Interfacial segregation of Ti in the brazing of diamond grits onto a steel substrate using a Cu-Sn-Ti brazing alloy

Diamond grits were brazed onto a steel substrate using a prealloyed Cu-10Sn-15Ti (wt pct) brazing alloy at 925 °C and 1050 °C. Due to the relatively high concentration of Ti in the brazing alloy, the braze matrix exhibited a composite structure, composed of β-(Cu,Sn), a Cu-based solid solution, and various intermetallic compounds with different morphologies. The reaction of Ti with diamond yielded a continuous TiC layer on the surfaces of the diamond grits. On top of the TiC growth front, an intermetallic compound, composed of Sn and Ti, nucleated and grew into a randomly interwoven fine lacey structure. An interfacial structure developed as the interwoven fine lacey phase was semicoherently bonded to the TiC layer, with the Cu-based braze matrix filling its interstices. The thickness of such a composite layer was increased linearly with the square root of isothermal holding time at 925 °C, complying with the law of a diffusion-controlled process. However, at 1050 °C, the segregation behavior of Ti and Sn to the interfaces between the TiC layer and the braze matrix diminished, due to the increased solubility of Ti in the Cu-based liquid phase. The enhanced dissolution of Ti in the Cu-based liquid phase at 1050 °C also caused the precipitation of rod-like CuTi with an average diameter of about 0.2 μm during cooling. SnTi₃ was the predominant intermetallic compound and existed in three different forms in the braze matrix. It existed as interconnected grains of large size which either floated to the surface of the braze matrix or grew into faceted grains. It also exhibited a nail-like structure with a mean diameter of about 1 μm for the rod section and a lamellar structure arising from a eutectic reaction during cooling.     

碳/碳复合材料CVI工艺中热解碳形成机理的研究

对碳碳复合材料CVI或（CVD）工艺中热碳组织的类型，沉积机理等研究情况进行了简要的综述，并对其进一步研究提出了相应观点。     

BaFe12O19/SiO2-B2O3微晶玻璃陶瓷的制备和微波性能

采用柠檬酸sol-gel工艺合成了BaFe12O19/SiO2-B2O3微晶玻璃陶瓷，研究了SiO2-B2O3玻璃的含量，Ba/Fe原子比和热处理温度对体系析出晶相的影响，以及介电常数和磁异率在1MHz-6GHz频率范围的变化规律，结果表明，休系中SiO2-B2O3玻璃的含量和Ba/Fe比越高，BaF312O19相的析出越困难，前驱体合适的热处理温度为1000℃，介电常数和磁导率基本上随测试频率的增而加下降；介电损耗的最大值为0．43，磁损耗较小。     

A random switching method for HPWM full-bridge inverter

To overcome the problem of unequal switching loss in power switches, in conventional hybrid pulse width modulation (HPWM) full-bridge inverters, a random switching method for HPWM full-bridge inverters is proposed. The proposed method equalizes switching losses of the four switches, while also providing good output performance     

Adaptive cell division for ray tracing

In ray tracing the two most commonly used data structures are the octree and uniform cell division. The octree structure allows efficient adaptive subdivision of space, while taking care of the spatial coherence of the objects in it; however, the tree structure locating the next node in the path of a ray is complex and time consuming. The cell structure, on the other hand, can be stored in a three-dimensional array, and each cell can be efficiently accessed by specifying three indices. However, such a uniform cell division does not take care of object coherence. The proposed data structure combines the positive features of the above data structures while minimising their disadvantages. The entire object space is implicitly assumed to be a three-dimensional grid of cells. Initially, the entire object space is a single voxel which later undergoes “adaptive cell division.” But, unlike in the octree structure, where each voxel is divided exactly at the middle of each dimension, in adaptive cell division, each voxel is divided at the nearest cell boundary. The result is that each voxel contains an integral number of cells along each axis. Corresponding to the implicit cell division we maintain a three-dimensional array, with each array element containing the voxel number which is used to index into the voxel array. The voxel array is used to store information about the structure of each voxel, in particular, the objects in each voxel. While a ray moves from one voxel to another we always keep track of the cell through which the ray is currently passing. Since only arrays are involved in accessing the next voxel in the path of the ray, the operation is very efficient.     

Interpolating Quintic Polynomial with C~1 Continuity

A method constructinq C~1 Piecewise quintic polynomial over a triangular grid to interpo-late function values and partial derivatives at vertices is presented in this paper.The set of precise poly-nomials of this method is discussed.     

Finite-element grid improvement by minimization of stiffness matrix trace

A new and simple method of finite-element grid improvement is presented. The objective is to improve the accuracy of the analysis. The procedure is based on a minimization of the trace of the stiffness matrix. For a broad class of problems this minimization is seen to be equivalent to minimizing the potential energy. The method is illustrated with the classical tapered bar problem examined earlier by Prager and Masur. Identical results are obtained.     

新型高k栅介质材料研究进展

随着半导体技术的不断发展，MOSFET（metal-oxide-semiconductor field effect transistor）的特征尺寸不断缩小，栅介质等效氧化物厚度已小至nm数量级。这时电子的直接隧穿效应将非常显著，将严重影响器件的稳定性和可靠性。因此需要寻找新型高k介质材料，能够在保持和增大栅极电容的同时，使介质层仍保持足够的物理厚度来限制隧穿效应的影响。本文综述了研究高k栅介质材料的意义；MOS栅介质的要求；主要新型高k栅介质材料的最新研究动态；展望了高k介质材料今后发展的主要趋势和需要解决的问题。     

真空冻干生产线模糊控制系统

介绍了采用模糊控制技术解决真空冻干生产线控制中大超调量、大滞后等问题的方法 ,详述了模糊控制系统的构成、主要功能和实现方法