A mini review on two-dimensional nanomaterial assembly

Two-dimensional (2D) nanomaterials have attracted a great deal of attention since the discovery of graphene in 2004, due to their intriguing physicochemical properties and wide-ranging applications in catalysis, energy-related devices, electronics and optoelectronics. To maximize the potential of 2D nanomaterials for their technological applications, controlled assembly of 2D nanobulding blocks into integrated systems is critically needed. This mini review summarizes the reported strategies of 2D materials-based assembly into integrated functional nanostructures, from in-situ assembly method to post-synthesis assembly. The applications of 2D assembled integrated structures are also covered, especially in the areas of energy, electronics and sensing, and we conclude with discussion on the remaining challenges and potential directions in this emerging field.

     

Eight-node conforming straight-side quadrilateral element with high-order completeness (QH8-C1)

A new eight-node conforming quadrilateral element with high-order completeness, denoted as QH8-C1, is proposed in this article. First, expressions for the interpolation displacement function satisfying the requirements for high-order completeness in the global coordinate system are constructed. Second, the displacement function expression in global coordinates is transformed into isoparametric coordinates, and the relationships between the two series of coefficients for the two kinds of displacement function expressions are found. Third, the displacement function expression is modified to satisfy the requirements of nodal freedom and interelement boundary continuity. The key to the new element construction is the derivation of the linear relationship expressions among 12 coefficients of element displacement interpolation polynomials in the global and isoparametric coordinate systems. As a result, the relationship between quadratic completeness and interelement continuity is explicitly given, and a proof of the completeness and the continuity was conducted to theoretically guarantee the validity of the derivation results. Furthermore, in order to verify the correctness of the theoretical work, nine numerical examples were performed. The computation results from these examples demonstrate that QH8-C1 exhibited excellent performance, including high simulation accuracy, fast convergence, insensitivity to mesh distortion, and monotonic convergence.     

Revealing Electrical-Poling-Induced Polarization Potential in Hybrid Perovskite Photodetectors

Despite recent rapid advances in metal halide perovskites for use in optoelectronics, the fundamental understanding of the electrical-poling-induced ion migration, accounting for many unusual attributes and thus performance in perovskite-based devices, remain comparatively elusive. Herein, the electrical-poling-promoted polarization potential is reported for rendering hybrid organic–inorganic perovskite photodetectors with high photocurrent and fast response time, displaying a tenfold enhancement in the photocurrent and a twofold decrease in the response time after an external electric field poling. First, a robust meniscus-assisted solution-printing strategy is employed to facilitate the oriented perovskite crystals over a large area. Subsequently, the electrical poling invokes the ion migration within perovskite crystals, thus inducing a polarization potential, as substantiated by the surface potential change assessed by Kelvin probe force microscopy. Such electrical-poling-induced polarization potential is responsible for the markedly enhanced photocurrent and largely shortened response time. This work presents new insights into the electrical-poling-triggered ion migration and, in turn, polarization potential as well as into the implication of the latter for optoelectronic devices with greater performance. As such, the utilization of ion-migration-produced polarization potential may represent an important endeavor toward a wide range of high-performance perovskite-based photodetectors, solar cells, transistors, scintillators, etc.     

基于物联网的智慧林业可持续发展策略研究

随着我国科技的不断进步,在“互联网+”大数据的背景下,林业的智慧化发展是必经之路。虽然我国智慧林业的发展已经取得了一定的突破,但是仍然存在着许多问题。基于此,文章在物联网技术的基础上,对智慧林业的可持续发展策略进行探讨。     

iRGD-reinforced,photo-transformable nanoclusters toward cooperative enhancement of intratumoral penetration and antitumor efficacy

Nano Research - Insufficient intratumoral penetration greatly hurdles the anticancer performance of nanomedicine. To realize highly efficient tumor penetration in a precisely and spatiotemporally...     

SDN中基于KMOBPSO的高可靠性控制器部署算法

针对SDN中控制器系统的单节点故障问题,兼顾系统成本和系统时延,应用N+1冗余备份模型来提高SDN控制器部署的可靠性,并将其抽象为多目标优化问题.同时,提出了一种融合K-means聚类算法和遗传算子的多目标二进制粒子群算法——KMOBPSO算法,以求解SDN控制器高可靠性部署问题的解.仿真结果表明,所提算法具有求解精度高、分布均匀、沿Pareto前沿面覆盖广的特点,能够显著提高SDN中控制器部署的可靠性.     

应变纤锌矿ZnO/MgxZn1-xO量子点中离子施主束缚激子的光学性质

Within the framework of the effective-mass approximation and the dipole approximation, considering the three-dimensional confinement of the electron and hole and the strong built-in electric field(BEF) in strained wurtzite Zn O/Mg0:25Zn0:75O quantum dots(QDs), the optical properties of ionized donor-bound excitons(D+, X)are investigated theoretically using a variational method. The computations are performed in the case of finite band offset. Numerical results indicate that the optical properties of(D+, X) complexes sensitively depend on the donor position, the QD size and the BEF. The binding energy of(D+, X) complexes is larger when the donor is located in the vicinity of the left interface of the QDs, and it decreases with increasing QD size. The oscillator strength reduces with an increase in the dot height and increases with an increase in the dot radius. Furthermore, when the QD size decreases, the absorption peak intensity shows a marked increment, and the absorption coefficient peak has a blueshift. The strong BEF causes a redshift of the absorption coefficient peak and causes the absorption peak intensity to decrease remarkably. The physical reasons for these relationships have been analyzed in depth.