Microstructures of high-J c melt-textured YBa2Cu3O7−x /Ag superconductors

Silver has been previously added to the melt-textured YBa₂Cu₃O_7?x in order to increase the critical current density (J _c ) of these materials. However, the effect of this addition on theJ _c is presently unclear. The purpose of this study is to investigate the effect of silver on both critical current density and the microstructure of the melt-textured YBa₂Cu₃O_7?x superconductors by means of X-ray diffraction, optical polarized microscopy, and transmission electron microscopy (TEM). TheJ _c of the MTG YBCO/Ag samples is more than 10⁴A/cm² under the 5 kOe magnetic field. It has been shown that as the concentration of silver increases, the fraction of the 211 phase dispersed within the 123 matrix decreases. Therefore, theJ _c slightly decreases. These results, together with the effect of the 211 phase, dislocations, and other structure defects on flux pinning, are described in this paper.     

岩心PI值试验研究及应用

主要论述了在多功能采油化学用剂评价仪上进行的岩心ＰＩ值试验的步骤，现象及结论。重点考察了岩心ＰＩ值与渗透率、流量及注入截面面积的关系；平行管岩心复合ＰＩ值和其中单管岩心ＰＩ值的关系。     

各种状态的液体通过核孔膜的规律

介绍了液体通过核孔膜规律方面取得的新认识，包括：（１）纯净液体通过核孔膜的规律；（２）核孔膜测定液体粘滞系数的各种方法；（３）各种物质溶液浓度的核孔膜测定；（４）液相混合物快速分离和化学分离；（５）流体中固体微粒对核孔膜的堵塞及其公式；（６）用核孔膜滤除液中各各斩规律。     

Fe－Cu包埋团簇的制备及其微观结构的研究

基于溅射－气体－聚集（ＳＧＡ）形成团簇的原理，提出了蒸发－气体－聚集（ＥＧＡ）共沉积方法，并在方华膜载网上成功地制备了Ｆｅ－Ｃｕ纳米磁性包理团簇样品。ＴＥＭ／ＥＤ分析表明，样品中Ｆｅ团簇被Ｃｕ原子所包裹，形成了以Ｆｅ团簇为芯，Ｃｕ膜为壳的良好的芯－壳式包埋结构。当衬底温度由２５℃变化到２００℃时，样品形貌由弥散状过渡到集团状，直至形成大的块状；其结构也相应的由Ｆｅ－Ｃｕ多晶共存变化为一种不规则的单晶形态。     

关于深冲薄钢板中的夹杂和成形性的商榷

对深冲薄钢板大生产的全工艺过程进行了跟踪，研究了ＷＹ０８ＡｌＡ薄钢板中Ａｌ＿２Ｏ＿３的形成，形态以及它们对冷轧成品的深冲性能和冲压小件的冲压成形废品率的影响。     

旋波媒质基本参数的一种测试方法

本文提出了直接利用旋波材料板的Ｓ参数获得其基本参数的方法。通过自由空间测量旋波材料板的反射场和透射场，可以反演得到媒质的复介电常数、复磁导率、旋波量以及透射场的轴比和旋转角，测试程序简单，结果精度高。     

The effects of plasma etching induced gate oxide degradation onMOSFET's 1/f noise

The effects of the plasma etching process induced gate oxide damages on device's low frequency noise behavior are investigated on MOSFET's fabricated with different field plate perimeter to gate area ratio antennas. Abnormal 1/f noise spectrum with a shoulder centered in the frequency range of 100 and to 1 kHz was frequently observed in small geometry devices, and it is attributable to a nonuniform distribution of oxide traps induced by plasma etching process