperature step may be inappropriate for the low thermal budgets required of deep-submicron ULSI MOSFETs. Low-temperature (900~950°C) N₂O-annealed gate oxide is also a good barrier to boron penetration. For the first time, the change in channel doping profile due to compensation of arsenic and boron ionized impurities was resolved using MOS C-V measurement techniques. It was found that the higher the nitrogen concentration incorporated at Si/SiO₂ interface, the more effective is the suppression of boron penetration. The experimental results also suggest that, for 60~110 Å gate oxides, a certain amount of nitrogen (~2.2%) incorporated near the Si/SiO₂ interface is essential to effectively prevent boron diffusing into the underlying silicon substrate     

钨钼活化烧结机理

主要介绍了添加少量Ｎｉ－Ｃｏ时钨，钼的低温烧结特性，对比了纯钨，Ｗ－Ｃｏ，Ｗ－Ｎｉ，Ｗ－Ｎｉ－Ｃｏ，纯钼，Ｍｏ－Ｃｏ，Ｍｏ－Ｎｉ，Ｍｏ－Ｎｉ－Ｃｏ烧结体系，测算了这些体系的烧结活化能，研究了其低温烧结机理，发现Ｎｉ－Ｃｏ对钨，钼的烧结具有最好的活化效果，说明镍与钴的共同加入对钨，钼的烧结具有协同活化作用。     

分流液压转向牵引计算的展开图及其应用

本文论及分流液压转向牵引计算的概念,方法及其展开图,并且提供了计算机绘制的展开图和应用实例。     

核医学成像技术中计算机的应用

由于计算机和核医学的结合,各种成像方法的计算机化医学图像层析技术正在迅速发展,并开始广泛应用。本文介绍各类成像技术中计算机的应用,特别评述其最近进展,并提出了今后的展望。