百色水库和龙滩水库淹没土地补偿概算单价比较

通过对百色水利枢纽和龙滩水电站土地补偿概算单价进行比较分析,找出控制土地补偿的关键因素,对 制定广西实施《大中型水利水电工程征地补偿和移民安置条例》办法和编制两工程调整概算,提供参考。     

高层建筑屋面悬挑曲梁结构施工技术

本文通过工程实例,说明采用型钢和钢管组合支撑体系,解决高层建筑屋面悬挑曲梁结构的支模难题,保证工程质量和施工安全,并探讨施工中型钢的节点连接做法。     

Rheology of concentrated solutions of hyperbranched polyesters

The solution rheology of different generations of hyperbranched polyesters in N‐methyl‐2‐pyrrolidinone (NMP) solvent was examined in this study. The solutions exhibited Newtonian behavior over a wide range of polyester concentrations. Also, the relative viscosities of poly(amidoamine) (PAMAM) dendrimers in ethylenediamine were compared with those of the hyperbranched polyesters in NMP. Both types of dendritic polymers have relative viscosities that are exponential functions of their molar fraction in solution. The slopes of these relative viscosity curves show a linear relationship with respect to the generation number. PAMAM dendrimers have the greater slopes for each generation, reflecting their relatively larger intrinsic viscosity values.     

熔融 NaCl-(Na,K)_2SO_4引起的 Fe-Cr 合金的热腐蚀

本文采用电化学方法研究了 Fe-Cr 合金在800℃、熔融 NaCl-(Na,K)_2SO_4中的腐蚀行为,并对腐蚀产物进行了观察和分析。结果表明,提高合金 Cr 含量可以改善合金耐蚀性能。氧化-硫化是Fe5Cr、Fe10Cr 合金腐蚀破坏的主要方式;氧化膜的熔融反应是 Fe20Cr、Fe25Cr 合金加速腐蚀的主要原因。同时,氧化膜的机械破裂也加速了合金的腐蚀。     

Satellite broadcasting of time and frequency signals

The authors discuss the advantages of broadcasting time from a satellite over the more traditional ground based methods such as short wave and low frequency standard time and frequency broadcasts. The authors describe several one way satellite time services currently operational and discuss, in particular, a broadcast service using the Indian domestic satellite INSAT. The signal format, transmitting and receiving setups, and the methods for satellite position prediction are described in detail for the INSAT broadcast. Some typical results of time and frequency calibration are also discussed     

高温稀土永磁Sm2(Co,Cu,Fe,Zr)17 的制备和性能

制备了高温稀土永磁材料Sm(Coba1Fe0．26Cu0．05Zr0．026)7．0，研究了磁性能与工艺条件的关系．结果表明：提高烧结温度可使材料的Br和(BH)max增大，但是使Hci降低；适当提高真空预烧温度，可使材料在较低烧结温度下致密化，具有较高的Hci和(BH)max和温度稳定性．真空预烧温度过高使性能的急剧降低，其主要原因是Sm的析出．在最佳工艺条件下材料的磁性能参数分别为：Br1．08T3Hci2286kA／m，Hcb932kA／m，(BH)max220．8kJ／m^3；β20-200℃为-0．19％／℃．     

mc-Si:H/c-Si solar cell prepared by PECVD

Hetero-junction solar cells with an mc-Si:H window layer were achieved. The open voltage is increased while short current is decreased with increasing the mc-Si:H layer's thickness of emitter layer. The highest of V oc of 597 mV has obtained. When fixed the thickness of 30 nm, changing the N type from amorphous silicon layer to micro-crystalline layer, the efficiency of the hetero-junction solar cells is increased. Although the hydrogen etching before deposition enables the c-Si substrates to become rough by AFM images, it enhances the formation of epitaxial-like micro-crystalline silicon and better parameters of solar cell can be obtained by implying this process. The best result of efficiency is 13.86% with the V oc of 549.8 mV, J sc of 32.19 mA·cm-2 and the cell's area of 1cm2.     

A double-layer current conduction model for high-κ gate dielectric materials with interfacial oxide or silicate layer

The current-voltage (I-V) characteristics of metal-oxide-semiconductor (MOS) structures with hafnium oxide as the gate dielectric film were studied. Sharp shifts from a low-voltage ohmic regime to a tunneling conduction were observed in the high-voltage range. The paper demonstrates that this behavior can be described very well with a double-layer dielectric model. Excellent fittings of the experimental curves were obtained and the related key structural and physical parameters were obtained. The model fitting further suggests the optimal annealing conditions for preparing the hafnium oxide films.     

P-channel Ge/Si Hetero-nanocrystal Based MOSFET Memory

The charge storage characteristics of P-channel Ge/Si hetero-nanocrystal based MOSFET memory has been investigated and a logical array has been constructed using this memory cell. In the case of the thickness of tunneling oxide T_ox=2nm and the dimensions of Si- and Ge-nanocrystal D_Si=D_Ge=5nm, the retention time of this device can reach ten years(~1×10~8s) while the programming and erasing time achieve the orders of microsecond and millisecond at the control gate voltage |V_g|=3V with respect to N-wells, respectively. Therefore, this novel device, as an excellent nonvolatile memory operating at room temperature, is desired to obtain application in future VLSI.