Stress distribution on [100] Si wafer mapped by novel I-V analysis of MOS tunneling diodes

The current-voltage (I-V) characteristics of metal-oxide-semiconductor tunneling diodes distributed over a 3-in Si wafer were analyzed to investigate the stress distribution on the wafer. Generally, the substrate injection saturation current (J/sub sat/) decreases as the gate injection leakage current (J/sub g/) increases, the latter being dominated by oxide thickness via a trap related mechanism. A universal curve to fit all analyzed data was found and it is suggested that devices with extremely high (low) J/sub sat/ at a given J/sub g/ should be located in areas of the silicon lattice with relatively high external compressive (tensile) stress because of the stress-induced bandgap variation effect. The mapped locations of the highly stressed devices on a 3-in [100] Si wafer correspond to the patterns of slips caused by thermal stress during rapid thermal processing, as described in previous reports.     

螺旋翅片管的换热计算

本文引入区域平均表面传热系数的概念。在实验研究的基础上进行了肋基和肋端温度分布预测及肋片换热数值计算。     

烷基烷氧基硅烷的合成方法及其在涂料中的应用

介绍了烷基烷氧基硅烷的合成方法(包括烷基的引入方法和烷氧基的形成方法)、近几年来在涂料中的应用及其结构与性能的关系。     

轻水堆发展规划的核燃料循环模型及优化

一、前言提高核燃料循环的经济性是增进核动力经济性极为重要的一环。国外有人提出利用动态线性规划方法,依据燃料循环中各环节内在的物理和化工过程,建立起一系列线性方     

烃类在三甘醇和四甘醇中无限稀释活度系数的测定与关联

用气相色谱法分别测定了苯、甲苯、乙苯、正庚烷、正辛烷、正壬烷和正癸烷在三甘醇和四甘醇中的无限稀释活度系数 ,测定温度范围为 5 0～ 13 0℃。用修正的UNIFAC模型 (Dortmund)对上述不同温度下的无限稀释活度系数实验数据进行关联 ,得到了三甘醇和四甘醇与其它基团的相互作用参数 ,并将计算结果与实测值进行了比较。     

智能温湿度测控仪

本文提出一种利用MCS-51系列单片机实现温湿度自动检测和控制的智能仪表,文中对仪器的工作原理、硬件组成和软件设计作了较为详细的介绍。     

Synthesis of ultrafine LiCoO2 powders by the sol-gel method

Ultrafine high-temperature (HT) LiCoO₂ powders were synthesized by the sol-gel method using polyacrylic acid (PAA) as a chelating agent. The decomposition process of the gel precursor was examined to determine the crystallization temperature and the dependence of the physicochemical properties of HT-LiCoO₂ powders on the PAA quantity was extensively investigated. Polycrystalline HT-LiCoO₂ powders, composed of very uniformly sized ultrafine particulates with an average particle size of 30–50 nm and a specific surface area of 2.3–17 m²g^–1, could be obtained at the lower calcination temperature of 550 °C and the shorter calcination time of 1 h compared to the solid-state reaction.     

CAD OF MILLIMETER WAVE OSCILLATORS WITH THE FDHB TECHNIQUE

In this paper the modelling, analysis and optimization of millimeter wave oscillatorsare investigated by using the a frequency-domain harmonic balance technique (FDHB), where theexternal-circuit impedances looking outside from the active device are calculated with a combinedtechnique of modes expansion, Galerkin, and collocation methods. The optimization results arein agreement with the experimental ones, which show the reliability of the presented model andoptimization.     

Silicon carbide-toughened zirconia ceramics

Tetragonal zirconia polycrystalline (TZP) ceramics containing SiC reinforcement in the form of fine particles (nano-scale), particles (micro-scale), whiskers and platelets were synthesized by hot-pressing. The effects of morphology and grain size of SiC reinforcement on the strength and fracture toughness at room temperature were investigated. The addition of SiC (in whatever form) caused decreases in strength and toughness at room temperature with the exception of whisker-reinforced materials. Toughness fell off with increasing temperature, but nevertheless retained about one-half of the room-temperature value for that particular SiC reinforcement. However, the whisker- and particle-reinforced materials had higher K _lc values at high temperature than fine particle- or platelet-reinforced materials, with values in excess of 7 MPa m^1/2 at 1000 °C. The microstructure was examined for SiC whisker-reinforced/TZP materials by TEM and HREM, to examine the nature of the whisker/zirconia interface.