Element doping into the Cu
2ZnSn(S,Se)
4 (CZTSSe) absorber is an effective method to optimize the performance of thin film solar cells. In this study, the Cu
2In
xZn
1-xSn(S,Se)
4 (CIZTSSe) precursor film was deposited by magnetron cosputtering technique using indium (In) and quaternary Cu
2ZnSnS
4 (CZTS) as targets. Meanwhile, the In content was controlled using the direct current (DC) power on In target (P
In). A single kesterite CIZTSSe alloy was formed by successfully doping a small number of In
3+ into the main lattice of CZTSSe. The partial Zn
2+ cations were substituted by In
3+ ions, resulting in improving properties of CZTSSe films. Morphological analysis showed that large grain CIZTSSe films could be obtained by doping In. The well-distributed, smooth, and dense film was obtained when the P
In was 30 W. The band gap of CIZTSSe could be continuously adjusted from 1.27 to 1.05 eV as P
In increased from 0 to 40 W. In addition, the CIZTSSe alloy thin film at P
In = 30 W exhibited the best p-type conductivity with Hall mobility of 6.87 cm
2V
?1s
?1, which is a potential material as the absorption layer of high-performance solar cells.
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